T835-XXXB

® T810-xxxB T835-xxxB HIGH PERFORMANCE TRIACS FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay). A2 A1 DPAK (Plastic) G ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM 2 Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/µs 2 Value Tc =110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/µs It dI/dt Tstg Tj T Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s °C °C °C Symbol Parameter T810-/T835400B 600B 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V May 1998 Ed : 1A 1/5 T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2) Parameter Value 2.1 1.6 70 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C Quadrant T810 IGT VGT VGD IL IH * VTM * IDRM IRRM dV/dt * VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IG=1.2 IGT IT= 100mA gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open I-II-III I-II-III I-II-III I-II-III MAX MAX MIN MAX MAX MAX MAX MAX MIN 50 25 15 1.5 10 2 500 10 1.3 0.2 60 35 Suffix T835 35 mA V V mA mA V µA mA V/µs Unit (dI/dt)c * (dV/dt)c = 0.1V/µs (dV/dt)c = 15V/µs Tj=125°C Tj=125°C MIN MIN 5.4 2.7 9 4.5 A/ms A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment T 8 10 - 600 TRIAC VOLTAGE B CURRENT SENSITIVITY PACKAGE B = DPAK 2/5 T810-xxxB / T835-xxxB Fig 1a: Maximum power dissipation versus RMS on-state current (T810 only). 10 8 6 4 2 0 0 α α 180° Fig 1b: Maximum power dissipation versus RMS on-state current. (T835 only) 10 P(W) α P(W) α α α 8 6 4 2 α α α α α α 180° α α IT(RMS)(A) 1 2 3 4 5 6 7 8 0 0 1 2 3 IT(RMS)(A) 4 5 6 7 8 Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. Fig 3: RMS on-state current versus ambient temperature. 10 8 6 P(W) Rth=10 °C/W Rth=5°C/W Tcase (°C) 110 Rth=0°C/W IT(RMS)(A) 9 8 7 6 5 4 3 2 1 0 115 Rth=15 °C/W α 4 120 2 0 0 α Tamb(°C) 25 50 75 100 125 125 Tamb(°C) 0 25 50 75 100 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 2.5 2.0 IGT,IH[Tj]/IGT,IH[Tj=25°C] K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 1.5 1.0 0.2 IGT IH 0.5 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 3/5 T810-xxxB / T835-xxxB Fig 6: Non repetitive surge peak on-state current versus number of cycles. Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp