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TD350ETR

TD350ETR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOIC14

  • 描述:

    IC GATE DRVR HIGH-SIDE 14SO

  • 数据手册
  • 价格&库存
TD350ETR 数据手册
TD350E Advanced IGBT/MOSFET driver Datasheet - production data Applications  1200 V, 3-phase inverters  Motor control  UPS systems Description Features  1.5 A source/2.3 A sink (typ.) gate drive  Active Miller clamp feature  Two-level turn-off with adjustable level and delay  Desaturation detection  Fault status output  Negative gate drive capability  Input compatible with pulse transformer or optocoupler  Separate sink and source outputs for easy gate driving  UVLO protection  2 kV ESD protection (HBM) The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver. The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion. The device also includes IGBT desaturation protection and a FAULT status output, and is compatible with both pulse transformer and optocoupler signals. Table 1. Device summary Order code TD350E TD350ETR Temperature range Package -40, +125 °C SO-14 June 2013 This is information on a product in full production. DocID018539 Rev 3 Packaging Tube Tape and reel 1/18 www.st.com Contents TD350E Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.2 Voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.3 Desaturation protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.4 Active Miller clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.5 Two-level turn-off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.6 Minimum ON time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.7 Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.8 Fault status output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.9 Undervoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Typical performance curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Application diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 DocID018539 Rev 3 TD350E Block diagram 1 Block diagram Figure 1. Functional block diagram 9UHI 89/2 ,1 95() 'HVDW 9UHI )$8 /7 1& 9UHI &2)) '(6$7 2II GHOD\ 287+ 287/ 9/ 1& 9+ /92) )  9 9+ 2SWLRQDO &RQW URO E OR FN 3XOVH WUDQVIRUPHU 9+ 9UHI &/$03  9 *1' 2II OHYHO 7'( $0Y DocID018539 Rev 3 3/18 18 Pin connections 2 TD350E Pin connections Figure 2. Pin connections (top view) ,1   '(6$7 95()   9+ )$8/ 7   287+ 1&   287/ &2))   9/ 1&   &/$0 3   *1' /92)) 7'( ".W Table 2. Pin description 4/18 Name Pin number Type IN 1 Analog input VREF 2 Analog output +5 V reference voltage FAULT 3 Digital output Fault status output NC 4 Not connected COFF 5 Timing capacitor NC 6 Not connected LVOFF 7 Analog input Turn-off level GND 8 Power supply Signal ground CLAMP 9 Analog output Miller clamp VL 10 Power supply Negative supply OUTL 11 Analog output Gate drive output (sink) OUTH 12 Analog output Gate drive output (source) VH 13 Power supply Positive supply DESAT 14 Analog input Desaturation protection DocID018539 Rev 3 Function Input Turn-off delay TD350E 3 Absolute maximum ratings Absolute maximum ratings Table 3. Key parameters and their absolute maximum ratings Symbol Parameter Value Unit VHL Maximum supply voltage (VH - VL) 28 V VH Maximum VH voltage vs. GND 28 V VL Minimum VL voltage vs. GND -12 V Vout Voltage on OUTH, OUTL, CLAMP pins VL - 0.3 to VH + 0.3 V Vdes Voltage on DESAT, FAULT, LVOFF pin -0.3 to VH + 0.3 V Vother Voltage on other pins (IN, COFF, VREF) -0.3 to 7 V 500 mW -55 to 150 °C Maximum junction temperature 150 °C Rthja Thermal resistance junction-ambient 125 °C/W Rthjc Thermal resistance junction-case 22 °C/W ESD Electrostatic discharge (HBM) 2 kV Value Unit Pd Power dissipation Tstg Storage temperature Tj Table 4. Operating conditions Symbol Parameter VH Positive supply voltage vs. GND UVLO to 26 V VL Negative supply voltage vs. GND 0 to -10 V 26 V -40 to 125 °C VH-VL Toper Maximum total supply voltage Operating free air temperature range DocID018539 Rev 3 5/18 18 Electrical characteristics 4 TD350E Electrical characteristics TA = -20 to 125 °C, VH = 16 V, VL = -10 V (unless otherwise specified). Table 5. Electrical characteristics Symbol Parameter Test condition Min. Typ. 0.8 1.0 Max. Unit Input Vton IN turn-on threshold voltage Vtoff IN turn-off threshold voltage tonmin Iinp Minimum pulse width 100 V 4.0 4.2 V 135 220 ns 1 A 5.15 5.22 V V IN input current Voltage reference(1) Vref Voltage reference Iref Maximum output current T = 25 °C Tmin < T < Tmax 4.85 4.77 5.00 10 mA Desaturation protection Vdes Desaturation threshold Ides Source current 6.5 7.2 7.9 V A 250 Fault output tfault Delay for fault detection VFL FAULT low voltage IFLsink = 10 mA 500 ns 1 V Clamp Vtclamp VCL CLAMP pin voltage threshold Clamp low voltage 2.0 T = 25 °C; ICLsink = 500 mA Tmin < T < Tmax; ICLsink = 500 mA V VL + 2.5 VL + 3.0 V V 2.65 V 500  120 200 A -0.15 0 V VL + 0.35 V VL +1.0 VL +1.5 V V Off delay Vtdel Voltage threshold Rdel Discharge resistor 2.35 2.50 I = 1 mA Off levels Iblvoff LVOFF peak input current (sink) LVOFF = 12 V Violv Offset voltage LVOFF = 12 V VOL1 Output low voltage Iosink = 20 mA VOL2 Output low voltage T = 25 °C, Iosink = 200 mA Tmin < T < Tmax, Iosink = 200 mA -0.3 Outputs 6/18 DocID018539 Rev 3 TD350E Electrical characteristics Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit VL + 2.5 VL + 3.0 V V VOL3 Output low voltage T = 25 °C, Iosink = 500 mA Tmin < T < Tmax, Iosink = 500 mA VOH1 Output high voltage 1 Iosource = 20 mA VH - 2.5 V VOH2 Output high voltage 2 Iosource = 200 mA VH - 3.0 V VOH3 Output high voltage 3 Iosource = 500 mA VH - 4.0 V tr Rise time CL = 1 nF, 10% to 90% VL = 0 VL = -10 V 130 175 ns ns tf Fall time (2) CL = 1 nF, 90% to 10% VL = 0 VL = -10 V 75 90 ns ns 600 ns 650 ns 570 ns 620 ns 10% output change; T = 25 °C 400 10% output change; Tmin < T < Tmax 350 10% output change; T = 25 °C 350 10% output change; Tmin < T < Tmax 300 10% output change 25 50 120 ns UVLOH UVLO top threshold 10 11 12 V UVLOL UVLO bottom threshold 9 10 11 V 0.5 1 tpd_on tpd_off Tw Turn-on propagation delay Turn-off propagation delay Input to output pulse distortion 500 450 Undervoltage lockout (UVLO) Vhyst UVLO hysteresis UVLOH - UVLOL V Supply current Iin Quiescent current Output = 0 V, no load 5 mA 1. Recommended capacitor range on VREF pin is 10 nF to 100 nF. 2. 2-step turn-off disabled. DocID018539 Rev 3 7/18 18 Functional description TD350E 5 Functional description 5.1 Input The input is compatible with optocouplers or pulse transformers. The input is triggered by the signal edge and allows the use of a small-sized, low cost pulse transformer. Input is active low (output is high when input is low) to ease the use of the optocoupler. When driven by a pulse transformer, the input pulse (positive and negative) width must be larger than the minimum pulse width tonmin. 