T2035-600G

® T2035-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION (dI/dt)c > 11 A/ms without snubber HIGH STATIC dV/dt > 500 V/µs DESCRIPTION The T2035-600G triac uses a high performance SNUBBERLESSTM technology. The part is intended for general purpose applications using surface mount technology. A2 A2 A1 G D2PAK ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltage RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current IG = 500 mA Tstg Tj Tl dIG /dt = 1 A/µs. 2 Value Tj = 125 °C Tc= 100 °C tp = 8.3ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 600 20 210 200 200 20 100 - 40, + 150 - 40, + 125 260 Unit V A A It dI/dt 2 A2s A/µs Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s °C °C January 1998 - Ed: 1D 1/5 T2035-600G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambiant (S=1cm2) Junction to case for DC Junction to case for AC 360 ° conduction angle (F=50Hz) Value 45 1.5 1.1 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω Tj= 25°C Quadrant I-II-III MIN MAX VGT VGD IH * IL VTM * IDRM IRRM dV/dt * (dI/dt)c * VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IT= 500mA IG = 1.2 IGT ITM= 28A tp= 380µs VD = VDRM VR = VRRM Linear slope up to VD=67%VDRM Gate open Without snubber Gate open Tj= 25°C Tj= 125°C Tj= 25°C Tj = 25°C Tj= 25°C Tj= 25°C Tj= 125 °C Tj= 125°C Tj= 125°C I-II-III I-II-III I-II-III MAX MIN MAX MAX MAX MAX MAX MIN MIN Sensitivity 2 35 1.3 0.2 35 80 1.5 5 2 500 11 V V mA mA V µA mA V/µs A/ms Unit mA IGM = 4 A (tp = 20 µs) * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add ”-TR” suffix for Tape & Reel shipment T 20 TRIAC CURRENT 2/5 ® 35 - 600 SENSITIVITY G PACKAGE : G = D2PAK VOLTAGE T2035-600G Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) 25 α=180 ° Rth=4°C/W Rth=2°C/W Rth=1°C/W Rth=0°C/W P(W) 25 20 15 10 5 0 0 5 10 15 20 α=30 ° α=60 ° α=90 ° α=120 ° Tcase (°C) 100 20 105 15 110 10 5 115 120 I T(RMS)(A) 0 0 α=180° Tamb(°C) 125 20 40 60 80 100 120 140 Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) 22 20 18 16 14 12 10 8 6 4 2 0 α=180° K=[Zth/Rth] 1.00 Zth(j-c) Zth(j-a) 0.10 Tcase( °C) 0 25 50 75 100 125 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature (typical values). IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.5 2.0 1.5 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH IGT Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 200 180 160 140 120 100 80 60 40 20 0 1 10 100 1000 Number of cycles Tj initial=25 C ° F=50Hz 3/5 ® T2035-600G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp