T1635T-8I

T1620T-8I, T1635T-8I Snubberless™ 16 A Triac Datasheet − production data Features A2 ■ High static and dynamic commutation ■ Three quadrants ■ Snubberless device ■ Package is RoHS (2002/95/EC) compliant ■ Tab insulated, voltage = 2500 V rms ■ UL certified (ref. file E81734) G A1 A1 A2 G Applications ■ General purpose AC line load switching ■ Home appliances: – Fan – Pump – Solenoid TO-220AB insulated (T1620T-8l T1635T-8l) Table 1. Device summary Order code Quadrants Value IGT (mA) ■ Lighting T1620T-8I I - II - III 20 ■ Heaters T1635T-8I I - II - III 35 ■ Inrush current limiting circuits ■ Overvoltage crowbar protection circuits Description Available in TO220AB-Ins. (ceramic insulated), the T1620T-8I, and T1635T-8I Triacs can be used as on/off or phase angle function controllers in general purpose AC switching. These devices can be used without snubber (R + C networks) if the datasheet limits are respected. Provides insulation rated at 2500 V rms (TO220AB insulated package). TM: Snubberless is a trademark of STMicroelectronics April 2012 This is information on a product in full production. Doc ID 022134 Rev 2 1/10 www.st.com 10 Characteristics T1620T-8I, T1635T-8I 1 Characteristics Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified) Symbol IT(RMS) ITSM I²t Parameter 16 Tc = 119 °C 12 F = 50 Hz tp = 20 ms 120 F = 60 Hz tp = 16.7 ms 126 tp = 10 ms 95 Tj = 150 °C 600 Tj = 125 °C 800 Tj = 25 °C 900 V F = 100 Hz 100 A/µs Tj = 150 °C 4 A Tj = 150 °C 1 W -40 to +150 -40 to +150 °C Lead temperature for soldering during 10 s (at 4 mm from case for TO220AB-ins.) 260 °C Insulation rms voltage, 1 minute, TO220AB ceramic insulated 2500 V Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing Repetitive peak off-state voltage, gate open VDSM, VRSM Non repetitive surge peak off-state voltage dI/dt Critical rate of rise of on-state current IG = 2 x IGT IGM Peak gate current Tstg Tj TL Vins (rms) 2/10 Unit Tc = 108 °C On-state rms current (full sine wave) VDRM/ VRRM PG(AV) Value tp = 10 ms tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Doc ID 022134 Rev 2 A A A²s V T1620T-8I, T1635T-8I Table 3. Characteristics Electrical characteristics (Tj = 25 °C, unless otherwise specified) Value Symbol Test conditions Quadrant Unit T1620T T1635T I - II - III MIN. 1 1.75 mA I - II - III MAX. 20 35 mA VD = 12 V, RL = 30 Ω All MAX. 1.3 V VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C All MIN. 0.2 V IGT (1) VD = 12 V, RL = 30 Ω VGT VGD (1) IH IT = 500 mA MAX. 25 45 35 55 40 65 1000 2000 500 1000 6 16 4.5 12 I - III IL dV/dt (1) IG = 1.2 IGT MAX. mA II VD = 67% x 800 V gate open Tj = 125 °C VD = 67% x 600 V gate open Tj = 150 °C (dl/dt)c (1) (dV/dt)c = snubberless (> 20 V/µs) MIN. Tj = 125 °C V/µs MIN. Tj = 150 °C tGT gate controlled turn on time ITM = 13 A, VD = 400 V, IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω I - II - III mA TYP. A/ms 2 µs 1. For both polarities of A2 referenced to A1 Table 4. Static characteristics Symbol VTM (1) Vto (1) Rd (1) IDRM IRRM Test conditions Value Unit ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V Threshold voltage Tj = 150 °C MAX. 0.85 V Dynamic resistance Tj = 150 °C MAX. 30 mΩ 5 µA Tj = 25 °C VDRM = VRRM = 800 V Tj = 125 °C VDRM = VRRM = 600 V Tj = 150 °C MAX. 1 mA 3.6 1. for both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.1 °C/W Rth(j-a) Junction to ambient 60 °C/W Doc ID 022134 Rev 2 3/10 Characteristics Figure 1. 20 T1620T-8I, T1635T-8I Maximum power dissipation versus Figure 2. on-state rms current (full cycle) P(W) 18 180° 18 On-state rms current versus case temperature (full cycle) IT(RMS)(A) 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 IT(RMS)(A) 0 0 2 4 Figure 3. 3.0 6 8 10 12 14 On-state rms current versus ambient temperature (free air convection) IT(RMS)(A) 16 TC(°C) 0 0 25 Figure 4. 1.0E+00 50 75 100 125 150 Relative variation of thermal impedance versus pulse duration K = [Zth / Rth] Zth(j-c) 2.5 Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(°C) 0.0 0 25 Figure 5. 50 Tp(s) 75 100 125 150 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 On-state characteristics (maximum Figure 6. values) 1000 ITM(A) 130 Tjmax: Vto = 0.85 V Rd = 30 mΩ Surge peak on-state current versus number of cycles ITSM(A) 120 110 t = 20 ms 100 90 100 One cycle 80 Non repetitive Tj initial = 25 °C 70 60 Tj = 150 °C 50 10 Repetitive Tc = 108 °C 40 30 Tj = 25 °C 20 0 4/10 10 VTM(V) 1 1 2 3 4 Number of cycles 0 5 Doc ID 022134 Rev 2 1 10 100 1000 T1620T-8I, T1635T-8I Figure 7. 10000 Characteristics Non repetitive surge peak on-state Figure 8. current and corresponding values of I2t ITSM (A), I²t (A²s) 2.0 Relative variation of gate trigger current versus junction temperature IGT[Tj]/IGT[Tj = 25 °C] Tj initial = 25 °C typical values 3Q IGT Q3 1.5 1000 ITSM 3Q IGT Q1-Q2 1.0 dl /dt limitation: 100 A / µs I²t 100 0.5 tp(ms) sinusoidal pulse with width tp