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T1630-800W

T1630-800W

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    T1630-800W - 16A SNUBBERLESS™ TRIAC - STMicroelectronics

  • 数据手册
  • 价格&库存
T1630-800W 数据手册
® T1620W T1630W 16A SNUBBERLESS™ TRIAC MAIN FEATURES Symbol IT(RMS) VDRM/VRRM IGT Value 16 600 and 800 20 to 30 Unit A V mA G A2 A1 DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T1620-600W/800W & T1630-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as vacuum cleaners, heating regulation. They comply with UL standards (ref. E81734). A1 A2 G ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM It dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 2 Value Tc= 80°C F = 50Hz F = 60Hz F = 120 Hz tp = 10ms tp = 20µs t = 20ms t = 16.7ms Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 16 200 218 220 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 125 Unit A A A2s A/µs V A W °C tp = 10 ms March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions VD=12V RL=30Ω VD=VDRM RL=3.3kΩ Tj = 125°C IT= 250mA IG = 1.2IGT Quadrant I-II-III I-II-III I-II-III MAX. MAX. MIN. MAX. I - III II MAX. MAX. MIN. MIN. T1620 20 1.3 0.2 35 70 80 300 8.5 T1630 30 Unit mA V V VGT VGD IH (2) 50 80 100 500 11 mA mA mA V/µs A/ms IL (2) dV/dt VD=67% VDRM Gate open Tj = 125°C Without snubber Tj = 125°C (dI/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO (2) Test Conditions ITM = 22.5 A tp = 380µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX Value 1.4 0.85 20 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM Rd(2) IDRM IRRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case (AC) Parameter Value 60 3.1 Unit °C/W °C/W PRODUCT SELECTOR Part Number T1620-600W T1620-800W T1630-600W T1630-800W Voltage 600V 800V 600V 800V Sensitivity 20 mA 20 mA 30 mA 30 mA Type Snubberless Snubberless Snubberless Snubberless Package ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB 2/5 T820W / T830W ORDERING INFORMATION T TRIAC SERIES CURRENT: 16A 16 xx - x00 W PACKAGE: W: ISOWATT220AB VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 20: 20mA 30: 30mA OTHER INFORMATION Part Number T1620-600W T1620-800W T1630-600W T1630-800W Marking T1620600W T1620800W T1630600W T1630800W Weight 2.3 g 2.3 g 2.3 g 2.3 g Base quantity 50 50 50 50 Packing mode Tube Tube Tube Tube Fig. 1: Maximum power dissipation versus RMS on-state current. P(W) 18 α=180° Fig. 2: RMS on-state current versus case temperature. IT(RMS)(A) 18 α=180° 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 180° 16 14 12 10 8 6 α IT(RMS)(A) α 4 2 0 0 25 50 75 100 125 Tc(°C) Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1.E+00 Zth(j-c) Fig. 4: On-state characteristics (maximum values). ITM(A) 100 1.E-01 Zth(j-a) Tj=125°C Tj=25°C 10 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 0.0 0.5 1.0 VTM(V) 1.5 2.0 Tj max. : Vto = 0.85 V Rd = 20 mΩ 2.5 3.0 3/5 T820W / T830W Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 220 200 180 160 140 120 100 80 60 40 20 0 1 10 100 1000 Repetitive Tc=80°C Non repetitive Tj initial=25°C t=20ms Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp
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