T835H-6T

T835H, T850H High temperature 8 A Snubberless™ Triacs Datasheet - production data Applications A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 8 A Triacs provide a very high switching capability up to 150 °C junction temperatures. G A1 A2 The heatsink can be reduced, compared to traditional Triac, according to the high performance at given junction temperatures. A2 A1 G TO-220AB A2 A1 G TO-220AB Ins. A2 Description Available in through-hole or surface mount packages, these Triacs series are suitable for general purpose mains power ac switching. By using an internal ceramic pad, they provide voltage insulation (rated at 2500 VRMS). D²PAK A2 G A1 Table 1: Device summary Features       Symbol Value Unit IT(RMS) 8 A VDRM/VRRM 600 V IGT 35 or 50 mA Medium current Triac 150 °C max. Tj turn-off commutation Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) February 2018 DocID13564 Rev 4 This is information on a product in full production. 1/13 www.st.com Characteristics 1 T835H, T850H Characteristics Table 2: Absolute ratings (limiting values) Symbol IT(RMS) ITSM I²t Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) Value Unit 8 A D²PAK, TO-220AB TC = 133 °C TO-220A Ins. TC = 116 °C f = 50 Hz tp = 20 ms 80 f = 60 Hz tp = 16.7 ms 84 tp = 10 ms 42 A²s I²t value for fusing A Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz Tj = 150 °C 50 A/µs VDSM / VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V IGM Peak forward gate current tp = 20 µs Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Operating junction temperature range -40 to +150 °C dl/dt PG(AV) Tstg Tj Average gate power dissipation Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Value Symbol IGT(1) Test Conditions VD = 12 V, RL = 33 Ω I - II - III Max. T835H T850H 35 50 VGT VGD VD = VDRM, RL = 3.3 kΩ IH(2) IT = 500 mA IL dV/dt(2) (dI/dt)c(2) I - II - III II (2)for 2/13 Max. mA 1.0 mA 0.15 V 35 75 50 60 80 110 mA mA VD = 2/3 x VDRM, gate open Tj = 150 °C Min. 1000 1500 V/µs Without snubber Tj = 150 °C Min. 11 14 A/ms Notes: (1)minimum Min. Max. I - III IG = 1.2 x IGT Unit Quadrant IGT is guaranted at 20% of IGT max. both polarities of A2 referenced to A1. DocID13564 Rev 4 T835H, T850H Characteristics Table 4: Static characteristics Symbol Test conditions Value Unit Max. 1.5 V Tj = 150 °C Max. 0.80 V Tj = 150 °C Max. 52 mΩ Tj = 25 °C Max. 5 µA Tj = 150 °C Max. 3.1 VD/VR = 400 V (at peak mains voltage) Tj = 150 °C Max. 2.5 VD/VR = 200 V (at peak mains voltage) Tj = 150 °C Max. 2.0 VT(1) ITM = 11 A, tp = 380 μs Vt0(1) Threshold voltage Rd (1) Tj = 25 °C Dynamic resistance VDRM = VRRM IDRM / IRRM mA Notes: (1)for both polarities of A2 referenced to A1 Table 5: Thermal parameters Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient (Scu = 1 cm2, D²PAK) Junction to ambient DocID13564 Rev 4 Value D²PAK, TO-220AB 1.85 TO-220AB Ins. 3.7 D²PAK 45 TO-220AB, TO-220AB Ins. 60 Unit °C/W 3/13 Characteristics 1.1 T835H, T850H Characteristics (curves) Figure 2: On-state RMS current versus case temperature (full cycle) Figure 1: Maximum power dissipation versus onstate RMS current (full cycle) P(W) 10 9 TO-220AB/D²PAK α=180 ° 9 IT(RMS)(A) 8 8 TO-220AB Insulated 7 7 6 6 5 5 4 4 3 3 2 2 180° 1 1 IT(RMS)(A) α=180 ° TC (°C) 0 0 0 1 2 3 4 5 6 7 0 8 Figure 3: On-state RMS current versus ambient temperature 4.5 1,0E+00 75 100 125 150 Z th(°C/W) α=180 ° D²PAK SCU =1 cm² Epoxy printed circuit board FR4, copper thickness = 35 µm 50 Figure 4: Variation of thermal impedance versus pulse duration IT(RMS)(A) 4.0 25 Zth(j-c) 3.5 1,0E-01 3.0 2.5 Zth(j-a) 2.0 1.5 1,0E-02 1.0 0.5 t P(s) Tamb (°C) 0.0 0 25 50 75 100 