®
TMMBAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Ti = 95 °C
MINIMELF (Glass)
Value 100 100 350 750 100 - 65 to + 150 - 65 to + 125 260
Unit V mA mA mA mW °C °C °C
THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 100°C Test Conditions IR = 100µA IF = 1mA IF = 200mA VR = 50V Min. 100 0.4 0.45 1 0.1 20 µA Typ. Max. Unit V V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test Conditions VR = 1V f = 1MHz Min. Typ. 2 Max. Unit pF
* Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed: 1A
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TMMBAT 41
Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Reverse current versus continuous reverse voltage (typical values).
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TMMBAT 41
F igure 5. Capacitance C versus reverse applied voltage VR (typical values).
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TMMBAT 41
PACKAGE MECHANICAL DATA MINIMELF Glass
DIMENSIONS
A
REF.
Millimeters Min. Typ. 3.40 1.60 0.45 1.50 Max. 3.6 1.62 0.50 Min. 0.130 0.063 0.016 3.30 1.59 0.40
Inches Typ. 0.134 0.063 0.018 0.059 Max. 0.142 0.064 0.020
A
/ OB
B C D
C
C
FOOT PRINT DIMENSIONS (Millimeter)
2
2.5 5
Marking: ring at cathode end. Weight: 0.05g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4
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