T1235H-8G-TR

T1235H-8G Datasheet 12 A - 800 V - 150 °C 8H Triac in D2PAK Features A2 G A1 A2 A1 • • • 12 A medium current Triac 800 V symmetrical blocking voltage 150 °C maximum junction temperature Tj • • • • • Three triggering quadrants High noise immunity - static dV/dt Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Molding resin UL94-V0 flammability certified Applications A2 • • • • • • G D²PAK General purpose AC line load control AC induction and universal motor control Lighting and automation I/O control Water heater, room heater and coffee machine Home automation smart AC plug Inrush current limiter in AC DC rectifiers Description Product status link T1235H-8G Product summary IT(RMS) 12 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA Tj max. 150 °C Specifically designed to operate at 800 V and 150 °C, the T1235H-8G Triac housed in D2PAK provides an enhanced thermal management: this 12 A Triac is the right choice for a compact drive of AC loads and enables the heatsink size reduction. D2PAK package is ideal for compact SMD designs on surface mount boards or insulated metal substrate boards. Based on the ST high temperature Snubberless technology, it offers higher specified turn off commutation and noise immunity levels up to the Tj max. The T1235H-8G safely optimizes the control of the hardest universal motors, heaters and inductive loads for industrial control and home appliances. Snubberless is a trademark of STMicroelectronics. DS13429 - Rev 2 - December 2020 For further information contact your local STMicroelectronics sales office. www.st.com T1235H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) ITSM I2t dl/dt Parameter 12 Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) t = 16.7 ms 126 t = 20 ms 120 I2t value for fusing tp = 10 ms 95 A2s Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz Tj = 25 °C 100 A/µs 800 V 900 V 4 A 5 W 1 W Storage temperature range -40 to +150 °C Operating junction temperature range -40 to +150 °C VDSM/VRSM Non Repetitive peak off-state voltage IGM Peak gate current PGM Maximum gate power dissipation Tj A Tc = 135 °C Repetitive peak off-state voltage Tstg Unit RMS on-state current (full sine wave) VDRM/VRRM PG(AV) Value tp = 10 ms, Tj = 25 °C tp = 20 µs, Tj = 150 °C Tj = 150 °C Average gate power dissipation A Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit Min. 5 mA Max. 35 mA IGT VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ I - II - III Min. 0.15 V I - III Max. 50 mA II Max. 80 mA Max. 35 mA IL IH (1) dV/dt (1) (dl/dt)c (1) IG = 1.2 x IGT Tj = 150 °C IT = 500 mA, gate open VD = VR = 536 V, gate open Tj = 150 °C Min. 2000 V/µs Without snubber network Tj = 150 °C Min. 12 A/ms 1. For both polarities of A2 referenced to A1. DS13429 - Rev 2 page 2/12 T1235H-8G Characteristics Table 3. Static characteristics Symbol VTM (1) VTO (1) (1) RD IDRM/IRRM Tj Test conditions Value Unit ITM = 17 A, tp = 380 µs 25 °C Max. 1.50 V Threshold voltage 150 °C Max. 0.80 V Dynamic resistance 150 °C Max. 32 mΩ 2.0 µA 4.5 mA 1.7 mA Value Unit Max. 1.1 °C/W Typ. 45 °C/W 25 °C VD = VR = VDRM = VRRM 150°C VD = VR = 400 V, peak voltage 150 °C Max. Max. 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistance Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient (SCU (1) =2 cm2) 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB. DS13429 - Rev 2 page 3/12 T1235H-8G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) Figure 2. On-state RMS current versus case temperature (full cycle) P(W) 14 IT(RMS)(A) 14 12 12 α = 180° α = 180° 10 10 8 8 6 6 4 4 180° 2 2 Tc(°C) IT(RMS)(A) 0 0 4 2 4 6 0 8 10 12 0 25 50 75 100 125 150 Figure 3. On-state RMS current versus ambient temperature (free air convection) Figure 4. On-state characteristics (maximum values) IT(RMS)(A) 1000 ITM(A) Tj max. Vto = 0.8 V Rd = 32 mΩ 3.5 α = 180° 3 100 2.5 2 Tj = 150 °C 1.5 10 Tj = 25 °C 1 0.5 Ta(°C) 0 0 25 50 75 100 125 0 150 Figure 5. Relative variation of thermal impedance versus pulse duration 1.0E+00 VTM(V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Figure 6. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages K = [Zth/Rth] Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 70 Zth(j-c) 60 1.0E-01 VD = V R = 200 V VD = V R = 400 V VD = V R = 600 V 50 Zth(j-a) 40 VD = V R = 800 V 30 1.0E-02 20 10 tp(s) 1.0E-03 1.0E-03 DS13429 - Rev 2 Ta (°C) 0 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 20 40 60 80 100 120 140 page 4/12 T1235H-8G Characteristics (curves) Figure 7. Thermal resistance junction to ambient versus copper surface under tab Figure 8. Relative variation of leakage current versus junction temperature for different values of blocking voltage Rth(j-a) (°C/W) 80 Epoxy printed circuit board FR4, eCu = 35 µm 1.0E+00 D²PAK IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V] 70 1.0E-01 60 VD = VR = 800 V 50 1.0E-02 40 VD = VR = 600 V 30 1.0E-03 20 SCu (cm²) 10 1.0E-04 0 0 5 10 15 20 25 30 35 40 Tj(°C) 1.0E-05 25 Figure 9. Relative variation of gate trigger voltage and current versus junction temperature (typical values) 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] 2.5 2 IH,IL [Tj] / IH,IL [Tj = 25 °C] IGT Q3 2 1.6 1.5 IGT Q1-Q2 1.2 VGT 1 IL 0.8 0.5 0.4 0 -50 IH Tj (°C) -25 0 25 50 75 100 125 150 Tj (°C) 0 -50 Figure 11. Surge peak on-state current versus number of cycles -25 0 25 50 75 100 125 150 Figure 12. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms ITSM(A) ITSM(A) 10000 150 Tj initial = 25 °C t =20ms Non repetitive Tj initial = 25 °C 100 One cycle 1000 dl/dt limitation: 100 A/µs I TSM 100 50 Repetitive Tc = 135°C Number of cycles 0 1 DS13429 - Rev 2 10 100 1000 10 0.01 t (ms) p 0.10 1.00 10.00 page 5/12 T1235H-8G Characteristics (curves) Figure 13. Relative variation of static dV/dt immunity versus junction temperature 4 dV/dt [Tj] / dV/dt [Tj = 150 °C] Figure 14. Relative variation of critical rate of decrease of main current versus junction temperature 14 VD = VR = 536 V 3 (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 12 10 8 2 6 4 1 2 Tj(°C) 0 25 DS13429 - Rev 2 Tj(°C) 0 50 75 100 125 150 25 50 75 100 125 150 page 6/12 T1235H-8G Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 D²PAK package information • • • ECOPACK2 compliant Lead-free package leads finishing Molding compound resin is halogen-free and meets UL94 flammability standard level V0 Figure 15. D²PAK package outline A E E1 E2 H D D1 L2 c2 2 3 D2 L3 1 b2 b e Max resin gate protrusion: 0.5 mm (1) G A1 A2 A3 L R Gauge Plane V2 c (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. DS13429 - Rev 2 page 7/12 T1235H-8G D²PAK package information Table 5. D²PAK package mechanical data Dimensions Inches(1) Millimeters Ref. Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.25 0.0098 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.19 1.40 0.0468 0.0551 L3 1.40 1.75 0.0551 0.0689 R V2(2) 0.10000 0.40 0° 0.0157 8° 0° 8° 1. Dimensions in inches are given for reference only 2. Degrees DS13429 - Rev 2 page 8/12 T1235H-8G D²PAK package information Figure 16. D²PAK recommended footprint (dimensions are in mm) 16.90 10.30 5.08 1.30 8.90 3.70 Figure 17. D²PAK stencil definitions (dimensions are in mm) DS13429 - Rev 2 page 9/12 T1235H-8G Ordering information 3 Ordering information Figure 18. Ordering information scheme T 12 35 H - 8 G - TR Series T = Triac RMS current 12 = 12 A Gate triggering current 35 = 35 mA High temperature H = High noise immunity and robust commutations Voltage 8 = 800 V Package G = D²PAK Packing TR = Tape and reel Blank = Tube Table 6. Ordering information Order code T1235H-8G-TR T1235H-8G DS13429 - Rev 2 Marking Package Weight T1235H-8G D2PAK 1.6 g Base qty. Delivery mode 1000 Tape and reel 13” 50 Tube page 10/12 T1235H-8G Revision history Table 7. Document revision history DS13429 - Rev 2 Date Version Changes 20-Nov-2020 1 Initial release. 16-Dec-2020 2 Updated general description. Inserted STPOWER logo. page 11/12 T1235H-8G IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13429 - Rev 2 page 12/12