T2035H-8G
Datasheet
20 A - 800 V - 150 °C 8H Triac in D²PAK
Features
A2
G
A1
A2
•
•
•
20 A high current Triac
800 V symmetrical blocking voltage
150 °C maximum junction temperature Tj
•
•
•
•
Three triggering quadrants
High noise immunity - static dV / dt
Robust dynamic turn-off commutation - (dl/dt)c
ECOPACK2 compliant component
Applications
A1
A2
•
•
•
•
•
•
G
D²PAK
Home automation Smart AC plug
Water heater, room heater and coffee machine
AC Induction and Universal Motor control
Inrush current limiter in AC DC rectifiers
Lighting and automation I/O control
General purpose AC line load control
Description
Product status link
T2035H-8G
Product summary
IT(RMS)
20 A
VDRM/VRRM
800 V
VDSM/VRSM
900 V
IGT
35 mA
Tj max.
150 °C
Specifically designed to operate at 800 V and 150 °C, the T2035H-8G Triac housed
in D²PAK provides an enhanced thermal management: this 20 A Triac is the right
choice for a compact drive of heavy AC loads and enables the heatsink size
reduction.
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the Tj max.
The T2035H-8G safely optimizes the control of the hardest universal motors, heaters
and inductive loads for industrial control and home appliances.
DS13157 - Rev 3 - December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
T2035H-8G
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dl/dt
Parameter
20
Non repetitive surge peak on-state current (full cycle,
Tj initial = 25 °C)
t = 16.7 ms
210
t = 20 ms
200
I2t value for fusing
tp = 10 ms
264
A2s
Critical rate of rise of on-state current, IG = 2 x IGT, tr
≤ 100 ns, f = 100 Hz
Tj = 25 °C
100
A/µs
800
V
900
V
4
A
5
W
1
W
Storage temperature range
-40 to +150
°C
Operating junction temperature range
-40 to +150
°C
VDSM/VRSM
Non Repetitive peak off-state voltage
IGM
Peak gate current
PGM
Maximum gate power dissipation
Tj
A
Tc = 128 °C
Repetitive peak off-state voltage
Tstg
Unit
RMS on-state current (full sine wave)
VDRM/VRRM
PG(AV)
Value
tp = 10 ms, Tj = 25 °C
tp = 20 µs, Tj = 150 °C
Tj = 150 °C
Average gate power dissipation
A
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants
Value
Unit
VD = 12 V, RL = 30 Ω
I - II - III
Min.
5
mA
VD = 12 V, RL = 30 Ω
I - II - III
Max.
35
mA
VGT
VD = 12 V, RL = 30 Ω
I - II - III
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ
I - II - III
Min.
0.15
V
I - III
Max.
50
mA
II
Max.
80
mA
Max.
35
mA
IGT
IL
IG = 1.2 x IGT
IH (1)
IT = 500 mA, gate open
dV/dt (1)
(dl/dt)c
Tj = 150 °C
(1)
VD = 536 V, gate open
Tj = 150 °C
Min.
2000
V/µs
Without snubber network
Tj = 150 °C
Min.
20
A/ms
1. For both polarities of A2 referenced to A1.
DS13157 - Rev 3
page 2/12
T2035H-8G
Characteristics
Table 3. Static characteristics
Symbol
VTM
(1)
VTO (1)
(1)
RD
IDRM/IRRM
Tj
Test conditions
Value
Unit
ITM = 28 A, tp = 380 µs
25 °C
Max.
1.55
V
Threshold voltage
150 °C
Max.
0.8
V
Dynamic resistance
150 °C
Max.
19
mΩ
2
µA
6.5
mA
2.8
mA
Value
Unit
Max.
1.0
°C/W
Typ.
45
°C/W
25 °C
VD = VR = VDRM = VRRM
150 °C
VD = VR = 400 V, peak voltage
150 °C
Max.
Max.
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance
Symbol
Rth(j-c)
Rth(j-a)
Parameter
Junction to case (AC)
Junction to ambient (SCU
(1)
=2
cm2)
1. Scu : copper pad surface under tab, 35 µm copper thickness on FR4 PCB.
DS13157 - Rev 3
page 3/12
T2035H-8G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current
Figure 2. On-state RMS current versus case temperature
25
P(W)
IT(RMS)(A)
25
α = 180°
α = 180°
20
20
15
15
10
10
5
5
180°
IT(RMS)(A)
0
0
2
4
6
8
10
Tc(°C)
12
14
16
18
20
0
0
25
50
75
100
125
150
Figure 3. On-state RMS current versus ambient
temperature (free air convection)
Figure 4. On-state characteristics (maximum values)
IT(RMS)(A)
1000
ITM(A)
5
Tj max.
Vto = 0.8 V
Rd = 19 mΩ
α = 180°
SCU = 2 cm² and thickness = 35 µm
4.5
4
100
3.5
3
Tj = 150 °C
2.5
2
10
Tj = 25 °C
1.5
1
Ta(°C)
0.5
0
0
25
50
75
100
125
0
150
Figure 5. Relative variation of thermal impedance versus
pulse duration
1.0E+00
VTM(V)
1
1
2
3
4
5
Figure 6. Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
K = [Zth/Rth]
Rth(c-a) (°C/W) (for heat sink sizing to avoid thermal runaway)
70
VDRM = VRRM = 400 V
VDRM = VRRM = 200 V
60
Zth(j-c)
1.0E-01
50
VDRM = VRRM = 600 V
Zth(j-a)
40
30
1.0E-02
VDRM = VRRM = 800 V
20
tp(s)
10
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E+04
0
1.0E-03
Ta (°C)
20
DS13157 - Rev 3
40
60
80
100
120
140
page 4/12
T2035H-8G
Characteristics (curves)
Figure 7. Thermal resistance junction to ambient versus
copper surface under tab
Figure 8. Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
Rth(j-a) (°C/W)
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V]
80
Epoxy printed circuit board FR4, eCu = 35 µm
1.0E+00
D²PAK
70
1.0E-01
60
VDRM = VRRM = 800 V
50
1.0E-02
40
VD = VR = 600 V
1.0E-03
30
20
1.0E-04
SCu (cm²)
10
0
0
5
10
15
20
25
30
35
40
Figure 9. Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
Tj(°C)
1.0E-05
25
50
75
100
125
150
Figure 10. Relative variation of holding current and
latching current versus junction temperature (typical
values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]
IH,IL [Tj] / IH,IL [Tj = 25 °C]
2.5
1.6
IH
IGT Q3
2
1.2
IGT Q1-Q2
IL
1.5
0.8
1
VGT Q1-Q2-Q3
0.4
0.5
Tj (°C)
0
-50
-25
0
25
50
Tj (°C)
75
100
125
150
Figure 11. Surge peak on-state current versus number of
cycles
250
0.0
-50
-25
0
25
50
75
100
125
150
Figure 12. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
ITSM(A)
ITSM(A)
10000
200
Tj initial=25°C
t=20ms
One cy cle
Non repetitive
Tj initial = 25 °C
150
1000
dI/dt limitation:
100A/µs
100
Repetitive
Tc = 128°C
ITSM
100
50
t p (ms)
Number of cycles
0
1
DS13157 - Rev 3
10
10
100
1000
0.01
0.10
1.00
10.00
page 5/12
T2035H-8G
Characteristics (curves)
Figure 13. Relative variation of static dV/dt immunity
versus junction temperature
4
dV/dt [Tj] / dV/dt [Tj = 150 °C]
Figure 14. Relative variation of critical rate of decrease of
main current versus junction temperature
14
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
12
VD = VR = 536 V
3
10
8
2
6
4
1
2
Tj(°C)
Tj(°C)
0
0
25
DS13157 - Rev 3
50
75
100
125
150
25
50
75
100
125
150
page 6/12
T2035H-8G
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
D²PAK package information
•
•
•
ECOPACK2 compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL94 flammability standard level V0
Figure 15. D²PAK package outline
A
E
E1
E2
H
D
D1
L2
c2
2
3
D2
L3
1
b2
b
e
Max resin gate protrusion: 0.5 mm (1)
G
A1
A2
A3
L
R
Gauge Plane
V2
c
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS13157 - Rev 3
page 7/12
T2035H-8G
D²PAK package information
Table 5. D²PAK package mechanical data
Dimensions
Inches(1)
Millimeters
Ref.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.1693
0.1811
A1
2.49
2.69
0.0980
0.1059
A2
0.03
0.23
0.0012
0.0091
A3
0.25
0.0098
b
0.70
0.93
0.0276
0.0366
b2
1.25
1.7
0.0492
0.0669
c
0.45
0.60
0.0177
0.0236
c2
1.21
1.36
0.0476
0.0535
D
8.95
9.35
0.3524
0.3681
D1
7.50
8.00
0.2953
0.3150
D2
1.30
1.70
0.0512
0.0669
e
2.54
E
10.00
10.28
0.3937
0.4047
E1
8.30
8.70
0.3268
0.3425
E2
6.85
7.25
0.2697
0.2854
G
4.88
5.28
0.1921
0.2079
H
15
15.85
0.5906
0.6240
L
1.78
2.28
0.0701
0.0898
L2
1.19
1.40
0.0468
0.0551
L3
1.40
1.75
0.0551
0.0689
R
V2(2)
0.10000
0.40
0°
0.0157
8°
0°
8°
1. Dimensions in inches are given for reference only
2. Degrees
DS13157 - Rev 3
page 8/12
T2035H-8G
D²PAK package information
Figure 16. D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
5.08
1.30
8.90
3.70
Figure 17. D²PAK stencil definitions (dimensions are in mm)
DS13157 - Rev 3
page 9/12
T2035H-8G
Ordering information
3
Ordering information
Figure 18. Ordering information scheme
T
20 35
H -
8
G
Series
T = Triac
RMS current
20 = 20 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
G = D²PAK
Packing
Blank = Tube
Table 6. Ordering information
Order code
T2035H-8G-TR
T2035H-8G
DS13157 - Rev 3
Marking
Package
Weight
T2035H-8G
D²PAK
1.6 g
Base qty.
Delivery mode
1000
Tape and reel 13"
50
Tube
page 10/12
T2035H-8G
Revision history
Table 7. Document revision history
DS13157 - Rev 3
Date
Version
Changes
21-Nov-2019
1
Initial release.
19-Feb-2020
2
Updated Table 2 and Table 3.
21-Dec-2020
3
Updated general description and Table 6. Inserted STPOWER logo.
page 11/12
T2035H-8G
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© 2020 STMicroelectronics – All rights reserved
DS13157 - Rev 3
page 12/12
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