T635T-8FP

T635T-8FP 6 A Snubberless™ Triac Datasheet − production data Features A2 • Medium current Triac • High static and dynamic commutation G • Three quadrants A1 • ECOPACK®2 compliant component • Complies with UL standards (File ref: E81734) Applications • General purpose AC line load switching G A2 A1 • Motor control circuits • Small home appliances • Lighting TO-220FPAB (T635T-8FP) • Inrush current limiting circuits • Overvoltage crowbar protection Description Table 1. Device summary Symbol Value Unit IT(rms) 6 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 35 mA Available in through-hole full pack package, the T635T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 This is information on a product in full production. DocID024247 Rev 2 1/9 www.st.com 9 Characteristics 1 T635T-8FP Characteristics Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated) Symbol IT(rms) ITSM I ²t Parameter Unit A On-state rms current (full sine wave) Tc = 117 °C 6 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 20 ms 45 t = 16.7 ms 47 I²t value for fusing, Tj initial = 25 °C tp = 10 ms 13 Tj = 150 °C 600 Tj = 125 °C 800 tp = 10 ms 900 V 100 A/µs Tj = 150 °C 4 A Tj = 150 °C 1 W - 40 to + 150 - 40 to + 150 °C 260 °C 2 kV VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz IGM Peak gate current tp = 20 µs PG(AV) Value Average gate power dissipation A Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s Vins Insulation rms voltage, 1 minute A ²s V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated) Symbol Test conditions Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA I - III Max. 60 mA II Max. 65 mA 2000 V/µs 1000 V/µs I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C IL dV/dt (1) (dI/dt)c (1) IT = 500 mA IG = 1.2 IGT VD = 536 V, gate open Tj = 125 °C VD = 402 V, gate open Tj = 150 °C Without snubber (dV/dt)c ≥ 20 V/µs) 1. For both polarities of A2 referenced to A1 DocID024247 Rev 2 Unit 1.75 VD = 12 V, RL = 30 Ω (1) Value Min. IGT (1) IH 2/9 Quadrant Tj = 125 °C Tj = 150 °C mA Min. 6 Min. A/ms 3 T635T-8FP Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 8.5 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 °C Max. 75 mΩ 5 µA Tj = 25 °C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 °C VDRM = VRRM = 600 V 0.6 mA Tj = 150 °C Max. 2.0 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Unit Rth(j-c) Junction to case (AC) 4.5 °C/W Rth(j-a) Junction to ambient 60 °C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 8 Value Figure 2. On-state rms current versus case temperature (full cycle) P(W) 7 IT(RMS)(A) α =180° α =180 6 6 5 4 4 3 2 2 180° 1 IT(RMS)(A) TC(°C) 0 0 0 1 2 3 4 5 6 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] α = 180° Zth(j-c) 2.5 Zth(j-a) 2.0 1.0E-01 1.5 1.0 0.5 Ta(°C) 0.0 0 25 50 75 100 125 150 1.0E-02 1.0E-03 DocID024247 Rev 2 tp (s) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 3/9 Characteristics T635T-8FP Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 ITSM(A) 50 45 40 t = 20 ms 35 Tj max : Vto = 0.85 V Rd = 75 mW 10 Non repetitive Tj initial=25 °C 30 One cycle 25 20 15 Tj = 150 °C 10 Tj = 25 °C Number of cycles VTM(V) 0 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t 1000 Repetitive TC= 117 °C 5 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A), I²t (A²s) 2.0 Tj initial=25 °C 10 IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C] dI/dt limitation: 100 A/µs IGT Q1-Q2 IGT Q3 1.5 ITSM 100 VGT 1.0 0.5 Sinusoidal pulse with I²t 0.01 Tj(°C) tp(ms) width tp 5KV/µs 4 1.5 IL 3 IH 1.0 2 0.5 1 Tj(°C) T j(°C) 0.0 0 25 4/9 50 75 100 125 150 -50 DocID024247 Rev 2 -25 0 25 50 75 100 125 150 T635T-8FP Characteristics Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) 5 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values) (dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C] 8 Tj =150 °C 7 4 6 5 3 4 2 3 2 1 1 (dV/dt)c (V/µs) Tj(°C) 0 0 0.1 1.0 10.0 100.0 25 50 75 100 125 150 Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.0E+00 IDRM, IRRM @ [Tj; VDRM, VRRM] / IDRM, IRRM @ [Tjmax]* VDRM=VRRM=800 V 1.0E-01 VDRM=VRRM=600 V 1.0E-02 VDRM=VRRM=400 V 1.0E-03 *IDRM, IRRM @: [Tjmax = 125 °C; 800 V] [Tjmax = 150 °C; 600 V] Tj(°C) 1.0E-04 25 50 75 100 DocID024247 Rev 2 125 150 5/9 Package information 2 T635T-8FP Package information • Epoxy meets UL94, V0 • Lead-free package • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 14. TO-220FPAB dimension definitions A B H Dia L6 L2 L7 L3 L5 F1 L4 F2 F G1 G 6/9 D DocID024247 Rev 2 E T635T-8FP Package information Table 6. TO-220FPAB dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 DocID024247 Rev 2 7/9 Ordering information 3 T635T-8FP Ordering information Figure 15. Ordering information scheme T 6 35 T - 8 FP Triac Current 6=6A Gate sensitivity 35 = 35 mA Specific application T = Increased (dI/dt)c and dV/dt producing reduced ITSM Voltage (VDRM, VRRM) 8 = 800 V Package FP = TO-220FPAB Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode T635T-8FP T635T-8FP TO-220FPAB 2.0 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision Changes 05-Mar-2013 1 Initial release. 14-Jan-2015 2 Updated Features, Table 2 and Table 5. DocID024247 Rev 2 T635T-8FP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID024247 Rev 2 9/9