0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
T830W

T830W

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    T830W - 8A SNUBBERLESSTM TRIAC - STMicroelectronics

  • 数据手册
  • 价格&库存
T830W 数据手册
® T820W T830W 8A SNUBBERLESS™ TRIAC MAIN FEATURES Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 and 800 20 to 30 Unit A V mA G A2 A1 DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as washing-machines drum motor controllers. They comply with UL standards (ref. E81734). A1 A2 G ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM It dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj 2 Parameter RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 2 Value Tc= 100°C F = 50Hz F = 60Hz F = 120 Hz tp = 10ms tp = 20µs t = 20ms t = 16.7ms Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 8 100 105 55 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 125 Unit A A A2s A/µs V A W °C tp = 10 ms March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions VD=12V RL=33Ω VD=VDRM RL=3.3kΩ Tj = 125°C IT= 250mA IG = 1.2IGT Quadrant I-II-III I-II-III I-II-III MAX. MAX. MIN. MAX. I - III II MAX. MAX. MIN. MIN. T820 20 1.3 0.2 35 50 60 300 4.5 T830 30 Unit mA V V VGT VGD IH (2) 50 70 80 500 5.5 mA mA mA V/µs A/ms IL (2) dV/dt VD=67% VDRM Gate open Tj = 125°C Without snubber Tj = 125°C (dI/dt)c (2) STATIC CHARACTERISTICS Symbol VTM(2) VTO (2) Test Conditions ITM = 11A tp = 380µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX Value 1.4 0.85 40 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM Rd(2) IDRM IRRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case (AC) Parameter Value 60 3.1 Unit °C/W °C/W PRODUCT SELECTOR Part Number T820-600W T820-800W T830-600W T830-800W Voltage 600V 800V 600V 800V Sensitivity 20 mA 20 mA 30 mA 30 mA Type Snubberless Snubberless Snubberless Snubberless Package ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB 2/5 T820W / T830W ORDERING INFORMATION T TRIAC SERIES CURRENT: 8A 8 xx - x00 W PACKAGE: W: ISOWATT220AB VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 20: 20mA 30: 30mA OTHER INFORMATION Part Number T820-600W T820-800W T830-600W T830-800W Marking T820600W T820800W T830600W T830800W Weight 2.3 g 2.3 g 2.3 g 2.3 g Base quantity 50 50 50 50 Packing mode Tube Tube Tube Tube Fig. 1: Maximum power dissipation versus RMS on-state current. P(W) 9 α=180° Fig. 2: RMS on-state current versus case temperature. IT(RMS)(A) 10 9 8 7 6 α=180° 8 7 6 5 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 180° 4 3 α IT(RMS)(A) α 2 1 0 0 25 50 75 100 125 Tc(°C) Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1.E+00 Zth(j-c) Fig. 4: On-state characteristics (maximum values). ITM(A) 100 Tj=25°C Tj=125°C 1.E-01 Zth(j-a) 10 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 0 1 2 VTM(V) 3 4 Tj max. : Vto = 0.85 V Rd = 40 mΩ 5 6 3/5 T820W / T830W Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1000 Repetitive Tc=100°C Non repetitive Tj initial=25°C t=20ms Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp
T830W 价格&库存

很抱歉,暂时无法提供与“T830W”相匹配的价格&库存,您可以联系我们找货

免费人工找货