TCC3100

SD1456 (TCC3100) RF & MICROWAVE TRANSISTORS T V/LINEAR APPLICATIONS . . . . . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION P OUT = 100 W MIN. WITH 11.0 dB GAIN .400 x .425 8LFL (M168) epoxy sealed ORDER CODE SD1456 BRANDING TCC3100 PIN CONNECTION DESCRIPTION The SD1456 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 33 3.5 16 150 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1.2 °C/W 1/5 SD1456 (TCC3100) E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCER BVCEO BVEBO hFE IC = 50mA IC = 50mA IC = 50mA IE = 5mA VCE = 5V IE = 0mA RBE = 15Ω IB = 0mA IC = 0mA IC = 500mA 65 60 33 3.5 20 — — — — — — — — — 150 V V V V — DYNAMIC (Class AB) Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB f = 225 MHz POUT = 100 W POUT = 100 W f = 1 MHz VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V IC = 2 x 100 mA IC = 2 x 100 mA IC = 2 x 100 mA 100 11 70 — — — — 60 — — — — W dB % pF DYNAMIC (Class A) Symbol Test Conditions Value Min. Typ. Max. Unit POUT * G P* IMD3* Note: f = 225 MHz PIN = 1.1 W PIN = 1.1 W VCE = 28 V VCE = 28 V VCE = 28 V −8, −7, −16dB IC = 2 x 2.5 A IC = 2 x 2.5 A PREF = 28 W 28 14 — 32 15 −51 — — — W dB dB * Class A Performance Charact eristi cs Indi cate Capabilit y but are not Tested. IMD3 - 3 T one Meaurement; relative to PREF TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT BROADBAND POWER GAIN vs FREQUENCY 2/5 SD1456 (TCC3100) TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT COLLECTOR EFFICIENCY vs FREQUENCY I MPEDANCE DATA FREQ. 170 MHz 200 MHz 230 MHz POUT = 100 W VCE = 28 V ICQ = 2 x 100 mA Class AB ZIN (Ω) 1.3 + j 0.6 1.0 + j 1.0 0.9 + j 1.8 ZOUT (Ω) 9.5 − j 10.0 9.0 − j 8.0 6.3 − j 6.5 3/5 SD1456 (TCC3100) I MPEDANCE DATA FREQ. 170 MHz 200 MHz 230 MHz VCE = 28 V ICQ = 2 x 2.5 A Class A ZIN (Ω) 1.05 + j 0.65 0.9 + j 1.1 1.25 + j 1.8 ZOUT (Ω) 13.5 − j 9.0 11.0 − j 6.5 9.5 − j 7.7 4/5 SD1456 (TCC3100) P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0168 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5