T1235H

® T1235H 12A TRIACS A2 SNUBBERLESS™ HIGH TEMPERATURE Table 1: Main Features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 12 600 35 Unit A V mA A2 G A1 A2 DESCRIPTION Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) A1 A2 G A1 A2 G D2PAK (T1235H-600G) TO-220AB (T1235H-600T) Table 2: Order Codes Part Number T1235H-600G T1235H-600G-TR T1235H-600TRG Marking T1235H600G T1235H600G T1235H600T Value Tc = 135°C t = 20 ms t = 16.7 ms 12 140 145 112 Tj = 150°C Tj = 25°C Tj = 150°C Tj = 150°C 50 700 4 1 - 40 to + 150 - 40 to + 150 Unit A A A²s A/µs V A W °C Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25°C) F = 60 Hz I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns tp = 10 ms F = 120 Hz VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms voltage IGM PG(AV) Tstg Tj February 2006 Peak gate current Average gate power dissipation tp = 20 µs Storage junction temperature range Operating junction temperature range REV. 6 1/8 T1235H Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) Test Conditions VD = 12 V RL = 33 Ω VD = VDRM RL = 3.3 kΩ IT = 100 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 150°C I - III II Tj = 150°C Quadrant I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 35 1.3 0.15 35 50 80 300 5.3 Unit mA V V mA mA V/µs A/ms (dI/dt)c (2) Without snubber Tj = 150°C Table 5: Static Characteristics Symbol VT (2) Vto (2) Rd (2) IDRM IRRM ITM = 17 A Test Conditions tp = 380 µs Tj = 25°C Tj = 150°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 150°C MAX. MAX. MAX. MAX. Value 1.55 0.80 25 5 5.5 mA 3.5 Unit V V mΩ µA Threshold voltage Dynamic resistance VDRM = VRRM VDRM/VRRM = 400V (at mains peak voltage) Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1. Table 6: Thermal resistance Symbol Rth(j-c) Junction to case (AC) Junction to ambient S = 1 cm² Parameter D2PAK TO-220AB D2PAK TO-220AB 45 60 °C/W Value 1.2 Unit °C/W Rth(j-a) S = Copper surface under tab. 2/8 T1235H Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) P(W) 14 12 10 8 6 4 2 14 12 10 8 6 4 2 Figure 2: RMS on-state current versus case temperature (full cycle) IT(RMS)(A) IT(RMS)(A) 0 0 2 4 6 8 10 12 0 0 25 50 TC(°C) 75 100 125 150 Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) IT(RMS)(A) 5 D PAK (S=1cm2) 2 Figure 4: Relative variation of thermal impedance versus pulse duration K=[Zth/Rth] 1.00 Zth(j-c) 4 3 0.10 2 Zth(j-a) 1 TC(°C) 0 0 25 50 75 100 125 150 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 5: On-state characteristics (maximum values) ITM(A) 200 100 Tj max. Vto = 0.85V Rd = 50 mΩ Tj = Tj max. Figure 6: Surge peak on-state current versus number of cycles ITSM(A) 150 125 t=20ms 100 Non repetitive Tj initial=25°C Tj = 25°C. One cycle 75 50 25 Repetitive TC=135°C 10 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Number of cycles 0 1 10 100 1000 3/8 T1235H Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t ITSM(A), I t (A s) 2000 Tj initial=25°C dI/dt limitation: 50A/µs 2 2 Figure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 2.0 IGT 1000 1.5 IH & IL 1.0 ITSM 0.5 tp(ms) 100 0.01 0.10 1.00 I2t Tj(°C) 0.0 10.00 -40 -20 0 20 40 60 80 100 120 140 160 Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6.0 5.0 Figure 10: Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C] 8 7 6 4.0 3.0 2.0 1.0 5 4 3 2 (dV/dt)c (V/µs) 0.0 0.1 1.0 10.0 100.0 1 0 25 50 75 Tj(°C) 100 125 150 Figure 11: Leakage current versus junction temperature for different values of blocking voltage (typical values) IDRM / IRRM (mA) 1E+1 Figure 12: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance VDRM / VRRM (V) 700 600 Tj = 150°C Rth(j-c) = 1.2°C/W 1E+0 VD = VR = 600V VD = VR = 400V 500 400 300 200 100 0 1E-1 VD = VR = 200V 1E-2 Tj(°C) 1E-3 50 75 100 125 150 Rth(c-a)(°C/W) 0 2 4 6 8 10 12 14 16 18 20 4/8 T1235H Figure 13: D2PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 16 20 24 28 32 36 40 D2PAK S(cm²) Figure 14: Ordering Information Scheme T 12 35 H - 600 G (-TR) Triac series Current 12 = 12A Sensitivity 35 = 35mA Temperature H = High Voltage 600 = 600V Package G = D2PAK T = TO-220AB Packing mode Blanck = D2PAK in Tube RG = TO-220AB in Tube -TR = Tape & Reel Table 7: Product Selector Part Numbers T1235H-600G T1235H-600T Voltage 600 V 600 V Sensitivity 35 mA 35 mA Type Snubberless Snubberless Package D2PAK TO-220AB 5/8 T1235H Figure 15: D2PAK Package Mechanical Data DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 4.30 4.60 0.169 2.49 2.69 0.098 0.03 0.23 0.001 0.70 0.93 0.027 1.25 1.40 0.048 0.055 0.45 0.60 0.017 1.21 1.36 0.047 8.95 9.35 0.352 10.00 10.28 0.393 4.88 5.28 0.192 15.00 15.85 0.590 1.27 1.40 0.050 1.40 1.75 0.055 0.40 0.016 0° 8° 0° REF. A E L2 C2 D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R A A1 A2 B B2 C C2 D E G L L2 L3 R V2 Max. 0.181 0.106 0.009 0.037 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 8° Figure 16: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/8 T1235H Figure 17: TO-220AB and TO-220AB Insulated Package Mechanical Data B b2 C REF. A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 8: Ordering Information Ordering type T1235H-600TRG T1235H-600G T1235H-600G-TR Table 9: Revision History Date Apr-2002 13-Feb-2006 Revision 5A 6 Last update. TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. Description of Changes Marking T1235H600T T1235H600G T1235H600G Package TO-220AB D2PAK Weight 2.3 g 1.5 g Base qty 50 50 1000 Delivery mode Tube Tube Tape & reel 7/8 T1235H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8