T835H-6I

T835H, T850H Snubberless™ High temperature 8 A Triacs Main characteristics Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 35 or 50 Unit G A2 A1 A2 A2 A V mA A2 A1 G G A2 A1 Features ■ ■ ■ ■ ■ Medium current Triac 150° C max. Tj turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant D2PAK T8xxH-6G TO-220AB T8xxH-6T Applications A1 G A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 8 A triacs provide a very high switching capability up to junction temperatures of 150° C. The heatsink can be reduced, compared to traditional triacs, according to the high performance at given junction temperatures. TO-220AB Insulated T8xxH-6I Order codes Part Numbers T835H-6G T850H-6G T835H-6G-TR T850H-6G-TR T835H-6T T850H-6T T835H-6I T850H-6I Marking T835H 6G T850H 6G T835H 6G T850H 6G T835H 6T T850H 6T T835H 6I T850H 6I Description Available in through-hole or surface mount packages, the T835H and T850H triac series are suitable for general purpose mains power AC switching. TM: Snubberless is a trademark of STMicroelectronics April 2007 Rev 1 1/10 www.st.com 10 Characteristics T835H, T850H 1 Table 1. Symbol IT(RMS) Characteristics Absolute Maximum Ratings Parameter D2PAK, TO-220AB RMS on-state current (full sine wave) TO-220AB Ins Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs Tj = 150° C Tj = 25° C Tj = 150° C Tj = 150° C Tc = 135° C Tc = 125° C t = 20 ms t = 16.7 ms 80 A 84 42 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A²s A/µs V A W °C Value 8 Unit A ITSM I ²t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj Table 2. Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) Electrical Characteristics (Tj = 25° C, unless otherwise specified) Value Test Conditions Quadrant T835H VD = 12 V RL = 33 Ω VD = VDRM, RL = 3.3 kΩ IT = 500 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150° C Without snubber, Tj = 150° C MAX. II MIN. MIN. 80 1000 11 110 1500 14 V/µs A/ms I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. 35 50 35 1.0 0.15 75 60 mA T850H 50 mA V V mA Unit 1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1. 2/10 T835H, T850H Table 3. Symbol VT (1) Vt0 Rd (1) (1) Characteristics Static Characteristics Test Conditions ITM = 11 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25° C Tj = 150° C Tj = 150° C Tj = 25° C Tj = 150° C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 52 5 3.1 2.5 2.0 mA Unit V V mΩ µA IDRM IRRM (2) VD/VR = 400 V (at peak mains voltage) Tj = 150° C VD/VR = 200 V (at peak mains voltage) Tj = 150° C 1. for both polarities of A2 referenced to A1. 2. tp = 380 µs. Table 4. Symbol Rth(j-c) Thermal resistance Parameter D2PAK / TO-220AB Junction to case (AC) TO-220AB Ins S=1 cm2 D2PAK TO-220AB / TO-220AB Ins Junction to ambient 60 3.7 ° C/W 45 Value 1.85 Unit Rth(j-a) Figure 1. P(W) 10 9 8 7 6 α=180 ° Maximum power dissipation versus Figure 2. RMS on-state current (full cycle) IT(RMS) (A) 9 RMS on-state current versus case temperature (full cycle) TO-220AB/D²PAK 8 7 6 5 TO-220AB Insulated 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 IT(RMS)(A) 180° 4 3 2 1 0 0 25 50 75 100 125 150 TC(°C) 3/10 Characteristics T835H, T850H Figure 3. RMS on-state current versus ambient temperature (Epoxy printed circuit board FR4, copper thickness = 35 µm) α=180 ° D²PAK SCU=1 cm² Figure 4. Variation of thermal impedance versus pulse duration 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IT(RMS) (A) 1.0E+02 Zth(°C/W) Zth(j-a) 1.0E+01 Zth(j-c) 1.0E+00 Tamb(°C) 0.0 0 25 50 75 100 125 150 1.0E-01 1.0E-03 tP(s) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 5. ITM(A) On-state characteristics (maximum Figure 6. values) 90 80 70 60 Tj=150 °C Surge peak on-state current versus number of cycles 100 ITSM (A) t=20ms Non repetitive Tj initial=25 °C One cycle 50 Tj=25 °C 10 40 30 Tj max. : Vt0 = 0.80 V Rd = 52 mΩ Repetitive Tc=125 °C 20 10 Number of cycles 0 4.5 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 Figure 7. Non-repetitive surge peak on-state Figure 8. current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t 2.5 Tj initial=25 °C Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) 10000 ITSM(A), I²t (A²s) IGT, IH, IL [T j] / IGT, IH, IL [T j=25°C] dI/dt limitation: 50 A/µs 2.0 IGT 1000 1.5 ITSM IH & IL 1.0 100 I²t 0.5 tP(ms) 10 0.01 0.0 0.10 1.00 10.00 Tj(°C) -40 -20 0 20 40 60 80 100 120 140 160 4/10 T835H, T850H Characteristics Figure 9. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [T j] / (dI/dt)c [T j=150°C] 8 7 6 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 (dI/dt)c [ (dV/dt) c ] / Specified (dI/dt) c 5 4 3 2 0.4 0.2 0.0 0.1 1.0 (dV/dt)C (V/µs) 10.0 100.0 1 T j(°C) 0 25 50 75 100 125 150 Figure 11. Leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 12. Variation of thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness = 35 µm) Rth(j-a) (°C/W) 80 D²PAK 1.0E+04 IDRM/IRRM(µA) 1.0E+03 VDRM=VRRM=600 V 70 60 1.0E+02 VDRM=VRRM=400 V VDRM=VRRM=200 V 50 40 30 20 1.0E+01 1.0E+00 1.0E-01 10 1.0E-02 25 50 75 T j(°C) 100 125 150 SCU(cm²) 0 0 5 10 15 20 25 30 35 40 5/10 Ordering information T835H, T850H 2 Ordering information T Triac series Current 8=8A Sensitivity 35 = 35 mA 50 = 50 mA High temperature Voltage 6 = 600 V Package G = D2PAK T = TO-220AB I = TO-220AB Ins Packing Blank = Tube (D2PAK, TO-220AB) -TR = Tape and reel (D2PAK) 8 xx H - 6 y -TR 6/10 T835H, T850H Package mechanical data 3 Package mechanical data ● ● Epoxy meets UL94, V0 Recommended torque 0.4 to 0.6 Nm D2PAK dimensions Dimensions Ref. Millimeters Min. A A E L2 C2 Table 5. Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037 Typ. Max. 4.60 2.69 0.23 0.93 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0° 1.40 A1 A2 B D L L3 A1 B2 C C2 0.60 1.36 9.35 0.017 0.047 0.352 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 B2 B G C R D E 10.28 0.393 5.28 0.192 A2 2mm min. FLAT ZONE G L V2 15.85 0.590 1.40 1.75 0.050 0.055 L2 L3 R V2 8° 0° 8° Figure 13. Footprint (dimensions in mm) 16.90 10.30 1.30 5.08 8.90 3.70 7/10 Package mechanical data Table 6. TO-220AB and TO-220AB Ins dimensions T835H, T850H Dimensions Ref. Millimeters Min. A a1 B ØI L F A I4 l3 a1 l2 c2 b2 C Inches Min. Typ. Max. 0.625 0.147 Typ. Max. 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.90 0.598 a2 B b1 b2 C c1 c2 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 a2 e M F c1 b1 e ØI I4 L l2 l3 M 15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 0.104 1.70 0.044 1.70 0.044 0.102 0.116 0.066 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 T835H, T850H Ordering Information 4 Ordering Information Ordering type T8xxH-6G T8xxH-6G-TR T8xxH-6T T8xxH-6I Marking T8xxH 6G T8xxH 6G T8xxH 6T T8xxH 6I Package D2PAK D PAK TO-220AB TO-220AB Ins 2 Weight 1.5 g 1.5 g 2.3 g 2.3 g Base qty 50 1000 50 50 Delivery mode Tube Tape and reel Tube Tube 5 Revision history Date 17-Apr-2007 Revision 1 First issue Description of Changes 9/10 T835H, T850H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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