T610T-8T
Datasheet
6 A 800 V logic level Triac in TO-220AB package
Features
A2
•
•
•
G
Medium current Triac
Three quadrants
ECOPACK2 compliant
Applications
A1
A2
G
A2
A1
•
•
•
•
•
•
General purpose AC line load switching
Motor control circuits
Small home appliances
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
TO-220AB
Available in through-hole package, the T610T-8T Triac can be used for the on/off or
phase angle control function in general purpose AC switching.
This device can be directly driven by a microcontroller due to its 10 mA gate current
requirement.
Product status link
T610T-8T
Product summary
Order code
T610T-8T
Package
TO-220AB
IT(RMS)
6A
VDRM/VRRM
800 V
VDSM/VRSM
900 V
IGT
10 mA
DS10318 - Rev 2 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
T610T-8T
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Value
Unit
Tc = 135 °C
6
A
F = 50 Hz
t = 20 ms
45
F = 60 Hz
t = 16.7 ms
47
tp = 10 ms
13
Tj = 150 °C
600
Tj = 125 °C
800
Non repetitive surge peak off-state voltage
tp = 10 ms
900
V
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 100 Hz
100
A/µs
IGM
Peak gate current
Tj = 150 °C
4
A
Tj = 150 °C
1
W
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature soldering during 10 s
260
°C
IT(RMS)
ITSM
I2t
Parameter
On-state RMS current (full sine wave)
Non repetitive surge peak on-state current (Tj initial = 25 °C)
I2t value for fusing, (Tj initial = 25 °C)
VDRM/VRRM Repetitive surge peak off-state voltage
VDSM/VRSM
PG(AV)
Tstg
tp = 20 µs
Average gate power dissipation
A
A2s
V
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test conditions
Value
Min.
0.5
Max.
10
I - II - III
Max.
1.3
V
I - II - III
Min.
0.2
V
Max.
15
mA
IGT(1)
VD = 12 V, RL = 30 Ω
I - II - III
VGT
VD = 12 V, RL = 30 Ω
VGD
VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C
(1)
IH
IL
dV/dt(1)
IT = 500 mA
IG = 1.2 x IGT
I - III
II
VD = 536 V, gate open
Tj = 125 °C
VD = 402 V, gate open
Tj = 150 °C
(dV/dt)c = 0.1 V/μs
(dI/dt)c(1)
(dV/dt)c = 10 V/μs
Unit
Max.
Min.
Tj = 125 °C
Tj = 150 °C
Tj = 125 °C
Tj = 150 °C
20
25
250
170
mA
mA
V/µs
5.2
Min.
3.7
2.7
A/ms
1.2
1. For both polarities of A2 referenced to A1
DS10318 - Rev 2
page 2/11
T610T-8T
Characteristics
Table 3. Static characteristics
Symbol
VT(1)
Test conditions
Value
Unit
ITM = 8.5 A, tp = 380 µs
Tj = 25 °C
Max.
1.55
VTO
Threshold voltage
Tj = 150 °C
Max.
0.85
Rd(1)
Dynamic resistance
Tj = 150 °C
Max.
75
mΩ
5
µA
(1)
IDRM, IRRM
Tj = 25 °C
VD = VR = 800 V
Tj = 125 °C
VD = VR = 600 V
Tj = 150 °C
V
Max.
Max.
0.6
2.0
mA
1. For both polarities of A2 referenced to A1
Table 4. Thermal parameters
Symbol
DS10318 - Rev 2
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
2.1
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
page 3/11
T610T-8T
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus on-state
RMS current
P(W)
Figure 2. On-state RMS current versus case temperature
IT(RMS)(A)
7
8
α = 180°
6
α = 180°
5
6
4
4
3
2
2
180 °
1
α
α
0
0
1
2
3
4
5
Tc(°C)
0
IT(RMS)(A)
0
25
50
75
100
125
150
6
Figure 3. On-state RMS current versus ambient
temperature (free air convection)
IT(RMS)(A)
Figure 4. Relative variation of thermal impedance versus
pulse duration
1.0E+00
3.0
K = [Z / R ]
th th
Zth(j-c)
α = 180°
2.5
Zth(j-a)
2.0
1.5
1.0E-01
1.0
0.5
Ta(°C)
0.0
0
25
50
75
100
125
150
Figure 5. On-state characteristics (maximum values)
100
1.0E-02
1.0E-03
50
1.0E-01
1.0E+00
1.0E+01 1.0E+02
1.0E+03
ITSM(A)
45
Non repetitive Tj initial = 25 °C
40
10
1.0E-02
Figure 6. Surge peak on-state current versus number of
cycles
ITM(A)
Tj max:
Vto= 0.85 V
Rd = 75 mΩ
tP(s)
20 ms
35
One cycle
30
25
20
15
1
0.0
0.5
DS10318 - Rev 2
Repetitive Tc = 135 °C
10
Tj = 150 °C
Tj = 25 °C
1.0
1.5
2.0
VTM(V)
2.5
3.0
3.5
4.0
5
Number of cycles
0
1
10
100
1000
page 4/11
T610T-8T
Characteristics (curves)
Figure 7. Non repetitive surge peak on-state current
1000
Figure 8. Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
ITSM(A)
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]
Tj initial = 25 °C
2.5
I
GT
dl/dt limitation: 100 A/µs
2.0
ITSM
100
I
GT
Q3
Q1-Q2
1.5
1.0
VGT
0.5
Tp(ms)
10
0.01
0.10
1.00
10.00
Figure 9. Relative variation of critical rate of decrease of
main current (di/dt)c versus junction temperature (typical
values)
8
0
25
50
75
100
125
150
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
I
H
(dV/dt)c = 10 V/µs
7
-25
Figure 10. Relative variation of holding current and
latching current versus junction temperature (typical
values)
2.0
(dI/dt)c[Tj] / (dI/dt)c[Tj = 150 °C]
Tj(°C)
0.0
-50
1.5
I
L
6
5
1.0
4
3
0.5
2
1
0.0
-50
Tj(°C)
0
25
75
50
100
125
-25
0
25
50
75
100
125
150
150
Figure 11. Relative variation of critical rate of decrease of
main current (di/dt)c versus reapplied (dV/dt)c (maximum
values)
3
Tj(°C)
(dI/dt)c [ (dV/dt)c ] / specified (dI/dt)c
Figure 12. Relative variation of static dV/dt immunity
versus junction temperature (typical values)
5
dV/dt [Tj] / dV/dt [Tj= 150 °C]
VD = VR = 402 V; 150 (°C)
4
2
3
Tj = 150 (°C)
2
1
Tj = 125 (°C)
1
Tj (°C)
(dV/dt)c (V/µs)
0
0.1
DS10318 - Rev 2
1.0
10.0
0
100.0
25
50
75
100
125
150
page 5/11
T610T-8T
Characteristics (curves)
Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
1.0E+00
IDRM, IRRM [ Tj; VDRM, VRRM] / IDRM, IRRM
V
=V
= 800 V
DRM
RRM
1.0E-01
V
DRM
=V
RRM
= 600 V
V
DRM
1.0E-02
=V
RRM
= 400 V
1.0E-03
1.0E-04
25
DS10318 - Rev 2
[T = 125 °C; 800 V]
j
[T = 150 °C; 600 V]
j
Tj (°C)
50
75
100
125
150
page 6/11
T610T-8T
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
TO-220AB package information
•
•
•
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14. TO-220AB package outline
DS10318 - Rev 2
page 7/11
T610T-8T
TO-220AB package information
Table 5. TO-220AB package mechanical data
Dimensions
Ref.
Millimeters
Min.
A
Typ.
15.20
a1
Inches
Max.
Min.
15.90
0.5984
3.75
Typ.
Max.
0.6260
0.1476
a2
13.00
14.00
0.5118
0.5512
B
10.00
10.40
0.3937
0.4094
b1
0.61
0.88
0.0240
0.0346
b2
1.23
1.32
0.0484
0.0520
C
4.40
4.60
0.1732
0.1811
c1
0.49
0.70
0.0193
0.0276
c2
2.40
2.72
0.0945
0.1071
e
2.40
2.70
0.0945
0.1063
F
6.20
6.60
0.2441
0.2598
I
3.73
3.88
0.1469
0.1528
L
2.65
2.95
0.1043
0.1161
I2
1.14
1.70
0.0449
0.0669
I3
1.14
1.70
0.0449
0.0669
I4
15.80
16.80
0.6220
M
16.40
2.6
0.6457
0.6614
0.1024
1. Inch dimensions are for reference only.
DS10318 - Rev 2
page 8/11
T610T-8T
Ordering information
3
Ordering information
Figure 15. Ordering information scheme
T
6 10
T - 8
T
Triac
Current
6= 6A
Gate sensitivity
10 = 10 mA
Specific application
T = Increased (dI/dt) and dV/dt producing reduced ITSM
Voltage
8 = 800 V
Package
T = TO-220AB
Table 6. Ordering information
DS10318 - Rev 2
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T610T-8T
T610T-8T
TO-220AB
2.0 g
50
Tube
page 9/11
T610T-8T
Revision history
Table 7. Document revision history
DS10318 - Rev 2
Date
Revision
Changes
07-Nov-2014
1
Initial release.
13-Sep-2019
2
Updated Figure 14 and Table 5.
page 10/11
T610T-8T
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© 2019 STMicroelectronics – All rights reserved
DS10318 - Rev 2
page 11/11
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