T610T-8FP

T610T-8FP 6 A logic level Triac Datasheet − production data $ Description $ Available in through-hole fullpack package, the T610T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller thanks to its 10 mA gate current requirement. Provide UL certified insulation rated at 2000 VRMS. * $ Table 1. Device summary * 72)3$% $ $ Symbol Value Unit IT(rms) 6 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 10 mA Features • Medium current Triac • Three triggering quadrants Triac • ECOPACK®2 compliant component • Complies with UL standards (File ref: E81734) • 6 A high performance Triac: – High Tj family – High dI/dt family – High dV/dt family • Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS Applications • General purpose AC line load switching • Motor control circuits • Small home appliances • Lighting • Inrush current limiting circuits • Overvoltage crowbar protection February 2015 This is information on a product in full production. DocID025568 Rev 2 1/9 www.st.com 9 Characteristics 1 T610T-8FP Characteristics Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated) Symbol IT(rms) ITSM I ²t Parameter A Tc = 117 °C 6 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 20 ms 45 t = 16.7 ms 47 I²t value for fusing, Tj initial = 25 °C tp = 10 ms 13 Tj = 150 °C 600 Tj = 125 °C 800 tp = 10 ms 900 V 100 A/µs Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C 2 kV Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz IGM Peak gate current tp = 20 µs Average gate power dissipation A Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Vins Unit On-state rms current (full sine wave) VDRM, VRRM PG(AV) Value Insulation rms voltage, 1 minute A ²s V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated) Symbol Test conditions Quadrant 0.5 Max. 10 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 15 mA I - III Max. 20 mA II Max. 25 mA 250 V/µs 170 V/µs VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 k Ω , Tj = 150 °C IH (1) IT = 500 mA IL IG = 1.2 IGT (dI/dt)c (1) VD = VR = 536 V, gate open Tj = 125 °C VD = VR = 402 V, gate open Tj = 150 °C Tj = 125 °C (dV/dt)c = 0.1 V/µs mA Min. 5.2 Min. Tj = 150 °C (dI/dt)c (1) Tj = 125 °C (dV/dt)c = 10 V/µs Tj = 150 °C 1. For both polarities of A2 referenced to A1 2/9 DocID025568 Rev 2 Unit Min. IGT dV/dt (1) Value A/ms 3.7 2.7 Min. A/ms 1.2 T610T-8FP Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 8.5 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C Max. 75 mΩ 5 µA Tj = 25 °C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 °C VDRM = VRRM = 600 V 0.6 mA Tj = 150 °C Max. 2.0 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 4.5 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 8 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 7  =180 IT(RMS)(A)  =180° 6 6 5 4 4 3 2 2 180°  IT(RMS)(A) 0 0 1 2 3 1  4 6 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 TC(°C) 0 5 IT(RMS)(A) 0 25 50 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth]  =180° 2.5 75 Zth(j-c) Zth(j-a) 2.0 1.0E-01 1.5 1.0 0.5 tp (s) Ta(°C) 0.0 0 25 50 75 100 125 150 1.0E-02 1.0E-03 DocID025568 Rev 2 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 3/9 Characteristics T610T-8FP Figure 5. On-state characteristics (maximum values) 100 ITM(A) ITSM(A) 50 45 40 35 30 25 20 15 10 Repetitive 5 TC= 117 °C 0 Tj max : Vto = 0.85 V Rd = 75 mΩ 10 Tj = 150 °C T j = 25 °C VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t 1000 Figure 6. Surge peak on-state current versus number of cycles t = 20 ms Non repetitive Tj initial=25°C One cycle Number of cycles 1 10 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A), I²t (A²s) I GT, VGT [ Tj ] / I GT ,V GT [ T j = 25 °C ] Tj initial = 25 °C dI/dt limitation: 100 A/µs 2.5 IGT Q1-Q2 2.0 ITSM 1.5 100 1.0 Half cycle sinusoidal pulse with width tp < 10 ms 10 0.01 0.10 VGT 0.5 I²t tp(ms) 1.00 10.00 Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values) 5 IGT Q3 0.0 -50 Tj(°C) -25 25 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) I , I [T j ] / I H , I L [T j = 25 °C ] 2.0 H L dV/dt [Tj ] / dV/dt [Tj =150 °C] VD = V R = 402 V ; 150°C VD = VR = 536 V ; 125°C 4 0 IH 1.5 IL 3 1.0 2 0.5 1 0 25 4/9 Tj(°C) 50 75 100 125 Tj(°C) 0.0 150 -50 DocID025568 Rev 2 -25 0 25 50 75 100 125 150 T610T-8FP Characteristics Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) 3 Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values) (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 8 (dI/dt)C [T j] / (dI/dt)c [T j=150 °C] (dV/dt)c = 10 V/µs 7 Tj = 150 ° C 6 2 5 4 1 3 Tj = 125 ° C 2 1 (dV/dt)c (V/µs) 0 0.1 1.0 10.0 Tj(°C) 0 25 100.0 50 75 100 125 150 Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) IDRM, IRRM [Tj;V DRM, V RRM] / IDRM, IRRM 1.0E+00 V DRM = V RRM = 800 V 1.0E-01 V DRM = V RRM = 600 V 1.0E-02 V DRM = V RRM = 400 V 1.0E-03 [Tj = 125 °C; 800 V] ; [Tj = 150°C; 600 V] Tj(°C) 1.0E-04 25 50 75 100 DocID025568 Rev 2 125 150 5/9 Package information 2 T610T-8FP Package information • Epoxy meets UL94, V0 • Lead-free package • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 14. TO-220FPAB dimension definitions A B H Dia L6 L2 L7 L3 L5 F1 L4 F2 F G1 G 6/9 D DocID025568 Rev 2 E T610T-8FP Package information Table 6. TO-220FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 DocID025568 Rev 2 7/9 Ordering information 3 T610T-8FP Ordering information Figure 15. Ordering information scheme T 6 10 T - 8 FP Triac Current 6=6A Gate sensitivity 10 = 10 mA Specific application T = Increased (dI/dt)c and dV/dt producing reduced ITSM Voltage (VDRM, VRRM) 8 = 800 V Package FP = TO-220FPAB Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode T610T-8FP T610T-8FP TO-220FPAB 2.0 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision Changes 05-Feb-2014 1 Initial release. 12-Feb-2015 2 Updated Features and Table 2. DocID025568 Rev 2 T610T-8FP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID025568 Rev 2 9/9