T620-800W

® T620W T630W 6A SNUBBERLESS™ TRIAC MAIN FEATURES Symbol IT(RMS) VDRM/VRRM IGT Value 6 600 and 800 20 to 30 Unit A V mA G A2 A1 DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T620-600W/800W & T630-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as rice cookers. They comply with UL standards (ref. E81734). A1 A2 G ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM It dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 2 Value Tc= 105°C F = 50Hz F = 60Hz F = 120 Hz tp = 10ms tp = 20µs t = 20ms t = 16.7ms Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 6 80 84 36 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 125 Unit A A A2s A/µs V A W °C tp = 10 ms March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions VD=12V RL=30Ω VD=VDRM RL=3.3kΩ Tj = 125°C IT= 100mA IG = 1.2IGT Quadrant I-II-III I-II-III I-II-III MAX. MAX. MIN. MAX. I - III II MAX. MAX. MIN. MIN. T620 20 1.3 0.2 35 50 60 300 3.3 T630 30 Unit mA V V VGT VGD IH (2) 50 70 80 500 4.5 mA mA mA V/µs A/ms IL (2) dV/dt VD=67% VDRM Gate open Tj = 125°C Without snubber Tj = 125°C (dI/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO (2) Test Conditions ITM = 8.5 A tp = 380µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX Value 1.4 0.85 50 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM Rd(2) IDRM IRRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360° conduction angle) Parameter Value 50 3.4 Unit °C/W °C/W PRODUCT SELECTOR Part Number T620-600W T620-800W T630-600W T630-800W Voltage 600V 800V 600V 800V Sensitivity 20 mA 20 mA 30 mA 30 mA Type Snubberless Snubberless Snubberless Snubberless Package ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB 2/5 T820W / T830W ORDERING INFORMATION T TRIAC SERIES CURRENT: 6A 6 xx - x00 W PACKAGE: W: ISOWATT220AB VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 20: 20mA 30: 30mA OTHER INFORMATION Part Number T620-600W T620-800W T630-600W T630-800W Marking T620600W T620800W T630600W T630800W Weight 2.3 g 2.3 g 2.3 g 2.3 g Base quantity 50 50 50 50 Packing mode Tube Tube Tube Tube Fig. 1: Maximum power dissipation versus RMS on-state current. P(W) 7 α=180° Fig. 2: RMS on-state current versus case temperature. IT(RMS)(A) 7 α=180° 6 5 4 3 2 180° 6 5 4 3 2 1 α IT(RMS)(A) α 1 Tc(°C) 0 5.5 6.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1.E+00 Zth(j-c) Fig. 4: On-state characteristics (maximum values). ITM(A) 100 Tj=25°C Tj=125°C 1.E-01 Zth(j-a) 10 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 0 1 2 VTM(V) 3 4 5 Tj max. : Vto = 0.85 V Rd = 50 mΩ 6 3/5 T820W / T830W Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 90 80 70 60 50 40 30 I²t Repetitive Tc=105°C Non repetitive Tj initial=25°C t=20ms Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp