T1610T-8FP

T1610T-8FP 16 A logic level Triac Datasheet − production data Description $ Available in through-hole fullpack package, the T1610T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller thanks to its 10 mA gate current requirement. Provide UL certified insulation rated at 2000 VRMS. * $ $ Table 1. Device summary * 72)3$% $ $ Symbol Value Unit IT(rms) 16 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 10 mA Features • Medium current Triac • Three triggering quadrants Triac • ECOPACK®2 compliant component • Complies with UL standards (File ref: E81734) • 16 A high performance Triac: – High Tj family – High dI/dt family – High dV/dt family • Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS Applications • General purpose AC line load switching • Motor control circuits • Small home appliances • Lighting • Inrush current limiting circuits • Overvoltage crowbar protection February 2015 This is information on a product in full production. DocID025756 Rev 2 1/9 www.st.com 9 Characteristics 1 T1610T-8FP Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated) Symbol IT(rms) ITSM I ²t Parameter Value Unit A On-state rms current (full sine wave) Tc = 87 °C 16 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 20 ms 120 t = 16.7 ms 126 I²t value for fusing, Tj initial = 25 °C tp = 10 ms 95 Tj = 150 °C 600 Tj = 125 °C 800 A A ²s VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C 2 kV PG(AV) tp = 20 µs Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Vins Insulation rms voltage, 1 minute V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant 0.5 Max. 10 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 15 mA VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 k Ω Tj = 150 °C IH IT = 500 mA mA I - III IL dV/dt(1) (dI/dt)c (1) (dI/dt)c(1) IG = 1.2 IGT II VD = VR = 536 V, gate open Tj = 125 °C VD = VR = 402 V, gate open Tj = 150 °C Tj = 125 °C Tj = 125 °C (dV/dt)c = 10 V/µs 1. For both polarities of A2 referenced to A1 DocID025756 Rev 2 mA 25 250 V/µs 170 V/µs Min. 21.6 Min. Tj = 150 °C Tj = 150 °C 2/9 20 Max. (dV/dt)c = 0.1 V/µs Unit Min. IGT (1) Value A/ms 15.1 11.3 Min. A/ms 5.0 T1610T-8FP Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 22.6 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C Max. 27 mΩ 7.5 µA Tj = 25 °C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 °C VDRM = VRRM = 600 V 1 mA Tj = 150 °C Max. 3.0 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 3.3 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 20 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 18 18 IT(RMS)(A) 16 16 14 14 12 12 10 10 8 8 6 6 4 180° 4 2 IT(RMS)(A) 2 0 2 4 6 8 10 12 14 16 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 TC(°C) 0 0 IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] 2.5 Zth(j-c) Zth(j-a) 2.0 1.0E-01 1.5 1.0 0.5 Ta(°C) 0.0 1.0E-02 0 25 50 75 100 125 150 tp (s) 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 DocID025756 Rev 2 3/9 Characteristics T1610T-8FP Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 1000 ITSM(A) 130 Tjmax: Vto = 0.85 V Rd = 27 mW 120 110 t = 20 ms 100 90 100 One cycle Non repetitive Tj initial = 25 °C 80 70 60 50 10 40 Repetitive Tc = 87 °C 30 20 Tj=150 °C Tj=25 °C 10 VTM(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t (half cycle) 10000 Number of cycles 0 1 ITSM(A), I²t (A²s) Tj initial = 25 °C 1 10 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) IGT,VGT [T j] / IGT,VGT [T j=25 °C] 3.0 IGT Q3 dl/dt limitation: 100 A / µs 2.5 1000 2.0 ITSM IGT Q1-Q2 1.5 I²t 100 1.0 VGT 0.5 tp(ms) sinusoidal pulse with width tp