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TIP102

TIP102

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    互补硅功率达林顿晶体管

  • 数据手册
  • 价格&库存
TIP102 数据手册
TIP102 TIP107 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ 3 1 2 TO-220 DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN TIP102 PNP TIP107 Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 8 A 15 A IC I CM IB P tot T stg Tj Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Storage Temperature Max. Operating Junction Temperature 1 A 80 2 W W -65 to 150 o C 150 o C * For PNP types voltage and current values are negative. April 2003 1/4 TIP102 / TIP107 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I B = 0) Parameter V CE = 50 V 50 µA I CBO Collector Cut-off Current (I E = 0) V CB = 100 V 50 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 8 mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * Test Conditions I C = 30 mA Typ. 100 V Collector-Emitter Saturation Voltage IC = 3 A IC = 8 A I B = 6 mA I B = 80 mA 2 2.5 V V V BE * Base-Emitter Voltage IC = 8 A V CE = 4 V 2.8 V h FE * DC Current Gain IC = 3 A IC = 8 A V CE = 4 V V CE = 4 V VF * Forward Voltage of Commutation Diode (I B = 0) I F = - I C = 10 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 Min. 1000 200 20000 2.8 V TIP102 / TIP107 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 0.409 L2 16.40 0.645 L4 13.00 14.00 0.511 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 M DIA. 2.60 3.75 0.551 0.154 0.102 3.85 0.147 0.151 P011CI 3/4 TIP102 / TIP107 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4
TIP102 价格&库存

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TIP102
    •  国内价格
    • 1+3.41185
    • 30+3.29420
    • 100+3.05890
    • 500+2.82360
    • 1000+2.70595

    库存:0