T630-600W

T620W T630W ® 6A SNUBBERLESS™ TRIAC A2 MAIN FEATURES Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IGT 20 to 30 mA G A1 DESCRIPTION G Based on ST’ Snubberless technology providing high commutation performances, the T620-600W/800W & T630-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as rice cookers. They comply with UL standards (ref. E81734). A1 A2 ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM 2 I t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj Parameter Value Unit Tc= 105°C 6 A F = 50Hz t = 20ms 80 A F = 60Hz t = 16.7ms 84 RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) 2 I t Value for fusing tp = 10 ms 36 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns F = 120 Hz Tj = 125°C 50 A/µs Non repetitive surge peak off-state voltage tp = 10ms Tj = 25°C VDRM/VRRM + 100 V Peak gate current tp = 20µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate power dissipation Storage junction temperature range Operating junction temperature range March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions Quadrant VD=12V RL=30Ω VGT VGD IH (2) IL dV/dt VD=VDRM RL=3.3kΩ Tj = 125°C (dI/dt)c (2) T630 Unit 20 30 mA I-II-III MAX. I-II-III MAX. 1.3 V I-II-III MIN. 0.2 V IT= 100mA MAX. 35 50 mA I - III MAX. 50 70 mA II MAX. 60 80 mA VD=67% VDRM Gate open Tj = 125°C MIN. 300 500 V/µs Without snubber Tj = 125°C MIN. 3.3 4.5 A/ms IG = 1.2IGT (2) T620 STATIC CHARACTERISTICS Symbol VTM(2) Test Conditions MAX. 1.4 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd(2) Dynamic resistance Tj = 125°C MAX. 50 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 125°C MAX 5 1 µA mA VTO tp = 380µs Unit Tj = 25°C (2) ITM = 8.5 A Value Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 50 °C/W Rth(j-c) Junction to case for A.C (360° conduction angle) 3.4 °C/W PRODUCT SELECTOR 2/5 Part Number Voltage Sensitivity Type Package T620-600W 600V 20 mA Snubberless ISOWATT220AB T620-800W 800V 20 mA Snubberless ISOWATT220AB T630-600W 600V 30 mA Snubberless ISOWATT220AB T630-800W 800V 30 mA Snubberless ISOWATT220AB T820W / T830W ORDERING INFORMATION T 6 xx - x00 W PACKAGE: W: ISOWATT220AB TRIAC SERIES CURRENT: 6A VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 20: 20mA 30: 30mA OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode T620-600W T620600W 2.3 g 50 Tube T620-800W T620800W 2.3 g 50 Tube T630-600W T630600W 2.3 g 50 Tube T630-800W T630800W 2.3 g 50 Tube Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: RMS on-state current versus case temperature. P(W) IT(RMS)(A) 7 7 α=180° α=180° 6 6 5 5 4 4 3 3 2 2 180° α 1 α 1 Tc(°C) IT(RMS)(A) 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Fig. 3: Relative variation of thermal impedance versus pulse duration. 0 25 50 75 100 125 Fig. 4: On-state characteristics (maximum values). K=[Zth/Rth] ITM(A) 100 1.E+00 Tj=25°C Zth(j-c) Tj=125°C 1.E-01 Zth(j-a) 10 1.E-02 1 1.E-03 1.E-03 Tj max. : Vto = 0.85 V Rd = 50 mΩ VTM(V) tp(s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 1 2 3 4 5 6 3/5 T820W / T830W Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp