TMMBAT48

® TMMBAT 47 TMMBAT 48 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordward Current Surge non Repetitive Forward Current Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms tp = 1s Ptot Tstg Tj TL Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C MINIMELF (Glass) TMMBAT47 20 TMMBAT48 40 Unit V mA A A 350 1 7.5 1.5 330 - 65 to 150 - 65 to 125 260 mW °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W August 1999 Ed: 1A 1/5 TMMBAT 47/TMMBAT 48 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR Tj = 25°C Tj = 25°C VF* Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C Tj = 25°C Tj = 60°C VR = 40V VR = 20V VR = 10V TMMBAT48 VR = 20V VR = 10V TMMBAT47 Test Conditions IR = 10µA IR = 25µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 150mA IF = 300mA IF = 50mA IF = 200mA IF = 500mA VR = 1.5V All Types TMMBAT48 TMMBAT47 TMMBAT47 TMMBAT48 All Types Min. 20 40 0.25 0.3 0.4 0.5 0.8 1 0.5 0.75 0.9 1 10 4 20 10 30 2 15 5 25 25 50 µA V Typ. Max. Unit V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C trr Tj = 25°C IF = 10mA Test Conditions VR = 0V VR = 1V VR = 1V irr = 1mA RL = 100Ω f = 1MHz Min. Typ. 20 12 10 ns Max. Unit pF * Pulse test: tp ≤ 300µs δ < 2%. 2/5 TMMBAT 47/TMMBAT 48 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 3/5 TMMBAT 47/TMMBAT 48 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). 4/5 TMMBAT 47/TMMBAT 48 PACKAGE MECHANICAL DATA MINIMELF Glass A DIMENSIONS REF. Min. / OB Millimeters Typ. 3.40 1.60 0.45 1.50 Max. 3.6 1.62 0.50 Min. 0.130 0.063 0.016 3.30 1.59 0.40 Inches Typ. 0.134 0.063 0.018 0.059 Max. 0.142 0.064 0.020 A B C D C C FOOT PRINT DIMENSIONS (Millimeter) 2 2.5 5 Marking: ring at cathode end. Weight: 0.05g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 5/5