TMBAT49

® TMBAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 70 °C tp = 1s δ ≤ 0.5 tp = 10ms MELF (Glass) Value 80 500 3 10 - 65 to + 150 - 65 to + 125 260 Unit V mA A A °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 110 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * VF * Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Test Conditions VR = 80V IF = 10mA IF = 100mA IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit µA V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions f = 1MHz VR = 0V VR = 5V * Pulse test: tp ≤ 300µs δ < 2%. Min. Typ. 120 35 Max. Unit pF August 1999 Ed 1A 1/4 TMBAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 2/3 TMBAT 49 F igure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. Figure 7. - Surge non repetitive forward current versus number of cycles. 3/4 TMBAT 49 PACKAGE MECHANICAL DATA MELF Glass DIMENSIONS A REF. Millimeters Min. Typ. Max. 5.20 2.65 0.60 2.50 Min. 0.189 0.098 0.018 Inches Typ. Max. 0.205 0.104 0.024 0.098 A / OB 4.80 2.50 0.45 ∅B C ∅D OD / C C FOOT PRINT DIMENSIONS (Millimeter) 3 4 6.5 Marking: ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4