T1235T-8I

T1235T-8I 12 A Snubberless™ Triac Datasheet -production data Description A1 A2 G Available in through-hole package, the T1235T-8I Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber RC circuit when the limits defined are respected. TO220AB insulated TO-220AB insulated provides tab insulation, UL1557 certified, rated at 2.5 kV RMS and UL-94, V0 resin compliance. Features          High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 °C maximum Tj Three quadrants Built-in ceramic for tab insulation Compliance to UL1557 standard (ref : E81734) ECOPACK®2 compliant component Complies with UL94,V0 Surge capability VDSM, VRSM = 900 V Package environmentally friendly Ecopack®2 graded (RoHS and Halogen Free compliance). Snubberless™ is a trademark of STMicroelectronics. Figure 1: Functional diagram A2 A2: Anode2 A1: Anode1 G : Gate Benefits     High immunity to false turn-on thanks to high static dV/dt Better turn-off in high temperature environments thanks to (dI/dt)c Increase of thermal margin due to extended working Tj up to 150 °C Better thermal resistance due to the ceramic inside the package A1 Table 1: Device summary Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA Applications        G General purpose AC line load switching Motor control circuits Home appliances Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection December 2017 DocID030976 Rev 2 This is information on a product in full production. 1/9 www.st.com Characteristics 1 T1235T-8I Characteristics Table 2: Absolute maximum ratings (limiting values) Symbol IT(RMS) ITSM I2 t dl/dt Parameter Value Unit A RMS on-state current (full sine wave) Tc = 114 °C 12 Non repetitive surge peak on-state current, Tj initial = 25 °C tp = 16.7 ms 95 tp = 20 ms 90 I2t value for fusing Tj initial = 25 °C 54 A2s Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns f = 100 Hz 100 A/µs Tj = 150 °C 600 V A VDRM/VRRM Repetitive peak off-state voltage Tj = 125 °C 800 V VDSM/VRSM Non Repetitive peak off-state voltage tp = 10 ms 900 V Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Vins Insulation RMS voltage, 1 minute, UL1557 certified (E81734) 2.5 kV IGM PG(AV) Tstg tp = 20 µs Average gate power dissipation Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Value Unit VD = 12 V, RL = 33 Ω I - II - III Min. 1.75 mA VD = 12 V, RL = 33 Ω I - II - III Max. 35 mA VGT VD = 12 V, RL = 33 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C I - II - III Min. 0.2 V IG = 1.2 x IGT I - III Max. 60 mA IG = 1.2 x IGT II Max. 80 mA Max. 40 mA IGT IL IH(1) dV/dt(1) (dl/dt)c(1) IT = 500 mA, gate open VD = 536 V, gate open Tj = 125 °C Min. 2000 V/µs VD = 402 V, gate open Tj = 150 °C Min. 1000 V/µs Tj = 125 °C Min. 12 A/ms Tj = 150 °C Min. 6 A/ms Without snubber, (dV/dt)c > 20 V/µs Notes: (1)For 2/9 Quadrants; Tj both polarities of A2 referenced to A1. DocID030976 Rev 2 T1235T-8I Characteristics Table 4: Static characteristics Symbol Test conditions Tj Value Unit Max. 1.60 V 150 °C Max. 0.85 V 150 °C Max. 50 mΩ VTM(1) IT = 17 A, tp = 380 µs 25 °C VTO(1) Threshold on-state voltage RD(1) Dynamic resistance IDRM/IRRM 25 °C VDRM = VRRM = 800 V 125°C VDRM = VRRM = 600 V 150 °C Max. Max. 5 µA 1 mA 3.1 mA Value Unit Notes: (1)For both polarities of A2 referenced to A1. Table 5: Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) Max. 2.6 Rth(j-a) Junction to ambient Typ. 60 DocID030976 Rev 2 °C/W 3/9 Characteristics 1.1 T1235T-8I Characteristics (curves) Figure 3: On-state RMS current versus case temperature Figure 2: Maximum power dissipation versus on-state RMS current 18 IT(RMS)(A) P(W) 16 16 α = 180° α = 180° 14 12 12 10 8 8 6 4 4 180° 2 IT(RMS)(A) 0 0 2 4 0 6 8 10 12 Figure 4: On-state RMS current versus ambient temperature (free air convection) Tc(°C) 0 25 50 75 100 125 150 Figure 5: Relative variation of thermal impedance versus pulse duration K = [Zth/Rth] IT(RMS)(A) 1.0E+00 3.5 Zth(j-c) α = 180° 3.0 Zth(j-a) 2.5 2.0 1.0E-01 1.5 1.0 0.5 Ta(°C) 0.0 0 25 50 75 tp(s) 100 125 150 1.0E-02 1.0E-03 Figure 6: Relative variation of gate trigger voltage and current versus junction temperature (typical values) IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 Figure 7: Relative variation of holding current and latching current versus junction temperature (typical values) IH,IL [Tj] / IH,IL [Tj = 25 °C] 1.5 2.5 1.0E-02 IGT Q3 2.0 1.0 1.5 IGT Q1-Q2 IL VGT Q1-Q2-Q3 1.0 0.5 IH 0.5 Tj (°C) -50 4/9 -25 0 25 50 Tj (°C) 0.0 0.0 75 100 125 150 -50 DocID030976 Rev 2 -25 0 25 50 75 100 125 150 T1235T-8I Characteristics Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms Figure 8: Surge peak on-state current versus number of cycles ITSM (A) 100 ITSM(A) 1000 T j initial=25°C t=20ms O ne c yc le Non repetitive Tj initial = 25 °C dI/dt limitation: 100A/µs I TSM 50 100 Repetitive Tc = 114°C Number of cycles 0 1 10 100 1000 0.01 Figure 10: On-state characteristics (maximum values) ITM(A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 °C Tj = 150 °C 10 VTM(V) 1 0 1 2 3 4 5 Figure 12: Relative variation of static dV/dt immunity versus junction temperature 6 0.10 1.00 10.00 Figure 11: Relative variation of critical rate of decrease of main current versus junction temperature 100 Tj max. Vto = 0.85 V Rd = 50 mΩ t p (ms) 10 (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] Tj(°C) 25 50 75 100 125 150 Figure 13: Relative variation of leakage current versus junction temperature for different values of blocking voltage dV/dt [Tj] / dV/dt [Tj = 150 °C] IDRM, IRRM at [Tj] / IDRM, IRRM at [Tj max.]* VD = VR = 402 V 1.0E+00 5 4 1.0E-01 VDRM = VRRM = 800 V 3 VDRM = VRRM = 600 V 2 1.0E-02 1 *[Tj max = 125 °C; VDRM, VRRM = 800 V] [Tj max = 150 °C; V DRM, V RRM = 600 V] T (°C) j Tj(°C) 0 25 50 75 100 125 150 1.0E-03 25 DocID030976 Rev 2 50 75 100 125 150 5/9 Package information 2 T1235T-8I Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 ECOPACK®2 (Lead-free plating and Halogen free package compliance) Lead-free package leads finishing Halogen-free molding compound resin meets UL94 standard level V0. Recommended torque (for package screwing assembly): 0.4 to 0.6 N·m TO-220AB Insulated package information Figure 14: TO-220AB Insulated package outline 6/9 DocID030976 Rev 2 Package information T1235T-8I Table 6: TO-220AB Insulated package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 Notes: (1)Inch dimensions are for reference only. DocID030976 Rev 2 7/9 Ordering information 3 T1235T-8I Ordering information Figure 15: Ordering information scheme T 12 35 T - 8 I Series T = Triac RMS current 12 = 12 A IGT current 35 = 35 mA Specific application T = increased (dl/dt) and dV/dt producing reduced ITSM Voltage 8 = 800 V Package I = TO-220AB insulated tab Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode T1235T-8I T1235T-8I TO-220AB insulated 2.3 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 17-Oct-2017 1 Initial release. 18-Dec-2017 2 Updated Table 4: "Static characteristics". DocID030976 Rev 2 T1235T-8I IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030976 Rev 2 9/9