T1235T-8T

T1235T-8T Datasheet 12 A 800 V Snubberless Triac in TO-220AB package Features A2 • • • • G A1 Medium current Triac High static and dynamic commutation Three quadrants ECOPACK2 compliant Applications A2 G A2 A1 TO-220AB • • • • • • General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in through-hole package, the T1235T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Product status link T1235T-8T Product summary Order code T1235T-8T Package TO-220AB IT(RMS) 12 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA DS9635 - Rev 4 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com T1235T-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Value Unit Tc = 131 °C 12 A F = 50 Hz t = 20 ms 90 F = 60 Hz t = 16.7 ms 95 tp = 10 ms 54 Tj = 150 °C 600 Tj = 125 °C 800 Non repetitive surge peak off-state voltage tp = 10 ms 900 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature soldering during 10 s 260 °C IT(RMS) ITSM I2t Parameter On-state RMS current (full sine wave) Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) VDRM/VRRM Repetitive surge peak off-state voltage VDSM/VRSM PG(AV) Tstg tp = 20 µs Average gate power dissipation A A2s V Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value Min. 1.75 Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA IGT (1) VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C IH IT = 500 mA IL IG = 1.2 x IGT dV/dt(2) (dI/dt)c(2) I - III II VD = 536 V, gate open Tj = 125 °C VD = 402 V, gate open Tj = 150 °C Without snubber (dV/dt)c > 20 V/μs Unit Tj = 125 °C Tj = 150 °C Max. Min. Min. 60 65 2000 1000 12 6 mA mA V/µs A/ms 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1 DS9635 - Rev 4 page 2/11 T1235T-8T Characteristics Table 3. Static characteristics Symbol VT (1) Test conditions Value Unit ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 VTO Threshold voltage Tj = 150 °C Max. 0.85 Rd(1) Dynamic resistance Tj = 150 °C Max. 37 mΩ 7.5 µA (1) IDRM, IRRM Tj = 25 °C VD = VR = 800 V Tj = 125 °C VD = VR = 600 V Tj = 150 °C V Max. Max. 1.0 2.7 mA 1. For both polarities of A2 referenced to A1 Table 4. Thermal parameters Symbol DS9635 - Rev 4 Parameter Value Unit Rth(j-c) Junction to case (AC) 1.3 °C/W Rth(j-a) Junction to ambient 60 °C/W page 3/11 T1235T-8T Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) Figure 2. On-state RMS current versus case temperature (full cycle) P(W) 16 14 IT(RMS)( A) 14 12 12 10 10 8 8 6 6 4 4 180° 2 2 IT(RMS)( A) 0 0 2 4 6 12 10 8 Figure 3. On-state RMS current versus ambient temperature (free air convection) 3.0 IT(RMS)( A) TC(°C) 0 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Z th / Rth ] Zth(j-c) 2.5 Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(°C) 0.0 0 25 50 75 t p (s) 100 125 150 Figure 5. On-state characteristics (maximum values) 100 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 ITSM(A) 90 Tjmax: Vt0 = 0.85 V Rd = 37 mΩ 80 t = 20 ms 70 60 10 One cycle Non repetitive Tj initial=25 °C 50 40 30 20 Tj=150 °C Repetitive TC=131 °C 10 VTM(V) Tj=25 °C Number of cycles 0 1 0.0 DS9635 - Rev 4 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 4.0 1 10 100 1000 page 4/11 T1235T-8T Characteristics (curves) Figure 7. Non repetitive surge peak on-state current 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A) Tj initial = 25 °C dl/dt limitation: 100 IGT, VGT [ Tj] / IGT, VG T [ Tj = 25 °C] 2.0 IGT Q3 A / µs 1.5 ITSM 100 IGT Q1 - Q2 VGT 1.0 0.5 t p( ms ) sinusoidal pulse with width t p