T810H

T810H High temperature 8 A sensitive TRIACs Features ■ ■ ■ ■ ■ A2 Medium current TRIAC Logic level sensitive TRIAC 150 °C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant packages A2 G A1 Applications ■ ■ A2 The T810H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through these sensitive gate TRIACs. A2 A1 G A2 A1 G D2PAK T810H-6G TO-220AB T810H-6T Description Specifically designed to operate at 150 °C, the new 8 A T810H TRIACs provide an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, they offer an IGT lower than 10 mA and specified minimal commutation and high noise immunity levels valid up to the Tj max. Table 1. Symbol IT(RMS) Device summary Value 8 600 10 Unit A V mA VDRM/VRRM IGT MAX May 2009 Doc ID 15714 Rev 1 1/10 www.st.com 10 Characteristics T810H 1 Table 2. Symbol IT(RMS) ITSM I²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj Characteristics Absolute maximum ratings Parameter On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range D2PAK, TO-220AB F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 150 °C Tc = 135 °C t = 16.7 ms t = 20 ms Value 8 84 A 80 42 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A ²s A/µs V A W °C Unit A Table 3. Symbol IGT VGT VGD IH (1) Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions VD = 12 V RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 100 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150 °C Logic level, 0.1 V/µs, Tj = 150 °C Logic level, 15 V/µs, Tj = 150 °C Quadrant I - II - III I - II - III I - II - III 0.15 25 30 mA II 75 11.4 A/ms 3.0 35 V/µs Min 1 Max. 10 1.0 Unit mA V V mA IL dV/dt (1) (dI/dt)c (1) 1. For both polarities of A2 referenced to A1. 2/10 Doc ID 15714 Rev 1 T810H Table 4. Symbol VT (1) Vt0 Rd (1) (1) Characteristics Static characteristics Test conditions ITM = 11.3 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 55.0 5 3.1 2.5 2.0 mA Unit V V mΩ µA IDRM IRRM VD/VR = 400 V (at peak mains voltage) Tj = 150 °C VD/VR = 200 V (at peak mains voltage) Tj = 150 °C 1. for both polarities of A2 referenced to A1. Table 5. Symbol Rth(j-c) Rth(j-a) Thermal resistance Parameter Junction to case (AC) S=1 Junction to ambient TO-220AB 60 cm2 D2PAK / TO-220AB D2PAK Value 1.60 45 °C/W Unit Figure 1. P(W) 10 9 8 7 6 5 4 3 2 1 0 0 1 Maximum power dissipation versus Figure 2. on-state rms current (full cycle) IT(RMS)(A) 10 9 8 7 6 5 4 3 2 IT(RMS)(A) 2 3 4 5 6 7 8 On-state rms current versus case temperature (full cycle) 1 0 0 25 50 TC(°C) 75 100 125 150 Doc ID 15714 Rev 1 3/10 Characteristics T810H Figure 3. On-state rms current versus ambient temperature (free air convection, full cycle) Figure 4. Relative variation of thermal impedance, versus pulse duration IT(RMS)(A) 3.0 2.5 2.0 1.5 1.0 0.5 Ta (°C) 0.0 0 25 50 75 100 125 150 K=[Zth/Rth] 1.E+00 Zth(j-c) 1.E-01 Zth(j-a) 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 5. Relative variation of gate trigger Figure 6. current and voltage versus junction temperature (typical values) 2.0 IGT Q3 Relative variation of holding and latching current versus junction temperature (typical values) IGT, VGT[T j] / IGT, VGT[T j=25 °C] 2.5 IH, IL [T j] / IH, IL [T j=25 °C] 2.0 IGT Q1- Q2 1.5 IH IL 1.5 1.0 1.0 VGT Q1- Q2 -Q3 0.5 0.5 Tj(°C) 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 Tj(°C) 50 75 100 125 150 Figure 7. Surge peak on-state current versus number of cycles Figure 8. Non-repetitive surge peak on-state current and corresponding value of I2t Tj