125 150 1,0E-03 1,0E-03 Figure 5: On-state characteristics (maximum values) 100 1,0E-02 1,0E-01 1,0E+00 1,0E+01 1,0E+02 1,0E+03 Figure 6: Surge peak on-state current versus number of cycles ITM(A) 90 ITSM (A) 80 70 t=20ms Non repetitive Tj initial = 25 °C 60 One cycle 50 Tj = 150 °C 10 40 Tj= 25°C Repetitive Tc =116 °C 30 20 Tj max. : Vt0 = 0.80 V Rd = 52 mΩ VTM(V) 10 Number of cycles 0 1 1 0.0 4/13 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 DocID13564 Rev 4 10 100 1000 T835H, T850H Characteristics Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse Figure 8: Relative variation of IGT,IH, IL vs junction temperature (typical values) Figure 9: Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c Figure 10: Relative variation of critical rate of decrease of main current versus junction temperature 2.0 (dl/dt)c[(dV/dt)c] / specified (dl/dt)c 8 (dl/dt)c[(Tj] / (dl/dt)c [Tj = 150 °C] typical values 1.8 7 1.6 6 1.4 1.2 5 1.0 4 0.8 3 0.6 2 0.4 1 0.2 0.0 0.1 (dV/dt) C (V/µs) 1.0 Tj (°C) 0 10.0 100.0 Figure 11: Leakage current versus junction temperature for different values of blocking voltage (typical values) 25 50 75 100 125 150 Figure 12: Variation of thermal resistance junction to ambient versus copper surface under tab 80 Rth(j-a) (°C/W) D²PAK 70 60 50 40 30 20 10 SCU(cm²) 0 0 DocID13564 Rev 4 5 10 15 20 25 30 35 5/13 40 Package information 2 T835H, T850H Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Epoxy meets UL94, V0 Lead-free package leads Cooling method: by conduction (C) D²PAK package information Figure 13: D²PAK package outline 6/13 DocID13564 Rev 4 Package information T835H, T850H Table 6: D²PAK package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.0098 0.25 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 R V2 0.1 0.40 0° 0.0689 0.0157 8° 0° 8° Notes: (1)Dimensions in inches are given for reference only DocID13564 Rev 4 7/13 Package information T835H, T850H Figure 14: D²PAK recommended footprint (dimensions are in mm) 8/13 DocID13564 Rev 4 Package information T835H, T850H 2.2 TO-220AB Insulated package information Figure 15: TO-220AB Insulated package outline DocID13564 Rev 4 9/13 Package information T835H, T850H Table 7: TO-220AB Insulated package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 Notes: (1)Inch 10/13 Typ. dimensions are for reference only. DocID13564 Rev 4 0.6457 0.1024 0.6614 Ordering information T835H, T850H 3 Ordering information Figure 16: Ordering information scheme T 8 xx H - 6 y -TR Triac series Current 8=8A Sensitivity 35 = 35 mA 50 = 50 mA High temperature Voltage 6 = 600 V Package G = D²PAK T = TO-220AB I = TO-220AB Ins Packing Blank = Tube (D²PAK, TO-220AB) -TR = Tape and reel (D²PAK) Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode T8xxH-6G T8xxH 6G D²PAK 1.5 g 50 Tube T8xxH-6G-TR T8xxH 6G D²PAK 1.5 g 1000 Tape and reel T8xxH-6T T8xxH 6T TO-220AB 2.3 g 50 Tube T8xxH-6I T8xxH 6I TO-220AB Ins. 2.3 g 50 Tube DocID13564 Rev 4 11/13 Revision history 4 T835H, T850H Revision history Table 9: Document revision history 12/13 Date Revision Changes 17-Apr-2007 1 First issue. 19-Sep-2011 2 Updated: Features, Description, Figure 2, Table 2 and 4. 30-Mar-2017 3 Minor text changes. Updated Table 4: "Static characteristics" and Figure 7: "Non-repetitive surge peak on-state current for a sinusoidal pulse". 07-Feb-2018 4 Updated Table 2: "Absolute ratings (limiting values)", Figure 2: "On-state RMS current versus case temperature (full cycle)" and Figure 6: "Surge peak on-state current versus number of cycles". DocID13564 Rev 4 T835H, T850H IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DocID13564 Rev 4 13/13