TM8050H-8D3-TR

TM8050H-8D3 Datasheet 80 A 800 V high temperature thyristor (SCR) in D3PAK package Features A G K A K G D3PAK • High junction temperature: Tj = 150 °C • Blocking voltage: VDRM = VRRM = 800 V • Nominal current: IT(RMS) = 80 A • Gate triggering current: IGT max. = 50 mA • High noise immunity: dV/dt > 1 kV/µs • • Surface mounted device D3PAK for compact designs Increase of thermal margin due to extended Tj up to 150 °C • Low ID and IR in blocking state • Ecopack2 (includes halogen free & RoHS compliance) Applications Product status link TM8050H-8D3 • • • • • • • • AC-DC rectifier controlled bridge Motorbike voltage regulator Variable speed motor drive Battery charging system AC solid state relay By-pass switch of UPS Industrial welding systems Motor soft starter Description Product summary IT(RMS) 80 A VDRM/VRRM 800 V IGT 50 mA Tj 150 °C Available in power surface mount package (D3PAK), the TM8050H-8D3 device is an 800V SCR thyristor suitable for applications where high power switching (IT(RMS) = 80 A) and low power dissipation (VTM = 1.55 V at 160 A) are key features. These features make it ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications. DS11507 - Rev 4 - August 2019 For further information contact your local STMicroelectronics sales office. www.st.com TM8050H-8D3 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise stated Symbol IT(RMS) Parameter RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current, VR = 0 V I2t VRRM/VDRM Tc = 130 °C tp = 8.3 ms tp = 10 ms Tj initial = 25 °C Tj = 25 °C I2t value for fusing Maximum repetitive symmetric blocking voltage Value Unit 80 A 50 A 731 A 670 2245 A2s 800 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 50 Hz Tj = 25 °C 200 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 8 A Tj = 150 °C 1 W PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature soldering during 10 s 245 °C Value Unit Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test conditions Min. 2.5 Max. 50 Max. 1.5 V Min. 0.2 V IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 80 A , VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/μs Typ. 3 µs Tj = 150 °C Min. 1000 V/µs Tj = 150 °C Max. 150 µs IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = VDRM, RL = 3.3 kΩ IH(1) dV/dt tq VD = 67% VDRM, gate open IT = 33 A, dIT/dt = 10 A/μs, VR = 75 V, VD = 400 V, dVD/dt = 20 V/μs, tP = 100 μs Tj = 125 °C mA 1. For both polarities of A2 referenced to A1 DS11507 - Rev 4 page 2/10 TM8050H-8D3 Characteristics Table 3. Static characteristics Symbol VTM (1) Test conditions Value Unit ITM = 160 A, tp = 380 µs Tj = 25 °C Max. 1.55 Vt0 On state threshold voltage Tj = 150 °C Max. 0.85 RD(1) On state dynamic resistance Tj = 150 °C Max. 5.5 mΩ Tj = 25 °C Max. 20 µA Tj = 150 °C Max. 2.5 mA (1) IDRM, IRRM VD = VDRM = VR = VRRM = 800 V V 1. For both polarities of A2 referenced to A1 Table 4. Thermal parameters Symbol DS11507 - Rev 4 Parameter Rth(j-c) Junction to case (DC, max.) Rth(j-a) Junction to ambient (DC, typ., SCU = 2.1 cm2) Value Unit 0.25 °C/W 40 °C/W page 3/10 TM8050H-8D3 Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and DC on-state current versus case temperature P(W) 90 I T(AV)(A) D.C α = 180° 80 80 α = 120° α = 90° 70 70 α = 60° α = 60° 60 60 α = 30° 50 50 40 40 30 30 20 20 10 α = 90° α = 30° 10 IT(AV)(A) D.C α = 120° α = 180° T C (°C) 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Figure 3. On-state characteristics (maximum values) 1000 0 65 ITM(A) 25 50 75 100 125 150 Figure 4. Average and DC on-state current versus ambient temperature I T(AV)(A) 4.5 4.0 D.C 3.5 3.0 100 Tj = 150 °C α = 180° 2.5 2.0 1.5 10 1.0 Tj max : VTO = 0.85 V Rd = 5.5m Ω Tj = 25 °C VTM (V) 1 1.0 0.0 2.0 3.0 T A(°C) 0.0 0 4.0 Figure 5. Relative variation of thermal impedance versus pulse duration 1.0E+00 0.5 25 50 75 100 125 150 Figure 6. Thermal resistance junction to ambient versus copper surface under tab (D3PAK printed circuit board FR4, copper thickness: 35 µm) K = [Zth/Rth] 45 Zth(j-c) Rth(j-a)(°C/W) Zth(j-a) D3PAK 40 1.0E-01 35 30 tp(s) 1.0E-02 1.0E-03 SCu (cm²) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 25 0 DS11507 - Rev 4 5 10 15 20 25 30 35 40 page 4/10 TM8050H-8D3 Characteristics (curves) Figure 7. Surge peak on-state current versus number of cycles 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 ITSM (A) ITSM(A) 10000 dI/dt limitation: 200 A/µs Tj initial = 25 °C VR = 0 V ITSM Non repetitive Tj initial = 25 °C 1000 VR = 0 V Repetitive Tc = 130 °C 100 Number of cycles t P(ms) 10 1 10 100 1000 Figure 9. Relative variation of holding current and latching current versus junction temperature (typical values) 2.0 Figure 8. Non repetitive surge peak on-state current for a half cycle sine pulse versus pulse width (tp < 10 ms) 0.01 1.00 10.00 Figure 10. Relative variation of gate trigger current and gate voltage versus junction temperature 2.0 IH, IL [Tj] / IH, IL [Tj = 25 °C] 0.10 IGT, VGT [Tj] / IGT, VGT [Tj = 25 °C] IGT 1.8 1.5 IH 1.5 1.3 1.0 IL 1.0 VGT 0.8 0.5 0.5 T j (°C) 0.3 0.0 T j (°C) -50 0.0 -50 -25 0 25 50 75 100 125 Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage 1.0E+00 -25 0 25 50 75 100 125 150 150 Figure 12. Relative variation of static dV/dt immunity versus junction temperature (typical values) 5 IDRM, IRRM [Tj, VDRM, VRRM] / IDRM, IRRM [150 °C, 800 V] dV/dt [Tj] / dV/dt [Tj = 150 °C] VD = 0.67 x VDRM VDRM= VRRM = 800 V (maximum values) 4 1.0E-01 3 1.0E-02 2 VDRM= VRRM= 800 V (typical values) 1.0E-03 1 VDRM = VRRM= 600 V (typical values) 1.0E-04 0 T j (°C) 10 1.0E-05 25 DS11507 - Rev 4 50 75 100 125 T j (°C) 30 50 70 90 110 130 150 150 page 5/10 TM8050H-8D3 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 D³PAK package information • • • Epoxy meets UL 94,V0 Lead-free package leads, halogen-free molding resin Pre-conditioning moisture sensitivity MSL 1 Figure 13. D³PAK package dimension definitions A E E1 c2 L2 D1 D D2 H D3 L4 c e A1 e b Gauge plane 0~8° A2 L3 DS11507 - Rev 4 L page 6/10 TM8050H-8D3 D³PAK package information Table 5. D³PAK package mechanical data Dimensions Ref. Inches (dimension in inches are given for reference only) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.90 5.10 0.1929 0.2008 A1 2.70 2.90 0.1063 0.1142 A2 0.02 0.25 0.0008 0.0098 b 1.15 1.45 0.0453 0.0571 c 0.40 0.65 0.0157 0.0256 c2 1.45 1.61 0.0571 0.0634 D 13.80 14.00 0.5433 0.5512 D1 11.80 12.10 0.4646 0.4764 D2 7.50 7.80 0.2953 0.3071 D3 2.90 3.20 0.1142 0.1260 E 15.85 16.05 0.6240 0.6319 E1 13.30 13.60 0.5236 0.5354 e 5.45 0.2146 H 18.70 19.10 0.7362 0.7520 L 1.70 2.00 0.0669 0.0789 L2 1.00 1.15 0.0394 0.0453 L3 L4 0.25 3.80 0.0098 4.10 0.1496 0.1614 Figure 14. Minimum footprint (dimensions in mm) 16.1 13 3.7 20.1 1.9 10.9 DS11507 - Rev 4 page 7/10 TM8050H-8D3 Ordering information 3 Ordering information Figure 15. Ordering information scheme TM 80 50 H - 8 D3 - TR Series Thyristor RMS current 80 = 80 A IGT current 50 = 50 mA Maximum junction temperature H = 150 °C Voltage 8 = 800 V Package D3 = D3PAK Tape and reel Table 6. Ordering information DS11507 - Rev 4 Order code Marking Package Weight Base qty. Delivery mode TM8050H-8D3-TR TM8050H8 D3PAK 4.2 g 400 Tape and reel page 8/10 TM8050H-8D3 Revision history Table 7. Document revision history DS11507 - Rev 4 Date Revision Changes 11-Feb-2016 1 Initial release. 01-Apr-2016 2 Updated Table 3: "Electrical characteristics (Tj = 25 °C unless otherwise specified)". 02-May-2016 3 Updated Thermal parameters. 30-Jul-2019 4 Updated Table 1, Figure 8 and Figure 9. Minor text change. page 9/10 TM8050H-8D3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11507 - Rev 4 page 10/10