T835T-8FP
8 A Snubberless™ Triac
Datasheet − production data
Features
A2
• Medium current Triac
• High static and dynamic commutation
G
• Three quadrants
A1
• ECOPACK®2 compliant component
• Complies with UL standards (File ref: E81734)
Applications
• General purpose AC line load switching
G
A2
A1
• Motor control circuits
• Small home appliances
• Lighting
• Inrush current limiting circuits
TO-220FPAB
(T835T-8FP)
• Overvoltage crowbar protection
Description
Table 1. Device summary
Symbol
Value
Unit
IT(rms)
8
A
VDRM, VRRM
800
V
VDSM, VRSM
900
V
IGT
35
mA
Available in through-hole full pack package, the
T835T-8FP Triac can be used for the on/off or
phase angle control function in general purpose
AC switching where high commutation capability
is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected
Provides UL certified insulation rated at 2 kV.
TM: Snubberless is a trademark of STMicroelectronics
January 2015
This is information on a product in full production.
DocID024248 Rev 2
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www.st.com
9
Characteristics
1
T835T-8FP
Characteristics
Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
IT(rms)
ITSM
I ²t
Parameter
Unit
A
On-state rms current (full sine wave)
Tc = 113°C
8
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25 °C) F = 60 Hz
t = 20 ms
60
t = 16.7 ms
63
I²t value for fusing, Tj initial = 25 °C
tp = 10 ms
24
Tj = 150 °C
600
Tj = 125 °C
800
tp = 10 ms
900
V
100
A/µs
Tj = 150 °C
4
A
Tj = 150 °C
1
W
- 40 to + 150
- 40 to + 150
°C
260
°C
2
kV
VDRM,
VRRM
Repetitive surge peak off-state voltage
VDSM,
VRSM
Non repetitive surge peak off-state voltage
dI/dt
Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns
F = 100 Hz
IGM
Peak gate current
tp = 20 µs
PG(AV)
Value
Average gate power dissipation
A
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
TL
Maximum lead temperature for soldering during 10 s
Vins
Insulation rms voltage, 1 minute
A ²s
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol
Test conditions
Max.
35
I - II - III
Max.
1.3
V
I - II - III
Min.
0.2
V
Max.
40
mA
I - III
Max.
60
mA
II
Max.
65
mA
2000
V/µs
1000
V/µs
I - II - III
VGT
VD = 12 V, RL = 30 Ω
VGD
VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C
IL
dV/dt (1)
(dI/dt)c (1)
IT = 500 mA
IG = 1.2 IGT
VD = 536 V, gate open
Tj = 125 °C
VD = 402 V, gate open
Tj = 150 °C
Without snubber (dV/dt)c ≥ 20 V/µs)
1. For both polarities of A2 referenced to A1
DocID024248 Rev 2
Unit
1.75
VD = 12 V, RL = 30 Ω
(1)
Value
Min.
IGT (1)
IH
2/9
Quadrant
mA
Min.
Tj = 125 °C
Tj = 150 °C
8
Min.
A/ms
4
T835T-8FP
Characteristics
Table 4. Static Characteristics
Symbol
Test conditions
VT (1)
Value
Unit
ITM = 11.3 A, tp = 380 µs
Tj = 25 °C
Max.
1.55
V
Vt0
(1)
Threshold voltage
Tj = 150 °C
Max.
0.85
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
Max.
57
mΩ
5
µA
Tj = 25 °C
VDRM = VRRM = 800 V
IDRM
IRRM
Max.
Tj = 125 °C
VDRM = VRRM = 600 V
0.8
mA
Tj = 150 °C
Max.
2.4
1. For both polarities of A2 referenced to A1
Table 5. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
3.8
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
10
9
α =180 °
IT(RMS)(A)
α =180°
8
8
7
6
6
5
4
4
3
2
180°
2
1
IT(RMS)(A)
0
1
2
3
4
5
6
7
8
Figure 3. On-state rms current versus ambient
temperature (free air convection)
3.0
TC(°C)
0
0
IT(RMS)(A)
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance versus pulse duration
1.0E+00
K = [Zth / Rth]
α = 180°
2.5
Zth(j-c)
Zth(j-a)
2.0
1.0E-01
1.5
1.0
0.5
Ta(°C)
0.0
0
25
50
75
100
125
150
1.0E-02
1.0E-03
DocID024248 Rev 2
tp (s)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
3/9
Characteristics
T835T-8FP
Figure 5. On-state characteristics (maximum
values)
ITM(A)
100
Figure 6. Surge peak on-state current versus
number of cycles
ITSM(A)
70
60
t = 20 ms
50
Tj max :
Vto = 0.85 V
Rd = 57 mW
.
Non repetitive
Tj initial=25 °C
40
One cycle
10
30
Tj = 150 °C
20
Tj = 25 °C
VTM(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C]
IGT Q1-Q2
IGT Q3
1.5
VGT
1.0
0.5
tp(ms)
Sinusoidal pulse with width tp 5KV/µs
4
IL
1.5
IH
3
1.0
2
0.5
1
Tj(°C)
T j(°C)
0.0
0
25
4/9
50
75
100
125
150
-50
DocID024248 Rev 2
-25
0
25
50
75
100
125
150
T835T-8FP
Characteristics
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c versus
reapplied (dV/dt)c (typical values)
6
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
Figure 12. Relative variation of critical rate of
decrease of main current (di/dt)c versus
junction temperature (typical values)
(dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]
8
Tj =150 °C
7
5
6
4
5
3
4
3
2
2
1
1
(dV/dt)c (V/µs)
Tj(°C)
0
0
0.1
1.0
10.0
100.0
25
50
75
100
125
150
Figure 13. Relative variation of leakage current versus junction temperature for
different values of blocking voltage (typical values)
1.0E+00
IDRM, IRRM @ [Tj; VDRM, VRRM] / IDRM, IRRM @ [Tjmax]*
VDRM=VRRM=800 V
1.0E-01
VDRM=VRRM=600 V
1.0E-02
VDRM=VRRM=400 V
1.0E-03
*IDRM, IRRM @:
[Tjmax = 125 °C; 800 V]
[Tjmax = 150 °C; 600 V]
Tj(°C)
1.0E-04
25
50
75
100
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125
150
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Package information
2
T835T-8FP
Package information
•
Epoxy meets UL94, V0
•
Lead-free package
•
Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 14. TO-220FPAB dimension definitions
A
B
H
Dia
L6
L2
L7
L3
L5
F1
L4
F2
F
G1
G
6/9
D
DocID024248 Rev 2
E
T835T-8FP
Package information
Table 6. TO-220FPAB dimension values
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
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Ordering information
3
T835T-8FP
Ordering information
Figure 15. Ordering information scheme
T
8
35
T -
8
FP
Triac
Current
8=8A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dI/dt)c and dV/dt producing reduced ITSM
Voltage (VDRM, VRRM)
8 = 800 V
Package
FP = TO-220FPAB
Table 7. Ordering information
4
Order code
Marking
Package
Weight
Base qty
Delivery mode
T835T-8FP
T835T-8FP
TO-220FPAB
2.0 g
50
Tube
Revision history
Table 8. Document revision history
8/9
Date
Revision
Changes
05-Mar-2013
1
Initial release.
14-Jan-2015
2
Updated Features, Table 2 and Table 5.
DocID024248 Rev 2
T835T-8FP
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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