T2035H-600TRG

T2035H Series Snubberless™ high temperature 20 A Triacs Main features Symbol Value Unit IT(RMS) 20 A VDRM/VRRM 600 V IGT (Q1) 35 mA Tj MAX 150 °C ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O A2 G G A1 A2 Description D2PAK T2035H-G Specifically designed to operate at 150° C, the new 20 A T2035H Triacs provide an enhanced performance in terms of power loss and thermal dissipation. This facilitates the optimization of heatsink dimensioning, leading to improved space and cost effectiveness when compared to electromechanical solutions. A2 A1 TO-220AB Insulated T2035H-I A2 G A1 Based on ST Snubberless™ technology, the T2035H series offers high commutation switching capabilities and high noise immunity levels on the full range of Tj. A2 TO-220AB T2035H-T The T2035H series facilitates the optimization of the control of universal motors and inductive loads found in appliances such as vacuum cleaners, and washing machines. Order code The T2035H Triacs are also suitable for use in high temperature environment found in hot appliances such as cookers, ovens, hobs, electric heaters, and coffee machines. Part number Marking T2035H-600G T2035H-600G T2035H-600G-TR T2035H-600G T2035H-600TRG T2035H-600T T2035H-600IRG T2035H-600I TM: Snubberless is a trademark of STMicroelectronics September 2006 Rev 2 1/10 www.st.com 10 Characteristics T2035H Series 1 Characteristics Table 1. Absolute maximum ratings Symbol IT(RMS) ITSM I²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj TI Table 2. Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle sine wave, Tj initial = 25° C) VGT 200 A 283 50 od Pr ol r P e t le s b O A2s V 4 A uc 1 od A/µs 700 Tj = 150° C ete (s) t c u Tj = 125° C Tj = 25° C so Test conditions t c u VD = 12 V, RL = 33 Ω od Pr (s) b O - IL IG = 1.2 x IGT e t e ol o r P e ct du VD = 67% VDRM, gate open, Tj = 150° C t e l o Without snubber, Tj = 150° C 1. minimum IGT is guaranteed at 5% of IGT max 2. for both polarities of A2 referenced to A1 2/10 t = 20 ms ) s t( W -40 to +150 -30 to +150 °C 260 °C Electrical characteristics (Tj = 25° C, unless otherwise specified) IT = 100 mA s b O F = 50 Hz Maximum leads soldering temperature during 10 s IH (2) (dI/dt)c (2) 210 Tj = 150° C VD = VDRM, RL =3.3 kΩ, Tj = 150° C dV/dt (2) t = 16.7 ms tp = 20 µs VGD s b O F = 60 Hz Average gate power dissipation Symbol IGT (1) Tc = 105° C Non repetitive surge peak off state voltage ) (s A TO-220AB Ins F = 120 Hz Storage junction temperature range Operating junction temperature range 20 Tc = 127° C tp = 10 ms Peak gate current Unit D2PAK TO-220AB I²t Value for fusing Critical rate of rise of on-state current IG = 2xIGT, tr ≤100 ns Value Quadrant Value Unit I - II - III MAX 35 mA I - II - III MAX 1.3 V I - II - III MIN 0.15 V MAX 35 mA 50 mA I - III MAX II 80 MIN 300 V/µs MIN 8.9 A/ms T2035H Series Table 3. Characteristics Static electrical characteristics Symbol Test conditions VTM (1) ITM= 28 A, tp = 380 µs Value Unit Tj = 25° C MAX 1.5 V VTO (1) Tj = 150° C MAX 0.80 V RD (1) Tj = 150° C MAX 21 mΩ 5 µA Tj = 25° C VDRM = VRRM IDRM IRRM Tj = 150° C MAX 7.4 mA VD/VR = 400 V (at peak mains voltage) Tj = 150° C 4.8 1. for both polarities of A2 referenced to A1 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Table 4. Thermal resistance Symbol Parameter Value D2PAK TO-220AB Junction to case for full (AC) Rth (j-c) 1 TO-220AB Ins Rth (j-a) Figure 1. Junction to ambient Maximum power dissipation vs RMS on-state current (full cycle) 1.9 °C/W 2PAK S = 1 cm² D 45 TO-220AB TO-220AB Ins 60 Figure 2. RMS on-state current versus case temperature IT(RMS) (A) P(W) 24 22 α=180° 22 Unit TO-220AB/D2PAK 20 20 18 TO-220AB Ins 18 16 16 14 14 12 12 10 10 8 8 6 6 180° 4 2 4 2 IT(RMS)(A) 0 α=180° TC(°C) 0 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 3/10 Characteristics Figure 3. T2035H Series RMS on-state current vs ambient temperature (epoxy printed circuit board FR4 ecu = 35 µm) Figure 4. Relative variation of thermal impedance vs pulse duration K=[Zth/Rth] IT(RMS) (A) 4.5 1.E+00 α=180° SCU=1cm² 4.0 Zth(j-c) 3.5 3.0 1.E-01 Zth(j-a) 2.5 2.0 1.5 1.E-02 1.0 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 0.5 Tamb(°C) tP(s) 0.0 0 25 Figure 5. 50 75 100 125 150 On-state characteristics (maximum values) 1.E-03 1.E-03 1.E-02 Figure 6. ITM(A) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Surge peak on-state current vs number of cycles ITSM(A) 100 220 200 180 Tj=150°C t=20ms Non repetitive Tj initial=25°C 160 One cycle 140 Tj=25°C 120 10 100 Repetitive Tc=127°C 80 60 Tj max. : VT0 = 0.80 V RD = 21 mW VTM(V) 40 20 Number of cycles 0 1 0.0 0.5 Figure 7. 1.0 1.5 2.0 2.5 1 3.0 Non repetitive surge peak on-state current (sinusoidal pulse width tp