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TMMBAT46

TMMBAT46

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    TMMBAT46 - SMALL SIGNAL SCHOTTKY DIODE - STMicroelectronics

  • 数据手册
  • 价格&库存
TMMBAT46 数据手册
® TMMBAT 46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordware Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Tl = 80 °C MINIMELF (Glass) Value 100 150 350 750 150 - 65 to + 150 - 65 to + 125 260 Unit V mA mA mA mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W August 1999 Ed: 1A 1/4 TMMBAT 46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 75V VR = 50V VR = 10V Test Conditions IR = 100µA IF = 0.1mA IF = 10mA IF = 250mA VR = 1.5V Min. 100 0.25 0.45 1 0.5 5 0.8 7.5 2 15 5 20 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = 0V VR = 1V f = 1MHz Min. Typ. 10 6 Max. Unit pF Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). 2/4 TMMBAT 46 Figure 3. Reverse current versus junction temperature (typical values). Figure 4. Reverse current versus continuous reverse voltage. Figure 5. Forward current versus forward voltage (typical values). 3/4 TMMBAT 46 PACKAGE MECHANICAL DATA MINIMELF Glass DIMENSIONS A REF. Millimeters Min. Typ. 3.40 1.60 0.45 1.50 Max. 3.6 1.62 0.50 Min. 0.130 0.063 0.016 Inches Typ. 0.134 0.063 0.018 0.059 Max. 0.142 0.064 0.020 / OB A B 3.30 1.59 0.40 C C C D FOOT PRINT DIMENSIONS (Millimeter) 2 2.5 5 Marking: ring at cathode end. Weight: 0.05g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4
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