TLC386D

® T LC116 ---> TLC386 T/D/S/A SENSITIVE GATE TRIACS . . FEATURES VERY LOW IGT = 5mA max LOW IH = 15mA max DESCRIPTION The TLC116 ---> TLC386 T/D/S/A triac family uses a high performance glass passivated PNPN technology. These parts are suitable for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Parameter Tl = 40°C Ta = 25°C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 4 s at 4.5 mm from case Parameter 116 T/D/S/A VDRM VRRM Repetitive peak off-state voltage Tj = 110°C 2 A1 A2 G TL (Plastic) Value 3 1.3 (1) Unit A ITSM 31.5 30 4.5 10 50 A I2 t dI/dt A2 s A/µs - 40 to + 150 - 40 to + 110 230 °C °C °C Symbol TLC 226 T/D/S/A 400 336 T/D/S/A 600 386 T/D/S/A 700 Unit 200 V (1) With Cu surface 1cm . February 1999 Ed: 1A 1/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient on printed circuit with Cu surface 1cm2 Value 50 20 15 Unit °C/W °C/W °C/W Rth (j-l) DC Junction leads for DC Rth (j-l) AC Junction leads for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 0.1W PGM = 2W (tp = 20 µs) IGM = 1A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant T IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL=33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 100mA gate open ITM= 4A tp= 380µs VDRM VRRM Rated Rated up to Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX TYP 10 10 MAX MAX MAX MIN TYP MAX 15 15 15 15 15 15 1.85 0.01 0.75 20 20 V/µs 5 5 Suffix D 5 10 1.5 0.2 2 25 25 25 25 25 25 mA V mA S 10 10 A 10 25 V V µs mA mA Unit VD=VDRM RL =3.3kΩ VD=VDRM IG = 40mA dIG/dt = 0.5A/µs IG= 1.2 IGT Linear slope VD=67%VDRM gate open (dI/dt)c = 1.3A/ms (dV/dt)c * Tj=110°C TYP 1 1 5 5 V/µs * For either polarity of electrode A 2 voltage with reference to electrode A1. 2/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A ORDERING INFORMATION Package IT(RMS) A TLC ..6 3 VDRM / VRRM V 200 400 600 700 T X X X X Sensitivity Specification D X X X X S X X X X A X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tlead). Fig.3 : RMS on-state current versus case temperature. Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. 3/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2 t. Fig.8 : On-state characteristics (maximum values). 4/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A PACKAGE MECHANICAL DATA TL Plastic REF. D E A DIMENSIONS Millimeters Min. Max. 10.05 8.05 4.75 1.75 7.25 4.50 2.04 0.75 3.04 0.85 0.80 0.029 Inches Min. 0.375 0.297 0.500 0.167 0.049 0.266 0.187 0.069 0.285 0.177 0.120 0.033 Max. 0.396 0.317 A B F B G C 9.55 7.55 12.70 4.25 1.25 6.75 C D E F I H H G H I Marking : type number Weight : 0.75 g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5