T835-600G

® T835-600G T850-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION PREFORMANCES SNUBBERLESSTM TECHNOLOGY HIGH NOISE IMMUNITY (dV/dt) HIGH ITSM A2 A2 G DESCRIPTION The T835-600G and T850-600G triacs are using high performance SNUBBERLESS technology. They are intended for AC control applications using surface mount tecnology. These devices are perfectly suited where high commutation and surge performances are required. A1 D2PAK ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltage RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I t Value for fusing Critical rate of rise of on-state current IG = 500 mA Tstg Tj T dIG /dt = 1 A/µs. 2 Value Tj = 125°C Tc= 110°C tp = 8.3ms tp = 10 ms 600 8 85 80 32 20 100 - 40, + 150 - 40, + 125 260 Unit V A A It dI/dt 2 tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s °C °C May 1998 - Ed: 3A 1/5 T835-600G / T850-600G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambient (S = 1 cm2) Junction to case for DC Junction to case for AC 360° conduction angle (F=50Hz) Value 45 2.1 1.6 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω Tj= 25°C Quadrant I-II-III MIN MAX VGT VGD IH * IL VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IT= 100mA IG = 1.2 IGT Gate open Tj= 25°C Tj= 125°C Tj= 25°C Tj = 25°C I-III II VTM * IDRM IRRM dV/dt * (dI/dt)c * ITM= 11A tp= 380µs VD = VDRM VR = VRRM Linear slope up to VD=67%VDRM Gate open Without snubber Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Tj= 125°C I-II-III I-II-III MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN 500 4.5 35 50 80 1.5 5 2 1000 7 35 1.3 0.2 50 60 100 V µA mA V/µs A/ms T835 2 50 V V mA mA T850 Unit mA IGM = 4 A (tp = 20 µs) * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment T TRIAC CURRENT 8 35 - 600 SENSITIVITY G PACKAGE : G = D2PAK VOLTAGE 2/5 T835-600G / T850-600G Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) 12 α=180° α=120° α=90° a=60° Rth=5°C/W Rth=2°C/W P(W) 12 10 8 6 4 2 0 0 α=30° Tcase (°C) Rth=0°C/W 10 8 6 4 2 Rth=8°C/W 110 115 120 α=180° IT(RMS)(A) 1 2 3 4 5 6 7 8 0 0 Tamb(°C) 40 60 80 100 120 140 125 20 Fig. 3: RMS on-state current versus case temperature. Fig. 4 : Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) 10 α=180° K=[Zth/Rth] 1.00 Zth(j-c) 8 6 0.10 Zth(j-a) 4 2 Tcase(°C) 0 0 25 50 75 100 125 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.5 2.0 1.5 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH IGT Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITS M(A) 80 70 60 50 40 30 20 10 0 1 Number of cycles 10 100 1000 3/5 Tj initial=25°C F=50Hz T835-600G / T850-600G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp