T635T-8T

T635T-8T Datasheet 6 A 800 V Snubberless Triac in TO-220AB package Features A2 • • • • G A1 Medium current Triac High static and dynamic commutation Three quadrants ECOPACK2 compliant Applications A2 G A2 A1 TO-220AB • • • • • • General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in through-hole package, the T635T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Product status link T635T-8T Product summary Order code T635T-8T Package TO-220AB IT(RMS) 6A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA DS9634 - Rev 4 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com T635T-8T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Value Unit Tc = 135 °C 6 A F = 50 Hz t = 20 ms 45 F = 60 Hz t = 16.7 ms 47 tp = 10 ms 13 Tj = 150 °C 600 Tj = 125 °C 800 Non repetitive surge peak off-state voltage tp = 10 ms 900 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs IGM Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature soldering during 10 s 260 °C IT(RMS) ITSM I2t Parameter On-state RMS current (full sine wave) Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) VDRM/VRRM Repetitive surge peak off-state voltage VDSM/VRSM PG(AV) Tstg tp = 20 µs Average gate power dissipation A A2s V Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Value Min. 1.75 Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA IGT(1) VD = 12 V, RL = 30 Ω I - II - III VGT VD = 12 V, RL = 30 Ω VGD VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C (1) IH IL dV/dt(1) (dI/dt)c(1) IT = 500 mA IG = 1.2 x IGT I - III II VD = 536 V, gate open Tj = 125 °C VD = 402 V, gate open Tj = 150 °C Without snubber (dV/dt)c > 20 V/μs Unit Tj = 125 °C Tj = 150 °C Max. Min. Min. 60 65 2000 1000 6 3 mA mA V/µs A/ms 1. For both polarities of A2 referenced to A1 DS9634 - Rev 4 page 2/11 T635T-8T Characteristics Table 3. Static characteristics Symbol VT(1) Test conditions Value Unit ITM = 8.5 A, tp = 380 µs Tj = 25 °C Max. 1.55 VTO Threshold voltage Tj = 150 °C Max. 0.85 Rd(1) Dynamic resistance Tj = 150 °C Max. 75 mΩ 5 µA (1) IDRM, IRRM Tj = 25 °C VD = VR = 800 V Tj = 125 °C VD = VR = 600 V Tj = 150 °C V Max. Max. 0.6 2.0 mA 1. For both polarities of A2 referenced to A1 Table 4. Thermal parameters Symbol DS9634 - Rev 4 Parameter Value Unit Rth(j-c) Junction to case (AC) 2.1 °C/W Rth(j-a) Junction to ambient 60 °C/W page 3/11 T635T-8T Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) 8 P(W) Figure 2. On-state RMS current versus case temperature (full cycle) IT(RMS) (A) 7 α=180 ° α =180 6 6 5 4 4 3 2 2 180° 1 TC (°C) IT(RMS)( A) 0 0 0 1 2 3 4 5 6 Figure 3. On-state RMS current versus ambient temperature (free air convection) 3.0 0 25 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 IT(RMS)(A) 50 K = [Zth / Rth] Zth(j-c) α = 180° 2.5 Zth(j-a) 2.0 1.0E-01 1.5 1.0 0.5 Ta(°C) 0.0 0 25 50 75 tp (s) 100 125 150 Figure 5. On-state characteristics (maximum values) 100 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Surge peak on-state current versus number of cycles ITM(A) 50 ITSM(A) 45 40 Tj max : VTO= 0.85 V Rd = 75 mΩ 10 t = 20 ms 35 Non repetitive Tj initial=25 °C 30 One cycle 25 20 Tj = 150 °C 15 Tj = 25 °C 10 VTM(V) 1 0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 Repetitive TC= 135 °C 5 4.0 1 DS9634 - Rev 4 Number of cycles 0 10 100 1000 page 4/11 T635T-8T Characteristics (curves) Figure 7. Non repetitive surge peak on-state current 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A) dI/dt limitation: 100 A/µs IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C ] 2.0 Tj initial = 25 °C IGT Q1-Q2 1.5 ITSM 100 IGT Q3 VGT 1.0 0.5 Sinusoidal pulse with t p( ms ) width tp 5 KV/µs 0 25 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) dV/dt [ T j ] / dV/dt [ T j =150 °C] 2.0 VD= VR = 402 V -25 IH, IL [T j ] / IH, IL [T j = 25 °C] 4 IH 1.5 3 IL 1.0 2 1 0.5 T j(°C) 0 25 50 75 100 125 150 Tj (°C) 0.0 -50 Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (typical values) 5 (dI/dt)c [( dV/dt)c] / speci fi ed (dI/d t)c -25 0 25 50 75 100 125 150 Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) 8 (dl/dt) c [Tj] / (dl/dt) c [Tj = 150 °C] Tj = 150 °C 7 4 6 5 3 4 2 3 2 1 1 (dV/dt)c (V/µs) 0 Tj (°C) 0 0.1 DS9634 - Rev 4 1 .0 10.0 100.0 25 50 75 100 125 150 page 5/11 T635T-8T Characteristics (curves) Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.0E+00 IDRM , IRRM @ [Tj ]; VDRM, VRRM] / IDRM , IRRM @ [Tjmax]* VDRM=VRRM=800 V 1.0E-01 VDRM=VRRM=600 V 1.0E-02 VDRM=VRRM=400 V 1.0E-03 *IDRM, IRRM @: [Tjmax = 125 °C; 800 V] [Tjmax = 150 °C; 600 V] Tj(°C) 1.0E-04 25 DS9634 - Rev 4 50 75 100 1 25 150 page 6/11 T635T-8T Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AB package information • • • Epoxy resin is halogen free and meets UL94 flammability standard, level V0 Lead-free plating package leads Recommended torque: 0.4 to 0.6 N·m Figure 14. TO-220AB package outline DS9634 - Rev 4 page 7/11 T635T-8T TO-220AB package information Table 5. TO-220AB package mechanical data Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS9634 - Rev 4 page 8/11 T635T-8T Ordering information 3 Ordering information Figure 15. Ordering information scheme T 6 35 T - 8 T Triac Current 6=6A Gate sensitivity 35 = 35 mA Specific application T = Increased (dl/dt)c and dV/dt producing reduced ITSM Voltage (V DRM, VRRM) 8 = 800 V Package T = TO-220AB Table 6. Ordering information DS9634 - Rev 4 Order code Marking Package Weight Base qty. Delivery mode T635T-8T T635T-8T TO-220AB 2.0 g 50 Tube page 9/11 T635T-8T Revision history Table 7. Document revision history DS9634 - Rev 4 Date Revision Changes 05-Aug-2013 1 Initial release. 01-Jul-2014 2 Updated Table 2. 28-Jul-2014 3 Updated Table 5. 09-Sep-2019 4 Updated Figure 14 and Table 5. page 10/11 T635T-8T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9634 - Rev 4 page 11/11