T1635H-600T-TR

T1635H-600T-TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    T1635H-600T-TR - Snubberless TM high temperature 16 A Triacs - STMicroelectronics

  • 数据手册
  • 价格&库存
T1635H-600T-TR 数据手册
T1635H Series Snubberless™ high temperature 16 A Triacs Main features Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 16 600 35 Unit A V mA A2 G A1 A2 A1 G A2 Description Specifically designed to operate at 150° C, the new 16 A T1635H Triacs provide an enhanced performance in terms of power loss and thermal dissipation. This facilitates the optimization of heatsink dimensioning, leading to improved space and cost effectiveness when compared to electromechanical solutions. Based on ST Snubberless™ technology, the T1635H series offers high commutation switching capabilities and high noise immunity levels on the full range of Tj. The T1635H series facilitates the optimization of the control of universal motors and inductive loads found in appliances such as vacuum cleaners, and washing machines. The T1635H Triacs are also suitable for use in high temperature environment found in hot appliances such as cookers, ovens, hobs, electric heaters, and coffee machines. D2PAK T1635H-G A2 TO-220AB Insulated T1635H-I G A1 A2 TO-220AB T1635H-T Order code Part number T1635H-600G T1635H-600G-TR T1635H-600TRG T1635H-600IRG Marking T1635H-600G T1635H-600G T1635H-600T T1635H-600I TM: Snubberless is a trademark of STMicroelectronics August 2006 Rev 1 1/10 www.st.com Characteristics T1635H Series 1 Table 1. Symbol Characteristics Absolute maximum ratings Parameter D2PAK TO-220AB TO-220AB Ins ITSM I²t dI/dt Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current IG = 2xIGT, tr ≤100 ns Non repetitive surge peak off state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 20 µs F = 60 Hz F = 50 Hz Tc = 130° C Tc = 110° C t = 16.7 ms t = 20 ms tp = 10 ms F = 120 Hz Tj = 150° C Tj = 25° C Tj = 150° C Tj = 150° C 170 A 160 128 50 700 4 1 -40 to +150 -40 to +150 A2s A/µs V A W °C Value Unit IT(RMS) RMS on-state current (full sine wave) 16 A VDSM/VRSM IGM PG(AV) Tstg Tj Table 2. Symbol IGT (1) VGT VGD IH (2) Electrical characteristics (Tj = 25° C, unless otherwise specified) Test conditions VD = 12 V, RL = 33 Ω VD = VDRM, RL =3.3 kΩ IT = 100 mA I - III IG = 1.2 x IGT VD = 67% VDRM, gate open, Tj = 150° C Without snubber, Tj = 150° C Quadrant II - III II - III II - III MAX MAX MIN MAX MAX II MIN MIN 80 300 7.1 Value 35 1.3 0.15 35 50 Unit mA V V mA mA IL dV/dt (2) (dI/dt)c (2) V/µs A/ms 1. minimum IGT is guaranteed at 5% of IGT max 2. for both polarities of A2 referenced to A1 2/10 T1635H Series Table 3. Symbol VTM (1) VTO RD (1) (1) Characteristics Static electrical characteristics Test conditions ITM= 22.5 A, tp = 380 µs Tj = 25° C Tj = 150° C Tj = 150° C Tj = 25° C VDRM = VRRM VD/VR = 400 V (at peak mains voltage) MAX MAX MAX Value 1.5 0.80 23 5 MAX 6.4 mA Tj = 150° C 4.2 Unit V V mΩ µA IDRM IRRM Tj = 150° C 1. for both polarities of A2 referenced to A1 Table 4. Symbol Thermal resistance Parameter D2PAK TO-220AB TO-220AB Ins SCU = 1 cm² D2PAK TO-220AB TO-220AB Ins Value 1.2 2.1 °C/W 45 60 Unit Rth (j-c) Junction to case (AC) Rth (j-a) Junction to ambient Figure 1. P(W) 18 16 14 12 10 8 6 4 2 0 0 2 α=180 ° Maximum power dissipation Figure 2. vs RMS on-state current (full cycle) IT(RMS) (A) 18 RMS on-state current vs case temperature (full cycle) TO-220AB/D²PAK 16 14 12 10 8 6 180° TO-220AB Insulated 4 2 0 α=180 ° IT(RMS)(A) 4 6 8 10 12 14 16 TC(°C) 25 50 75 100 125 150 0 3/10 Characteristics T1635H Series Figure 3. IT(RMS) (A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 RMS on-state current vs ambient Figure 4. temperature, PCB FR4, eCU = 35 µm 1.E+00 α=180 ° D²PAK SCU=1 cm² Relative variation of thermal impedance vs pulse duration K=[Zth/Rth] Zth(j-c) 1.E-01 Zth(j-a) 1.E-02 Tamb(°C) 50 75 100 125 150 1.E-03 1.E-03 1.E-02 1.E-01 tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 Figure 5. Relative variation of gate trigger current, holding current and latching current vs junction temperature (typical values) Figure 6. Surge peak on-state current vs number of cycles IGT, IH, IL [T j] / IGT, IH, IL [T j=25°C] 2.5 180 160 ITSM (A) 2.0 IGT 140 120 Non repetitive Tj initial=25 °C t=20ms One cycle 1.5 IH & IL 100 80 60 Repetitive Tc=113 °C 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 160 40 20 Number of cycles 0 1 10 100 1000 Figure 7. Figure 8. Non repetitive surge peak on-state current (sinusoidal pulse width tp
T1635H-600T-TR 价格&库存

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