T2035H-8T

T2035H-8T Datasheet 20 A - 800 V - 150 °C 8H Triac in TO-220AB Features A2 G A1 A2 • • • 20 A high current Triac 800 V symmetrical blocking voltage 150 °C maximum junction temperature Tj • • • • Three triggering quadrants High noise immunity - static dV / dt Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Applications G A2 A1 TO-220AB • • • • • • Home automation Smart AC plug Water heater, room heater and coffee machine AC Induction and Universal Motor control Inrush current limiter in AC DC rectifiers Lighting and automation I/O control General purpose AC line load control Description Product status link T2035H-8T Product summary IT(RMS) 20 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA Tj max. 150 °C Specifically designed to operate at 800 V and 150 °C, the T2035H-8T Triac housed in TO-220AB provides an enhanced thermal management: this 20 A Triac is the right choice for a compact drive of heavy AC loads and enables the heatsink size reduction. Based on the ST Snubberless high temperature technology, it offers higher specified turn off commutation and noise immunity levels up to the Tj max. The T2035H-8T safely optimizes the control of the hardest universal motors, heaters and inductive loads for industrial control and home appliances. DS13158 - Rev 3 - December 2020 For further information contact your local STMicroelectronics sales office. www.st.com T2035H-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) Parameter Value Unit A RMS on-state current (full sine wave) Tc = 128 °C 20 Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) t = 16.7 ms 210 t = 20 ms 200 I2t value for fusing tp = 10 ms 264 A2s Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz Tj = 25 °C 100 A/µs 800 V 900 V 4 A 5 W 1 W Storage temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C ITSM I2t dl/dt VDRM/VRRM Repetitive peak off-state voltage VDSM/VRSM Non Repetitive peak off-state voltage IGM Peak gate current PGM Maximum gate power dissipation PG(AV) Tstg tp = 10 ms, Tj = 25 °C tp = 20 µs, Tj = 150 °C Tj = 150 °C Average gate power dissipation A Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit VD = 12 V, RL = 30 Ω I - II - III Min. 5 mA VD = 12 V, RL = 30 Ω I - II - III Max. 35 mA VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ I - II - III Min. 0.15 V I - III Max. 50 mA II Max. 80 mA Max. 35 mA IGT IL IG = 1.2 x IGT IH (1) dV/dt (1) (dl/dt)c (1) Tj = 150 °C IT = 500 mA, gate open VD = 536 V, gate open Tj = 150 °C Min. 2000 V/µs Without snubber network Tj = 150 °C Min. 20 A/ms 1. For both polarities of A2 referenced to A1. DS13158 - Rev 3 page 2/11 T2035H-8T Characteristics Table 3. Static characteristics Symbol VTM (1) VTO (1) (1) RD IDRM/IRRM Tj Test conditions Value Unit ITM = 28 A, tp = 380 µs 25 °C Max. 1.55 V Threshold voltage 150 °C Max. 0.8 V Dynamic resistance 150 °C Max. 19 mΩ 2 µA 6.5 mA 2.8 mA Value Unit 25 °C VD = VR = VDRM = VRRM 150 °C VD = VR = 400 V, peak voltage 150 °C Max. Max. 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistance Symbol DS13158 - Rev 3 Parameter Rth(j-c) Junction to case (AC) Max. 1.0 °C/W Rth(j-a) Junction to ambient Typ. 60 °C/W page 3/11 T2035H-8T Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current Figure 2. On-state RMS current versus case temperature 25 P(W) IT(RMS)(A) 25 α = 180° α = 180° 20 20 15 15 10 10 5 IT(RMS)(A) 0 0 3.5 5 180° 2 4 6 8 10 Tc(°C) 12 14 16 18 20 0 0 25 50 75 100 125 150 Figure 3. On-state RMS current versus ambient temperature (free air convection) Figure 4. On-state characteristics (maximum values) IT(RMS)(A) 1000 ITM(A) Tj max. Vto = 0.8 V Rd = 19 mΩ α = 180° 3.0 2.5 100 2.0 Tj = 150 °C 1.5 10 Tj = 25 °C 1.0 0.5 Ta(°C) 0 25 50 75 VTM(V) 1 0 100 125 0 150 Figure 5. Relative variation of thermal impedance versus pulse duration K = [Zth/Rth] 1.0E+00 1 2 3 4 5 Figure 6. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages 70 Rth(c - a) (°C/W) (for heatsink sizing to avoid thermal runaway) Junction-to-ambiant thermal resistance : Typical 60°C/W (without heatsink) 60 Zth(j-c) VDRM=VRRM =400 V 50 1.0E-01 VDRM=VRRM =200 V VDRM=VRRM = 600 V Zth(j-a) 40 30 VDRM=VRRM = 800 V 1.0E-02 20 tp(s) 1.0E-03 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E+04 DS13158 - Rev 3 10 0 With 15°C/W heatsink Ta (°C) 20 40 60 80 100 120 140 page 4/11 T2035H-8T Characteristics (curves) Figure 7. Relative variation of gate trigger voltage and current versus junction temperature (typical values) Figure 8. Relative variation of holding current and latching current versus junction temperature (typical values) IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C] 2.5 1.6 IH IGT Q3 2 1.2 IGT Q1-Q2 IL 1.5 0.8 1 VGT Q1-Q2-Q3 0.4 0.5 Tj (°C) 0 -50 -25 0 25 50 Tj (°C) 75 100 125 150 Figure 9. Surge peak on-state current versus number of cycles 250 0.0 -50 -25 0 25 50 75 100 125 150 Figure 10. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms ITSM(A) ITSM(A) 10000 200 Tj initial=25°C t=20ms One cy cle Non repetitive Tj initial = 25 °C 150 1000 dI/dt limitation: 100A/µs 100 Repetitive Tc = 128°C ITSM 100 50 t p (ms) Number of cycles 0 1 10 100 1000 Figure 11. Relative variation of static dV/dt immunity versus junction temperature 4 10 dV/dt [Tj] / dV/dt [Tj = 150 °C] 0.01 0.10 1.00 10.00 Figure 12. Relative variation of critical rate of decrease of main current versus junction temperature 14 (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 12 VD = VR = 536 V 3 10 8 2 6 4 1 2 Tj(°C) Tj(°C) 0 0 25 DS13158 - Rev 3 50 75 100 125 150 25 50 75 100 125 150 page 5/11 T2035H-8T Characteristics (curves) Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V] 1.0E+00 1.0E-01 VDRM = VRRM = 800 V 1.0E-02 VD = VR = 600 V 1.0E-03 1.0E-04 Tj(°C) 1.0E-05 25 DS13158 - Rev 3 50 75 100 125 150 page 6/11 T2035H-8T Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AB package information • • • Molding compound resin is halogen free and meets UL94 flammability standard level V0 Lead-free plating package leads Recommended torque: 0.4 to 0.6 N·m Figure 14. TO-220AB package outline DS13158 - Rev 3 page 7/11 T2035H-8T TO-220AB package information Table 5. TO-220AB package mechanical data Dimensions Millimeters Ref. Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS13158 - Rev 3 page 8/11 T2035H-8T Ordering information 3 Ordering information Figure 15. Ordering information scheme T 20 35 H - 8 T Series T = Triac RMS current 20 = 20 A Gate triggering current 35 = 35 mA High temperature H = High noise immunity and robust commutations Voltage 8 = 800 V Package T = TO-220AB Packing Blank = Tube Table 6. Ordering information DS13158 - Rev 3 Marking Package Weight Base qty. Delivery mode T2035H-8T TO-220AB 2.1 g 50 Tube page 9/11 T2035H-8T Revision history Table 7. Document revision history DS13158 - Rev 3 Date Version Changes 18-Nov-2019 1 Initial release. 19-Feb-2020 2 Updated Table 2 and Table 3. 21-Dec-2020 3 Updated general description and Table 6. page 10/11 T2035H-8T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13158 - Rev 3 page 11/11