T1635H-600TRG

T1635H Series Snubberless™ high temperature 16 A Triacs Main features Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600 V IGT (Q1) 35 mA ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O A2 G G A1 A2 Description A1 D2PAK T1635H-G Specifically designed to operate at 150° C, the new 16 A T1635H Triacs provide an enhanced performance in terms of power loss and thermal dissipation. This facilitates the optimization of heatsink dimensioning, leading to improved space and cost effectiveness when compared to electromechanical solutions. A2 TO-220AB Insulated T1635H-I A2 G Based on ST Snubberless™ technology, the T1635H series offers high commutation switching capabilities and high noise immunity levels on the full range of Tj. A1 A2 TO-220AB T1635H-T The T1635H series facilitates the optimization of the control of universal motors and inductive loads found in appliances such as vacuum cleaners, and washing machines. Order code The T1635H Triacs are also suitable for use in high temperature environment found in hot appliances such as cookers, ovens, hobs, electric heaters, and coffee machines. Part number Marking T1635H-600G T1635H-600G T1635H-600G-TR T1635H-600G T1635H-600TRG T1635H-600T T1635H-600IRG T1635H-600I TM: Snubberless is a trademark of STMicroelectronics August 2006 Rev 1 1/10 www.st.com Characteristics T1635H Series 1 Characteristics Table 1. Absolute maximum ratings Symbol IT(RMS) Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25° C) ITSM I²t VDSM/VRSM IGM Tstg Tj IGT (1) VGT )- s ( t c VD = 12 V, RL = 33 Ω Pr IT = 100 mA e t e ol IL IG = 1.2 x IGT dV/dt (2) t = 20 ms 160 A 128 50 od Pr ol r P e t le A2s A/µs 700 V 4 A Tj = 150° C ete (s) t c u Tj = 150° C Tj = 25° C s b O (2) o r P e (s) du Quadrant so b O - ct uc 1 ) s t( W od -40 to +150 -40 to +150 °C Value Unit II - III MAX 35 mA II - III MAX 1.3 V II - III MIN 0.15 V MAX 35 mA 50 mA I - III MAX II 80 VD = 67% VDRM, gate open, Tj = 150° C MIN 300 V/µs Without snubber, Tj = 150° C MIN 7.1 A/ms t e l o 1. minimum IGT is guaranteed at 5% of IGT max 2. for both polarities of A2 referenced to A1 2/10 F = 50 Hz Tj = 150° C Test conditions VD = VDRM, RL =3.3 kΩ (2) s b O 170 tp = 20 µs u d o VGD (dI/dt)c t = 16.7 ms Electrical characteristics (Tj = 25° C, unless otherwise specified) Symbol s b O F = 60 Hz Non repetitive surge peak off state voltage Storage junction temperature range Operating junction temperature range Table 2. IH Tc = 110° C Average gate power dissipation PG(AV) A TO-220AB Ins F = 120 Hz Peak gate current 16 Tc = 130° C tp = 10 ms Critical rate of rise of on-state current IG = 2xIGT, tr ≤100 ns Unit D2PAK TO-220AB I²t Value for fusing dI/dt Value T1635H Series Table 3. Characteristics Static electrical characteristics Symbol VTM (1) Test conditions ITM= 22.5 A, tp = 380 µs Value Unit Tj = 25° C MAX 1.5 V VTO (1) Tj = 150° C MAX 0.80 V RD (1) Tj = 150° C MAX 23 mΩ 5 µA Tj = 25° C IDRM IRRM VDRM = VRRM Tj = 150° C MAX 6.4 mA VD/VR = 400 V (at peak mains voltage) Tj = 150° C 4.2 1. for both polarities of A2 referenced to A1 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Table 4. Thermal resistance Symbol Rth (j-c) Parameter Value Junction to case (AC) SCU = 1 cm² Rth (j-a) Figure 1. Junction to ambient 1.2 TO-220AB Ins 2.1 D2PAK 45 TO-220AB TO-220AB Ins 60 Maximum power dissipation Figure 2. vs RMS on-state current (full cycle) °C/W RMS on-state current vs case temperature (full cycle) IT(RMS) (A) P(W) 18 18 TO-220AB/D²PAK α=180 ° 16 D2PAK TO-220AB Unit 16 14 14 12 12 10 10 8 8 6 6 4 4 180° 2 TO-220AB Insulated α=180 ° 2 IT(RMS)(A) 0 TC(°C) 0 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 3/10 Characteristics Figure 3. T1635H Series RMS on-state current vs ambient Figure 4. temperature, PCB FR4, eCU = 35 µm IT(RMS) (A) 4.5 1.E+00 Relative variation of thermal impedance vs pulse duration K=[Zth/Rth] α=180 ° D²PAK SCU=1 cm² 4.0 Zth(j-c) 3.5 3.0 1.E-01 Zth(j-a) 2.5 2.0 1.E-02 1.5 1.0 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 0.5 Tamb(°C) tP(s) 0.0 0 25 Figure 5. 50 75 100 125 150 1.E-03 1.E-03 1.E-02 Figure 6. Relative variation of gate trigger current, holding current and latching current vs junction temperature (typical values) IGT, IH, IL [T j] / IGT, IH, IL [T j=25°C] 180 2.5 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Surge peak on-state current vs number of cycles ITSM (A) 160 IGT 2.0 t=20ms Non repetitive Tj initial=25 °C 140 One cycle 120 1.5 100 IH & IL 80 Repetitive Tc=113 °C 1.0 60 40 0.5 20 Tj(°C) Number of cycles 0.0 0 -40 -20 0 Figure 7. 10000 20 40 60 80 100 120 140 160 1 10 Figure 8. Non repetitive surge peak on-state current (sinusoidal pulse width tp