5.2 Voltage reference A voltage reference is used to create accurate timing for the two-level turn-off with external resistor and capacitor. 5.3 Desaturation protection Desaturation protection ensures the protection of the IGBT in the event of overcurrent. When the DESAT voltage goes higher than 7 V, the output is driven low (with 2-level turn-off, if applicable). The FAULT output is activated. The FAULT state is exited at the next falling edge of IN input. A programmable blanking time is used to allow enough time for IGBT saturation. Blanking time is provided by an internal current source and external capacitor. DESAT input can also be used with an external comparator for overcurrent or overtemperature detection. 5.4 Active Miller clamp A Miller clamp allows the control of the Miller current during a high dV/dt situation and can eliminate the need for a negative supply voltage. During turn-off, the gate voltage is monitored and the clamp output is activated when gate voltage goes below 2 V (relative to GND). The clamp voltage is VL+3 V max. for a Miller current up to 500 mA. The clamp is disabled when the IN input is triggered again. 5.5 Two-level turn-off The two-level turn-off is used to increase the reliability of the application. During turn-off, gate voltage can be reduced to a programmable level in order to reduce the IGBT current (in the event of overcurrent). This action prevents both dangerous overvoltage across the IGBT and RBSOA problems, especially at short-circuit turn-off. The two-level turn-off (Ta) delay is programmable through an external resistor and capacitor for accurate timing (refer to Equation 1). Turn-off delay (Ta) is also used to delay the input signal to prevent distortion of input pulse width. 8/18 DocID018539 Rev 3 TD350E Functional description Equation 1 Ta [s]  0.7 • Roff [k] • Coff [nF] 5.6 Minimum ON time In order to ensure the proper operation of the 2-level turn-off function, the input ON time (Twin) must be greater than the Twinmin value: Equation 2 Twinmin = Ta + 2 • Rdel • Coff Rdel is the internal discharge resistor and Coff is the external timing capacitor. Input signals smaller than Ta are ignored. Input signals larger than Twinmin are transmitted to the output stage after the Ta delay with minimum width distortion (Tw = Twout - Twin). For an input signal width Twin between Ta and Twinmin, the output width Twout is reduced below Twin (pulse distortion) and the IGBT could be partially turned on. These input signals should be avoided during normal operation. 5.7 Output The output stage is able to sink 2.3 A and source 1.5 A (typ.) at 25 °C (1.2 A/0.75 A minimum over the full temperature range). Separate sink and source outputs allow independent gate charge and discharge control without an extra external diode. 5.8 Fault status output Fault output is used to signal a fault event (desaturation, UVLO) to a controller. The fault pin is designed to drive an optocoupler. 