initial=25 °C ITSM(A) 80 70 60 50 40 30 20 10 Number of cycles 0 1 10 100 1000 Repetitive TC=135 °C Non repetitive Tj initial=25 °C t=20ms ITSM (A), I²t (A²s) 1000 ITSM dI/dt limitation: 50 A/µs One cycle 100 I²t 10 Sinusoidal pulse width tp < 10 ms tP(ms) 1 0.01 0.10 1.00 10.00 4/10 Doc ID 15714 Rev 1 T810H Characteristics Figure 9. On-state characteristics (maximum Figure 10. Relative variation of critical rate of values) decrease of main current versus junction temperature (dI/dt)C [T j] / (dI/dt)c [T j=150 °C] 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 3 4 5 ITM (A) 100 Tj max Vto = 0.80 V Rd = 55 mΩ 10 Tj=150 °C Tj=25 °C VTM (V) 1 0 1 2 T j(°C) 25 50 75 100 125 150 Figure 11. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values) (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 4 Figure 12. Relative variation of static dV/dt immunity versus junction temperature dV/dt [T j] / dV/dt [T j=150 °C] 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VD=VR=400 V 3 2 1 (dV/dt)C (V/µs) 0 0.1 1.0 10.0 100.0 T j(°C) 25 50 75 100 125 150 Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal junction temperature for different resistance versus repetitive peak values of blocking voltage off-state voltage IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150°C; 600V] 1.0E+00 VDRM=VRRM=600 V Rth(c-a) (°C/W) 60 55 50 Rth(j-c)=1.6 °C/W TJ=150 °C 1.0E-01 VDRM=VRRM=400 V 45 40 35 1.0E-02 VDRM=VRRM=200 V 30 25 20 1.0E-03 15 10 T j(°C) 1.0E-04 25 50 75 100 125 150 5 0 200 300 VAC PEAK(V) 400 500 600 Doc ID 15714 Rev 1 5/10 Ordering information scheme T810H 2 Ordering information scheme Figure 15. Ordering information scheme T Triac series Current 8=8A Sensitivity 10 = 10 mA High temperature Voltage 6 = 600 V Package G = D2PAK T = TO-220AB Packing Blank = Tube (D2PAK, TO-220AB) -TR = Tape and reel (D2PAK) 8 10 H - 6 y -TR 6/10 Doc ID 15714 Rev 1 T810H Package information 3 Package information ● ● Epoxy meets UL94, V0 Recommended torque 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. D2PAK dimensions Dimensions Ref. Millimeters Min. A A E L2 Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037 Typ. Max. 4.60 2.69 0.23 0.93 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0° 1.40 A1 C2 A2 B D L L3 A1 B2 C C2 B2 B G A2 2mm min. FLAT ZONE C R 0.60 1.36 9.35 0.017 0.047 0.352 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 D E G L 10.28 0.393 5.28 0.192 15.85 0.590 1.40 1.75 0.050 0.055 V2 L2 L3 R V2 8° 0° 8° Figure 16. Footprint (dimensions in mm) 16.90 10.30 1.30 5.08 8.90 3.70 Doc ID 15714 Rev 1 7/10 Package information Table 7. TO-220AB dimensions Dimensions Ref. Millimeters Min. A a1 B ØI L F A I4 l3 a1 l2 c2 b2 C T810H Inches Min. Typ. Max. 0.625 0.147 Typ. Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.90 0.598 a2 B b1 b2 C c1 c2 14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 a2 e M b1 e c1 F ØI I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066 8/10 Doc ID 15714 Rev 1 T810H Ordering information 4 Ordering information Table 8. Ordering information Marking T810H 6G T810H 6G T810H 6T Package D2PAK D2 PAK Weight 1.5 g 1.5 g 2.3 g Base qty 50 1000 50 Delivery mode Tube Tape and reel Tube Order code T810H-6G T810H-6G-TR T810H-6T TO-220AB 5 Revision history Table 9. Date 15-May-2009 Document revision history Revision 1 First issue. Changes Doc ID 15714 Rev 1 9/10 T810H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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