T410H-6T

T410H High temperature 4 A sensitive TRIACs Features A2 ■ Medium current TRIAC ■ Logic level sensitive TRIAC ■ 150 °C max. Tj turn-off commutation ■ Clip bounding ■ RoHS (2002/95/EC) compliant package G A1 Applications A2 ■ The T410H is designed for the control of AC actuators in appliances and industrial systems. ■ The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through this sensitive gate TRIAC. G A2 A1 TO-220AB T410H-6T Description Specifically designed to operate at 150 °C, the new 4 A T410H TRIAC provides an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, the T410H offers an IGT lower than 10 mA and specified minimal commutation and high noise immunity levels valid up to the Tj max. May 2009 Table 1. Device summary Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 V IGT MAX 10 mA Doc ID 15712 Rev 1 1/9 www.st.com 9 Characteristics T410H 1 Characteristics Table 2. Absolute maximum ratings Symbol IT(RMS) ITSM I ²t dI/dt Parameter On-state rms current (full sine wave) PG(AV) Tstg Tj Table 3. VGT VGD IH (1) IL dV/dt (1) (dI/dt)c (1) 4 A t = 16.7 ms 42 F = 50 Hz t = 20 ms 40 I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current A 11 A ²s Tj = 150 °C 50 A/µs tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V tp = 20 µs Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C Average gate power dissipation Storage junction temperature range Operating junction temperature range Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions VD = 12 V RL = 33 Ω Quadrant Min. Max. Unit I - II - III 1 10 mA 1.0 V I - II - III VD = VDRM, RL = 3.3 kΩ I - II - III 0.15 IT = 100 mA V 25 IG = 1.2 IGT I - III 30 II 35 mA mA VD = 67% VDRM, gate open, Tj = 150 °C 75 Logic level, 0.1 V/µs, Tj = 150 °C 5.7 Logic level, 15 V/µs, Tj = 150 °C 1.5 1. For both polarities of A2 referenced to A1. 2/9 Tc = 141 °C F = 60 Hz Symbol IGT Unit Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) VDSM/VRSM Non repetitive surge peak off-state voltage IGM Value Doc ID 15712 Rev 1 V/µs A/ms T410H Characteristics Table 4. Static characteristics Symbol VT (1) Test conditions Value Unit ITM = 5.6 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V Vt0 (1) Threshold voltage Tj = 150 °C MAX. 0.80 V Rd (1) Dynamic resistance Tj = 150 °C MAX. 80.0 mΩ Tj = 25 °C MAX. 5 µA Tj = 150 °C MAX. 2.2 VD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 1.75 VD/VR = 200 V (at peak mains voltage) Tj = 150 °C MAX. 1.5 VDRM = VRRM IDRM IRRM mA 1. for both polarities of A2 referenced to A1. Table 5. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient Figure 1. Value Unit 2.20 °C/W 60 Maximum power dissipation versus Figure 2. on-state rms current (full cycle) P(W) On-state rms current versus case temperature (full cycle) IT(RMS)(A) 4 4 3 3 2 2 1 1 TC(°C) IT(RMS)(A) 0 0 0 1 Figure 3. 2 3 4 On-state rms current versus ambient temperature (free air convection, full cycle) 0 25 Figure 4. 50 75 100 125 150 Relative variation of thermal impedance, versus pulse duration K=[Zth/Rth] IT(RMS)(A) 1.E+00 3.0 2.5 Zth(j-c) 1.E-01 2.0 Zth(j-a) 1.5 1.0 1.E-02 0.5 tp(s) Ta (°C) 0.0 0 25 50 75 100 125 150 1.E-03 1.E-03 Doc ID 15712 Rev 1 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 3/9 Characteristics Figure 5. T410H Relative variation of gate trigger Figure 6. current and voltage versus junction temperature (typical values) IGT, VGT[T j] / IGT, VGT[T j=25 °C] Relative variation of holding and latching current versus junction temperature (typical values) IH, IL [T j] / IH, IL [T j=25 °C] 2.0 3.0 IGT Q3 2.5 IGT Q1-Q2 1.5 IL 2.0 IH 1.0 1.5 1.0 VGT Q1-Q2-Q3 0.5 0.5 Tj(°C) Tj(°C) 0.0 0.0 -50 -25 Figure 7. 0 25 50 75 100 125 150 Surge peak on-state current versus number of cycles -50 -25 Figure 8. ITSM(A) 0 25 50 75 100 125 150 Non-repetitive surge peak on-state current and corresponding value of I2t ITSM (A), I²t (A²s) 1000 45 dI/dt limitation: 50 A/µs Tj initial=25 °C 40 t=20ms 35 ITSM One cycle Non repetitive Tj initial=25°C 30 100 25 20 15 10 I²t 10 Repetitive TC=141 °C 5 Number of cycles tP(ms) Sinusoidal pulse width tp < 10 ms 0 1 1 10 Figure 9. 100 1000 On-state characteristics (maximum values) 0.01 0.10 1.00 10.00 Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature ITM (A) (dI/dt)C [T j] / (dI/dt)c [T j=150 °C] 100 11 Tj max Vto = 0.80 V Rd = 80 mΩ 10 9 8 7 6 10 5 Tj=150 °C 4 Tj=25 °C 3 2 1 VTM (V) 0 4/9 1 2 3 T j(°C) 0 1 4 5 25 Doc ID 15712 Rev 1 50 75 100 125 150 T410H Characteristics Figure 11. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values) (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4 3 2 1 (dV/dt)C (V/µs) 0 0.1 1.0 Figure 12. Relative variation of static dV/dt immunity versus junction temperature 10.0 100.0 dV/dt [T j] / dV/dt [T j=150 °C] VD=VR=400 V T j(°C) 25 50 75 100 125 150 Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal junction temperature for different resistance versus repetitive peak values of blocking voltage off-state voltage IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150°C; 600V] Rth(c-a) (°C/W) 1.0E+00 80 VDRM=VRRM=600 V Rth(j-c)=2.2 °C/W TJ=150 °C 70 60 1.0E-01 VDRM=VRRM=400 V 50 VDRM=VRRM=200 V 1.0E-02 40 30 20 1.0E-03 10 VAC PEAK(V) T j(°C) 0 1.0E-04 25 50 75 100 125 150 200 Doc ID 15712 Rev 1 300 400 500 600 5/9 Ordering information scheme 2 T410H Ordering information scheme Figure 15. Ordering information scheme T Triac series Current 4=4A Sensitivity 10 = 10 mA High temperature Voltage 6 = 600 V Package T = TO-220AB 6/9 Doc ID 15712 Rev 1 4 10 H - 6 T T410H 3 Package information Package information ● Epoxy meets UL94, V0 ● Recommended torque 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AB dimensions Dimensions Ref. Millimeters Min. A 15.20 a1 C B ØI F A Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 b2 L Typ. Inches I4 l3 c2 a1 l2 a2 M b1 c1 e M Doc ID 15712 Rev 1 2.60 0.102 7/9 Ordering information 4 Ordering information Table 7. 5 Ordering information Order code Marking Package Weight Base qty Delivery mode T410H-6T T410H 6T TO-220AB 2.3 g 50 Tube Revision history Table 8. 8/9 T410H Document revision history Date Revision 15-May-2009 1 Changes First issue. 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