5.9 Undervoltage protection Undervoltage detection protects the application in the event of a low VH supply voltage (during startup or a fault situation). During undervoltage, the OUTH pin is open and the OUTL pin is driven low (active pull-down for VH > 2 V, passive pull-down for VH < 2 V). Fault output signals the undervoltage state and is reset only when undervoltage state disappears. DocID018539 Rev 3 9/18 18 Functional description TD350E Figure 3. Undervoltage protection 89+ 9+ 89/ 9 9 287 )$8/7 ".W 10/18 DocID018539 Rev 3 TD350E Functional description Figure 4. Detailed internal schematic 89/2 & RP SB,QSXW ,1 'HOD\ 95() 9UHI 9+ 9   9 $ & R P SB ' HVDW '(6$7  9 &RQWUROEORFN 9UHI )$8/7 & R P SB ' HOD\ 2 II &2)) &RPSB&ODPS 6  9 9 &/$03 9+ 287+ 9+ OHYHO2)) G  ULYH U /92)) 287/ 9/ *1' $0Y DocID018539 Rev 3 11/18 18 Timing diagrams 6 TD350E Timing diagrams Figure 5. Turn-on and turn-off 7ZLQ ,1 &2)) 7D 7D 9+OHYHO 287 /92)) 7ZRXW 9/OHYHO 2SHQ &/$03 9+OHYHO 0LOOHUSODWHDX 9JH &ODPSWKUHVKROG 9/OHYHO 9FH $0 Figure 6. Minimum ON time 7LQ7 D 7D7LQ7 ZLQPLQ 7LQ!7 ZLQPLQ ,1 9 &2)) 7D 9+OHYHO 7D 7D /92)) 287 9/OHYHO 2SHQ &/$03 $0 Figure 7. Desaturation fault ,1 9 &2)) 7D 7D 7D 9+OHYHO /92)) 287 9/OHYHO 9 '(6$7 'HVDWEODQNLQJWLPH 2SHQ )$8/7 $0 12/18 DocID018539 Rev 3 TD350E Typical performance curves 7 Typical performance curves Figure 8. Supply current vs. temperature Figure 9. Low level output voltage vs. temp. 5.0  92/  9 92/9/ 9 4.0 In (mA) 3.0 2.0  ,RVLQN P$  ,RVLQN P$ 1.0 ,RVLQN P$ 0.0  -50 -25 0 25 50 75 100 125    Temp (°C) Figure 10. Desaturation threshold vs. temp.     $0 Figure 11. Voltage reference vs. temperature      9UHI 9 9GHV 9  7H PS ƒ&                       7H PS ƒ& 7H PS  ƒ& $0 Figure 12. High level output voltage vs. temperature $0 Figure 13. Desaturation source current vs. temperature    ,RVRXUFH P$   $ ,RVRXUFH P$  ,GHV 9+92+ 9    ,RVRXUFH P$        7HPS ƒ&     $0 DocID018539 Rev 3        7H PS  ƒ& $0 13/18 18 Application diagrams 8 TD350E Application diagrams Figure 14. Single supply IGBT drive with active Miller clamp and 2-level turn-off 9+ 89/2 ,1  9 9UHI 95() 9UHI 1& &2)) 2II GHOD\ 1& /92) ) 9+ 9 9+ 287+ &RQW URO EORFN )$8 /7 9UHI '(6$7 'HVDW 287/ 9/ &/$03 *1' 2II  OHYHO $0 7'( Figure 15. Large IGBT drive with negative gate drive and desaturation detection 9UHI 89/2 ,1 95() 9UHI )$8 /7 1& 9UHI &2)) 2II GHOD\ 1& 9+ /92) ) '(6$7 'HVDW &RQW URO EORFN 3XO VH WUDQVIRUPHU 9+ 9UHI  9 9+ 287+ 287/ 9/ &/$03  9 *1' 2II  OHYHO 7'( $0 Figure 16. Use of DESAT input for direct overcurrent detection $0 14/18 DocID018539 Rev 3 TD350E 9 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 17. Package SO-14 package outline 62 DocID018539 Rev 3 15/18 18 Package information TD350E Table 6. SO-14 package mechanical data Dimensions (mm) Symbol Min. Max. A 1.35 1.75 A1 0.10 0.25 A2 1.10 1.65 B 0.33 0.51 C 0.19 0.25 D 8.55 8.75 E 3.80 4.00 e 1.27 H 5.80 6.20 h 0.25 0.50 L 0.40 1.27 k 0 8 ddd 16/18 Typ. 0.10 DocID018539 Rev 3 TD350E 10 Revision history Revision history Table 7. Document revision history Date Revision 08-Mar-2011 1 First release. 21-Sep-2011 2 – Updated Table 1 – Minor text changes throughout the document 3 Updated Figure 1, Figure 4 to Figure 7, Figure 9 to Figure 16 (minor corrections). Updated Figure 3 (replaced “VCCmin” by “2 V”). Updated Table 5 (moved “Iosink” for “VOL1/2/3” symbols to “Test condition”). Updated Section 5.5 (replaced “Turn-off” by “The two-level turn-off”, added Equation 1). Updated Section 5.6 (added heading for Equation 2). Updated Table 6 (updated data, reversed order of Figure 17 and Table 6). Minor corrections throughout document. 13-Jun-2013 Changes DocID018539 Rev 3 17/18 18 TD350E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 DocID018539 Rev 3
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