T435-700BTR

® T4 Series 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGTT (Q1) Value 4 600 to 800 5 to 35 Unit A V A2 G A2 A1 A2 mA A1 A2 G A1 A2 G DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...-...W version complies with UL standards (ref. E81734). DPAK (T4-B) IPAK (T4-H) A2 A1 A2 G A1 A2 G TO-220AB (T4-T) ISOWATT 220AB (T4-W) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) Parameter RMS on-state current (full sine wave) DPAK / IPAK TO-220AB ISOWATT 220AB ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz Tc = 110°C 4 Tc = 105°C t = 20 ms t = 16.7 ms 30 31 5.1 Tj = 125°C Tj = 125°C Tj = 125°C 50 4 1 - 40 to + 150 - 40 to + 125 A² s A/µs A W °C A Value Unit A I ²t dI/dt IGM PG(AV) Tstg Tj tp = 10 ms F = 120 Hz tp = 20 µs June 2003 - Ed: 5 1/8 T4 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant T405 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (dV/dt)c = 10 V/µs Without snubber MIN. MIN. (dI/dt)c (2) (dV/dt)c = 0.1 V/µs MAX. 10 10 15 20 1.8 0.9 5 T4 T410 10 1.3 0.2 15 25 30 40 2.7 2.0 35 50 60 400 2.5 V/µs A/ms T435 35 mA V V mA mA Unit VD = VDRM RL = 33 kΩ Tj = 125°C IT = 100 mA IG = 1.2 IGT STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 5.5 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.6 0.9 120 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Junction to case (AC) Parameter DPAK IPAK TO-220AB ISOWATT220AB Rth(j-a) Junction to ambient S = 0.5 cm² DPAK TO-220AB ISOWATT220AB IPAK S = Copper surface under tab Value 2.6 4.0 70 60 100 Unit °C/W °C/W 2/8 T T4 Series PRODUCT SELECTOR Part Number T405-xxxB T405-xxxH T405-xxxT T405-xxxW T410-xxxB T410-xxxH T410-xxxT T410-xxxW T435-xxxB T435-xxxH T435-xxxT T435-xxxW X X X X X X X X X X X X Voltage (xxx) 600 V 700 V X X X X X X X X X X X X 800 V X X X X X X X X X X X X 5 mA 5 mA 5 mA 5 mA 10 mA 10 mA 10 mA 10 mA 35 mA 35 mA 35 mA 35 mA Logic level Logic level Logic level Logic level Logic level Logic level Logic level Logic level Snubberless Snubberless Snubberless Snubberless DPAK IPAK TO-220AB ISOWATT220AB DPAK IPAK TO-220AB ISOWATT220AB DPAK IPAK TO-220AB ISOWATT220AB Sensitivity Type Package ORDERING INFORMATION T TRIAC SERIES CURRENT: 4A 4 05 - 600 B (-TR) SENSITIVITY: 05: 05mA 10: 10mA 35: 35mA VOLTAGE: 600: 600V 700: 700V 800: 800V PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel PACKAGE: B: DPAK H: IPAK T: TO-220AB W: ISOWATT220AB OTHER INFORMATION Part Number T4xx-yyyB T4xx-yyyB-TR T4xx-yyyH T4xx-yyyT T4xx-yyyW Note: x x = sensitivity, yyy = voltage Marking T4xxyyyB T4xxyyyB T4xxyyy T4xxyyyT T4xxyyyW Weight 0.3 g 0.3 g 0.4 g 2.3 g 2.1 g Base quantity 75 2500 75 50 50 Packing mode Tube Tape & reel Tube Tube Tube 3/8 T4 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P(W) 6 5 4 3 2 1 0 0.0 0.5 1.0 Fig. 2-1: RMS on-state current case versus temperature (full cycle). IT(RMS)(A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 TO-220AB/DPAK/IPAK ISOWATT220AB IT(RMS)(A) 1.5 2.0 2.5 3.0 3.5 4.0 Tc(°C) 0 25 50 75 100 125 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit FR4, copper thickness: 35µm),full cycle. IT(RMS)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 DPAK (S=0.5cm²) Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Rth(j-c) ISOWATT220AB TO-220AB/DPAK/IPAK Rth(j-a) 1E-1 DPAK/IPAK TO-220AB/ISOWATT220AB Tamb(°C) 0 25 50 75 100 125 1E-2 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 1.5 IH & IL IGT Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 35 30 25 20 15 10 Repetitive Tc=110°C Non repetitive Tj initial=25°C t=20ms One cycle 1.0 0.5 Tj(°C) 5 Number of cycles 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 4/8 T4 Series Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) 500 Tj initial=25°C dI/dt limitation: 50A/µs ITSM Fig. 7: values). On-state characteristics (maximum ITM(A) 30.0 10.0 Tj=Tj max. 100 10 tp (ms) 1 0.01 0.10 1.00 1.0 I²t 10.00 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tj max.: Vto= 0.90 V Rd= 120 mΩ Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 T435 3 2 1 Tj(°C) 100.0 T410 T405 (dV/dt)c (V/µs) 1.0 10.0 0 0 25 50 75 100 125 Fig. 10: DPAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 100 90 80 70 60 50 40 30 20 10 0 DPAK S(cm²) 0 4 8 12 16 20 24 28 32 36 40 5/8 T4 Series PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max Min. Inches Max. R R 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0° 8° 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/8 T4 Series PACKAGE MECHANICAL DATA ISOWATT220AB (Plastic) DIMENSIONS REF. Millimeters Min. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Max. Min. Inches Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C Millimeters Min. Typ. 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 0.024 0.048 0.173 0.019 0.094 0.094 Max. Min. Inches Typ. 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 Max. 0.625 b2 L F I A A a1 a2 B b1 b2 C c1 c2 e F I I4 15.20 15.90 0.598 l4 a1 c2 l3 l2 a2 b1 e M c1 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066 L l2 l3 M 7/8 T4 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIMENSIONS REF. Millimeters Min. A E B2 L2 C2 Inches Min. 0.086 0.035 0.027 0.025 0.204 0.035 Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10° Typ. Max. 2.4 1.1 1.3 0.9 5.4 0.85 D H L L1 B6 B3 B V1 A1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 2.2 0.9 0.7 0.64 5.2 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10° 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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