TEA2025D013TR

TEA2025 STEREO AUDIO AMPLIFIER 1 FEATURES Figure 1. Package „ DUAL OR BRIDGE CONNECTION MODES „ FEW EXTERNAL COMPONENTS „ SUPPLY VOLTAGE DOWN TO 3V „ HIGH CHANNEL SEPARATION „ VERY LOW SWITCH ON/OFF NOISE „ MAX GAIN OF 45dB WITH ADJUST EXTERNAL RESISTOR PowerDIP16 SO20 Table 1. Order Codes Part Number Package TEA2025B PowerDIP 12+2+2 „ SOFT CLIPPING „ THERMAL PROTECTION „ 3V < VCC < 15V „ P = 2 · 1W, VCC = 6V, RL = 4Ω 2 „ P = 2 · 2.3W, VCC = 9V, RL = 4Ω „ P = 2 · 0.1W, VCC = 3V, RL = 4Ω The TEA2025B/D is a monolithic integrated circuit in 12+2+2 Powerdip and 12+4+4 SO, intended for use as dual or bridge power audio amplifier portable radio cassette players. TEA2025D SO20 12+4+4 TEA2025D013TR SO16 in Tape & Reel DESCRIPTION Figure 2. Block Diagram GND(Sub) IN 1+ THERMAL PROTECT. FEED GND GND BOOT 1 OUT 1 50Ω 10KΩ + START CIRCUIT 1 1 5KΩ SVR DECOUPLING VS+ BRIDGE IN 2+ + 2 2 50Ω 10KΩ 50Ω D94AU120 April 2010 FEED GND GND BOOT 2 OUT 2 Rev. 3 1/11 TEA2025 Table 2. Absolute Maximum Ratings Symbol Parameter Value Unit VS Supply Voltage 15 V IO Ouput Peak Current 1.5 A TJ Junction Temperature 150 °C Tstg Storage Temperature 150 °C Figure 3. PIN CONNECTION POWERDIP12+2+2 Figure 4. PIN CONNECTION SO12+4+4 BRIDGE 1 20 VCC OUT 2 2 19 OUT 1 BOOT 2 3 18 BOOT 1 GND 4 17 GND GND 5 16 GND GND 6 15 GND GND 7 14 GND FEEDBACK 8 13 FEEDBACK IN 2(+) 9 12 IN 1(+) 11 GND(Sub) SVR 10 D94AU119 Table 3. Thermal Data Symbol Description SO 12+4+4 (1) PDIP 12+2+2 (2) Unit Rth j-case Thermal Resistance Junction-case Max 15 15 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 65 60 °C/W Note: 1. The Rth j-amb is measured with 4sq cm copper area heatsink 2. The Rth j-amb is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm2 2/11 TEA2025 Table 4. Electrical Characteristcs (Tamb = 25°C, VCC = 9V, Stereo unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. VS Supply Voltage IQ Quiescent Current 35 VO Quiescent Output Voltage 4.5 AV Voltage Gain ∆AV 12 V 50 mA V Stereo 43 45 47 dB Bridge 49 51 53 dB ±1 dB Voltage Gain Difference Input Impedance PO Output Power (d = 10%) Stereo 8 (per channel) Bridge 2.3 W 1.3 W 1 W 9V 8Ω 6V 4Ω 6V 8Ω 0.6 W 6V 16Ω 0.25 W 6V 32Ω 0.13 W 3V 4Ω 0.1 W 3V 32Ω 0.02 W 12V 8Ω 2.4 W 9V 8Ω 4.7 W 6V 4Ω 2.8 W 6V 8Ω 1.5 W 3V 16Ω 0.18 W 3V 32Ω 0.06 W SVR Supply Voltage Rejection f = 100Hz, V R = 0.5V, Rg = 0 EN(IN) Input Noise Voltage RG = 0 0.7 Stereo Bridge 0.3 0.5 40 RG = 10 4Ω f = 1KHz, Rg= 10KΩ Cross-Talk KΩ 4Ω Vs = 9V; RL = 4Ω 1.7 30 9V Distortion CT Unit 3 Rj d Max. 40 1.5 % 46 dB 1.5 3 mV 3 6 mV 52 dB Table 5. Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9 3/11 TEA2025 Figure 5. Bridge Application (Powerdip) Figure 8. Output Voltage vs. Supply Voltage Figure 6. Stereo Application (Powerdip) Figure 9. Output Power vs. Supply Voltage (THD = 10%, f = 1KHz) Figure 7. Supply Current vs. Supply Voltage (RL = 4Ω)) Figure 10. THD versus Output Power (f = 1KHz, VS = 6V) 4/11 TEA2025 3 APPLICATION INFORMATION 3.1 Input Capacitor Input capacitor is PNP type allowing source to be referenced to ground. In this way no input coupling capacitor is required. However, a series capacitor (0.22 µF)to the input side can be useful in case of noise due to variable resistor contact. 3.2 Bootstrap The bootstrap connection allows to increase the output swing. The suggested value for the bootstrap capacitors (100µF) avoids a reduction of the output signal also at low frequencies and low supply voltages. 