T1235T-8FP

T1235T-8FP 12 A Snubberless™ Triac Datasheet − production data Features A2 • Medium current Triac • High static and dynamic commutation G • Three quadrants A1 • ECOPACK®2 compliant component • Complies with UL standards (File ref: E81734) Applications G A2 A1 • General purpose AC line load switching • Motor control circuits • Small home appliances TO-220FPAB (T1235T-8FP) • Lighting • Inrush current limiting circuits • Overvoltage crowbar protection Table 1. Device summary Symbol Value Unit IT(rms) 12 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 35 mA Description Available in through-hole full pack package, the T1235T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 This is information on a product in full production. DocID024261 Rev 3 1/9 www.st.com 9 Characteristics 1 T1235T-8FP Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated) Symbol IT(rms) ITSM I ²t Parameter Value Unit A On-state rms current (full sine wave) Tc = 99 °C 12 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 20 ms 90 t = 16.7 ms 95 I²t value for fusing, Tj initial = 25 °C tp = 10 ms 54 Tj = 150 °C 600 Tj = 125 °C 800 A A ²s VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C 2 kV PG(AV) tp = 20 µs Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Vins Insulation rms voltage, 1 minute V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Value Min. 1.75 Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA IGT (1) VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IH (2) IT = 500 mA IL IG = 1.2 IGT mA I - III dV/dt (dI/dt)c II VD = 536 V, gate open Tj = 125 °C VD = 402 V, gate open Tj = 150 °C Tj = 125 °C Tj = 150 °C 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1 2/9 60 Max. Without snubber (dV/dt)c > 20 V/µs) DocID024261 Rev 3 Unit mA 65 2000 V/µs 1000 V/µs Min. 12 Min. A/ms 6 T1235T-8FP Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C Max. 37 mΩ 7.5 µA Tj = 25 °C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 °C VDRM = VRRM = 600 V 1 mA Tj = 150 °C Max. 2.7 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 3.5 °C/W Rth(j-a) Junction to ambient 60 °C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 16 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 14 14 IT(RMS)(A) 12 12 10 10 8 8 6 6 4 4 180° 2 2 IT(RMS)(A) TC(°C) 0 0 0 2 4 6 8 10 12 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] 2.5 Zth(j-c) Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(°C) tp (s) 0.0 1.0E-02 0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 DocID024261 Rev 3 3/9 Characteristics T1235T-8FP Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 100 ITSM(A) 90 Tjmax: Vt0 = 0.85 V Rd = 37 mW 80 t = 20 ms Non repetitive Tj initial = 25 °C 70 60 One cycle 50 10 40 Repetitive Tc = 99 °C 30 20 Tj=150 °C 10 VTM(V) Tj=25 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t 1000 Number of cycles 0 1 10 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A), I²t (A²s) 2.0 IGT, VGT [Tj] / IGT, VGT [Tj = 25 °C] Tj initial = 25 °C IGT Q3 dl/dt limitation: 100 A / µs 1.5 IGT Q1 - Q2 ITSM 100 VGT 1.0 I²t 0.5 10 tp(ms) sinusoidal pulse with width tp