T820-700W

® T820-xxxW T830-xxxW SNUBBERLESS TRIAC FEATURES s s s s s ITRMS = 8 A VDRM = VRRM = 600V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 A2 A1 G DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. G A1 A2 ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter Tc= 95°C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Parameter 600 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 600 Value 8 88 100 50 20 100 - 40 to + 150 - 40 to + 125 260 °C °C A2s A/µs Unit A A Symbol T820 / T830-xxxW 700 700 800 800 Unit V September 2001 - Ed: 1A 1/5 T820-xxxW / T830-xxxW THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360° conduction angle) Parameter Value 50 3.1 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG =500mA dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 4.5 A/ms (see note) Tj= 125°C Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T820 20 1.5 0.2 2 50 V µA mA V/µs V/µs T830 30 Unit mA V V µs IGM = 4 A (tp = 20 µs ITM= 11A tp= 380µs VDRM rated VRRM rated * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 4.5 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T820W / T830W triacs. 2/5 T820-xxxW / T830-xxxW Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 10 = 180 = 120 = 90 = 60 o o o o Tcase (oC) 10 -90 -95 8 6 4 2 o 8 -100 6 4 2 Rth = 0 o C/W o 2.5 C/W o 5 C/W 7.5 o C/W -105 -110 -115 = 30 I T(RMS) (A) 0 0 1 2 3 4 5 6 7 8 0 0 Tamb ( C) o -120 -125 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 3: RMS on-state current versus case temperature. Fig. 4: Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth 1 Zth(j-c) I T(RMS) (A) 10 8 = 180 o 0.1 Zth(j-a) 6 4 0.01 2 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 o tp(s) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Igt Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 100 Ih[Tj] Ih[Tj=25 o C] Tj initial = 25 C 80 o 60 Ih 40 20 Tj(oC) 0 20 40 60 80 100 120 140 0 1 Number of cycles 10 100 1000 3/5 T820-xxxW / T830-xxxW Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ® 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig. 8: On-state characteristics (maximum values). I TM (A) Tj initial = 25 C o 1000 I TSM 1000 Tj initial o 25 C 100 100 I2 t 10 Tj max 10 1 tp(ms) Tj max Vto =0.9V Rt =0.048 VTM (V) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 4/5 T820-xxxW / T830-xxxW PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 15.90 9.00 3.00 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 16.40 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 1.125 0.386 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.646 0.366 0.126 16.00 typ. 0.630 typ. s s s s s Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. 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