T1235H-8T
Datasheet
12 A - 800 V - 150 °C 8H Triac in TO-220AB
Features
A2
G
A1
A2
•
•
•
12 A medium current Triac
800 V symmetrical blocking voltage
150 °C maximum junction temperature Tj
•
•
•
•
•
Three triggering quadrants
High noise immunity - static dV/dt
Robust dynamic turn-off commutation - (dl/dt)c
ECOPACK2 compliant component
Molding resin UL94-V0 flammability certified
Applications
G
A2
A1
TO-220AB
•
•
•
•
•
•
General purpose AC line load control
AC induction and universal motor control
Lighting and automation I/O control
Water heater, room heater and coffee machine
Home automation smart AC plug
Inrush current limiter in AC DC rectifiers
Description
Product status link
T1235H-8T
Product summary
IT(RMS)
12 A
VDRM/VRRM
800 V
VDSM/VRSM
900 V
IGT
35 mA
Tj max.
150 °C
Specifically designed to operate at 800 V and 150 °C, the T1235H-8T Triac housed
in TO-220AB provides an enhanced thermal management: this 12 A Triac is the
right choice for a compact drive of heavy AC loads and enables the heatsink size
reduction.
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the Tj max.
The T1235H-8T safely optimizes the control of the hardest universal motors, heaters
and inductive loads for industrial control and home appliances.
Snubberless is a trademark of STMicroelectronics.
DS13575 - Rev 2 - December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
T1235H-8T
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
IT(RMS)
Parameter
Value
Unit
A
RMS on-state current (full sine wave)
Tc = 135 °C
12
Non repetitive surge peak on-state current (full cycle,
Tj initial = 25 °C)
t = 16.7 ms
126
t = 20 ms
120
I2t value for fusing
tp = 10 ms
95
A2s
Critical rate of rise of on-state current, IG = 2 x IGT, tr
≤ 100 ns, f = 100 Hz
Tj = 25 °C
100
A/µs
800
V
900
V
4
A
5
W
1
W
Storage temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
ITSM
I2t
dl/dt
VDRM/VRRM
Repetitive peak off-state voltage
VDSM/VRSM
Non Repetitive peak off-state voltage
IGM
Peak gate current
PGM
Maximum gate power dissipation
PG(AV)
Tstg
tp = 10 ms, Tj = 25 °C
tp = 20 µs, Tj = 150 °C
Tj = 150 °C
Average gate power dissipation
A
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants
Value
Unit
Min.
5
mA
Max.
35
mA
IGT
VD = 12 V, RL = 30 Ω
I - II - III
VGT
VD = 12 V, RL = 30 Ω
I - II - III
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ
I - II - III
Min.
0.15
V
I - III
Max.
50
mA
II
Max.
80
mA
Max.
35
mA
IL
IH
(1)
dV/dt (1)
(dl/dt)c (1)
IG = 1.2 x IGT
Tj = 150 °C
IT = 500 mA, gate open
VD = VR = 536 V, gate open
Tj = 150 °C
Min.
2000
V/µs
Without snubber network
Tj = 150 °C
Min.
12
A/ms
1. For both polarities of A2 referenced to A1.
DS13575 - Rev 2
page 2/11
T1235H-8T
Characteristics
Table 3. Static characteristics
Symbol
VTM
(1)
VTO (1)
(1)
RD
IDRM/IRRM
Tj
Test conditions
Value
Unit
ITM = 17 A, tp = 380 µs
25 °C
Max.
1.50
V
Threshold voltage
150 °C
Max.
0.80
V
Dynamic resistance
150 °C
Max.
32
mΩ
2.0
µA
4.5
mA
1.7
mA
Value
Unit
25 °C
VD = VR = VDRM = VRRM
150°C
VD = VR = 400 V, peak voltage
150 °C
Max.
Max.
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance
Symbol
DS13575 - Rev 2
Parameter
Rth(j-c)
Junction to case (AC)
Max.
1.1
°C/W
Rth(j-a)
Junction to ambient
Typ.
60
°C/W
page 3/11
T1235H-8T
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
Figure 2. On-state RMS current versus case temperature
(full cycle)
P(W)
14
IT(RMS)(A)
14
12
12
α = 180°
α = 180°
10
10
8
8
6
6
4
4
180°
2
2
Tc(°C)
IT(RMS)(A)
0
0
2
4
6
0
8
10
12
0
25
50
75
100
125
150
Figure 3. On-state RMS current versus ambient
temperature (free air convection)
Figure 4. On-state characteristics (maximum values)
IT(RMS)(A)
1000
ITM(A)
3.5
3
Tj max.
Vto = 0.8 V
Rd = 32 mΩ
α = 180°
2.5
100
2
Tj = 150 °C
1.5
10
Tj = 25 °C
1
0.5
Ta(°C)
0
25
50
75
VTM(V)
1
0
100
125
0
150
Figure 5. Relative variation of thermal impedance versus
pulse duration
1
1.5
2
2.5
3
3.5
4
4.5
5
Figure 6. Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
K = [Zth/Rth]
1.0E+00
0.5
70
Rth(c-a) (°C/W)
(for heatsink sizing to avoid thermal runaway)
Junction-to -ambiant thermal resistance:
Typical 60 °C/W (without heatsink)
Zth(j-c)
60
VD = VR
= 400 V
VD = VR
= 600 V
50
1.0E-01
VD = VR
= 800 V
Zth(j-a)
40
30
1.0E-02
20
1.0E-03
DS13575 - Rev 2
10
tp(s)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
With 15°C/W heatsink
Ta (°C)
1.0E+01
1.0E+02
1.0E+03
0
20
40
60
80
100
120
140
page 4/11
T1235H-8T
Characteristics (curves)
Figure 7. Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
Figure 8. Relative variation of holding current and
latching current versus junction temperature (typical
values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]
2.5
2
IH,IL [Tj] / IH,IL [Tj = 25 °C]
IGT Q3
2
1.6
1.5
IGT Q1-Q2
1.2
VGT
1
IL
0.8
0.5
0.4
0
-50
IH
Tj (°C)
-25
0
25
50
75
100
125
Tj (°C)
0
150
-50
Figure 9. Surge peak on-state current versus number of
cycles
-25
0
25
50
75
100
125
150
Figure 10. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
ITSM(A)
ITSM(A)
10000
150
Tj initial = 25 °C
t =20ms
Non repetitive
Tj initial = 25 °C
100
One cycle
1000
dl/dt limitation: 100 A/µs
I
TSM
100
50
Repetitive
Tc = 135°C
Number of cycles
0
1
10
100
1000
Figure 11. Relative variation of static dV/dt immunity
versus junction temperature
4
dV/dt [Tj] / dV/dt [Tj = 150 °C]
VD = VR = 536 V
0.10
1.00
10.00
Figure 12. Relative variation of critical rate of decrease of
main current versus junction temperature
14
3
t (ms)
p
10
0.01
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
12
10
8
2
6
4
1
2
Tj(°C)
0
25
DS13575 - Rev 2
Tj(°C)
0
50
75
100
125
150
25
50
75
100
125
150
page 5/11
T1235H-8T
Characteristics (curves)
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage
1.0E+00
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V]
1.0E-01
VD = VR = 800 V
1.0E-02
VD = VR = 600 V
1.0E-03
1.0E-04
Tj(°C)
1.0E-05
25
DS13575 - Rev 2
50
75
100
125
150
page 6/11
T1235H-8T
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
TO-220AB package information
•
•
•
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14. TO-220AB package outline
DS13575 - Rev 2
page 7/11
T1235H-8T
TO-220AB package information
Table 5. TO-220AB package mechanical data
Dimensions
Min.
A
Inches(1)
Millimeters
Ref.
Typ.
15.20
a1
Max.
Min.
15.90
0.5984
3.75
Typ.
Max.
0.6260
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
0.0520
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
0.0669
I4
15.80
16.80
0.6220
M
16.40
2.6
0.6457
0.6614
0.1024
1. Inch dimensions are for reference only.
DS13575 - Rev 2
page 8/11
T1235H-8T
Ordering information
3
Ordering information
Figure 15. Ordering information scheme
T
12 35
H -
8
T
Series
T = Triac
RMS current
12 = 12 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
T = TO-220-AB
Packing
Blank = Tube
Table 6. Ordering information
DS13575 - Rev 2
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T1235H-8T
T1235H-8T
TO-220AB
2.1 g
50
Tube
page 9/11
T1235H-8T
Revision history
Table 7. Document revision history
DS13575 - Rev 2
Date
Version
Changes
20-Nov-2020
1
Initial release.
16-Dec-2020
2
Updated general description.
page 10/11
T1235H-8T
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13575 - Rev 2
page 11/11
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