3.3 Voltage Gain Adjust 3.3.1 STEREO MODE The voltage gain is determined by on-chip resistors R1 and R2 together with the external RfC1 series connected between pin 6 (11) and ground. The frequency response is given approximated V OUT R1 -------------- = -------------------------------------------1 V IN Rf ÷ R2 + ----------------JWC1 With Rf=0, C1=100 µF, the gain results 46 dB with pole at f=32 Hz. THE purpose of Rf is to reduce the gain. It is recommended to not reduce it under 36 dB. 3.3.2 BRIDGE MODE Figure 11. The bridge configuration is realized very easily thanks to an internal voltage divider which provides (at pin 1) the CH 1 output signal after reduction. It is enough to connect pin 6 (inverting input of CH 2) with a capacitor to pin 1 and to connect to ground the pin 7. The total gain of the bridge is given by: ⎛ ⎞ V OUT R1 R3 R1 -------------- = --------------------------------------------- ⎜ 1 + -------- -----------------------------------------------⎟ 1 ⎜ R4 1 ⎟ V IN Rf ÷ R2 + ----------------- ⎝ R2 + R4 + -----------------⎠ JWC1 JWC1 and with the suggested values (C1 = C2 = 100 µF, Rf= 0) means: Gv = 52 dB with first pole at f = 32 Hz 5/11 TEA2025 Figure 12. 3.4 Output Capacitors. 1 The low cut off frequency due to output capacitor depending on the load is given by: F L = ----------------------------------with COUT 470mF and RL = 4 ohm it means FL = 80 Hz. 2ΠC OUT ⋅ R L 3.5 Pop Noise Most amplifiers similar to TEA 2025B need external resistors between DC outputs and ground in order to optimize the pop on/off performance and crossover distortion. Figure 13. The TEA 2025B solution allows to save components because of such resistors (800 ohm)are included into the chip. 3.6 Stability A good layout is recommended in order to avoid oscillations. Generally the designer must pay attention on the following points: – Short wires of components and short connections. – No ground loops. – Bypass of supply voltage with capacitors as nearest as possible to the supply I.C.pin. The low value(poliester)capacitors must have good temperature and frequency characteristics. – No sockets. the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature: all that happens is that PO (and 6/11 TEA2025 therefore Ptot) and Id are reduced. 4 APPLICATION SUGGESTION The recommended values of the components are those shown on stereo application circuit of Fig. 6 different values can be used, the following table can help the designer. Table 6. 5 COMPONENT RECOMMENDED VALUE C1,C2 0.22µF INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF VARIABLE RESISTOR C3 100µF RIPPLE REJECTON C4,C5 100µF BOOTSTRAP C6,C7 470µF OUTPUT DC DECOUPLING INCREASE OF LOW FREQUENCY CUTOFF C8,C9 0.15µF FREQUENCY STABILITY DANGEROF OSCILLATIONS C10, C11 100µF INVERTING INPUT DC DECOUPLING INCREASE OFLOW FREQUENCYCUTOFF PURPOSE LARGER THAN SMALLER THAN DEGRADATION OF SVR, INCREASE OF AT LOW FREQUENCY AND LOW VOLTAGE PACKAGE MECHANICAL DATA In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 7/11 TEA2025 Figure 14. SO20 Mechanical Data & Package Dimensions mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.10 0.30 0.004 0.012 B 0.33 0.51 0.013 0.200 C 0.23 0.32 0.009 0.013 D (1) 12.60 13.00 0.496 0.512 E 7.40 7.60 0.291 0.299 e 1.27 0.050 H 10.0 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.40 1.27 0.016 0.050 k ddd OUTLINE AND MECHANICAL DATA 0˚ (min.), 8˚ (max.) 0.10 0.004 (1) “D” dimension does not include mold flash, protusions or gate burrs. Mold flash, protusions or gate burrs shall not exceed 0.15mm per side. SO20 0016022 D 8/11 TEA2025 Figure 15. DIP16 Mechanical Data & Package Dimensions mm DIM. MIN. a1 0.51 B 0.77 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.030 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 17.78 0.700 F 7.1 0.280 I 5.1 0.201 L OUTLINE AND MECHANICAL DATA 3.3 0.130 DIP16 Z 1.27 0.050 9/11 TEA2025 6 REVISION HISTORY Table 7. Revision History Date Revision September 2003 2 Updates not recorded 30-Apr-2010 3 Updated title and added environmental compliance statement for package 10/11 Description of Changes TEA2025 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11