TMMBAT48FILM

TMMBAT 47 TMMBAT 48 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. MINIMELF (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Tl = 25 °C IFRM Repetitive Peak Fordward Current tp ≤ 1s δ ≤ 0.5 IFSM Surge non Repetitive Forward Current IF Ptot Power Dissipation Tstg Tj Storage and Junction Temperature Range TL Maximum Temperature for Soldering during 15s TMMBAT47 TMMBAT48 Unit 20 40 V 350 mA 1 A tp = 10ms 7.5 A tp = 1s 1.5 Tl = 25 °C 330 mW - 65 to 150 - 65 to 125 °C °C 260 °C Value Unit 300 °C/W THERMAL RESISTANCE Symbol Rth(j-l) Test Conditions Junction-leads August 1999 Ed: 1A 1/5 TMMBAT 47/TMMBAT 48 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF* IR* Test Conditions Min. Typ. Max. Tj = 25°C IR = 10µA TMMBAT47 20 Tj = 25°C IR = 25µA TMMBAT48 40 Tj = 25°C IF = 0.1mA All Types Tj = 25°C IF = 1mA 0.3 Tj = 25°C IF = 10mA 0.4 Tj = 25°C IF = 30mA Tj = 25°C IF = 150mA 0.8 Tj = 25°C IF = 300mA 1 Tj = 25°C IF = 50mA Tj = 25°C IF = 200mA 0.75 Tj = 25°C IF = 500mA 0.9 Tj = 25°C VR = 1.5V Unit V 0.25 TMMBAT47 V 0.5 TMMBAT48 0.5 All Types 1 µA 10 Tj = 60°C VR = 10V Tj = 25°C TMMBAT47 4 20 Tj = 60°C VR = 20V Tj = 25°C 10 30 Tj = 60°C VR = 10V Tj = 25°C TMMBAT48 2 15 Tj = 60°C VR = 20V Tj = 25°C 5 25 Tj = 60°C VR = 40V Tj = 25°C 25 50 Tj = 60°C DYNAMIC CHARACTERISTICS Symbol C trr Test Conditions Tj = 25°C VR = 0V Tj = 25°C VR = 1V Tj = 25°C * Pulse test: tp ≤ 300µs δ < 2%. 2/5 IF = 10mA VR = 1V Min. f = 1MHz Typ. 20 Max. Unit pF 12 irr = 1mA RL = 100Ω 10 ns TMMBAT 47/TMMBAT 48 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 3/5 TMMBAT 47/TMMBAT 48 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). 4/5 TMMBAT 47/TMMBAT 48 PACKAGE MECHANICAL DATA MINIMELF Glass DIMENSIONS A REF. /B O Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 3.30 3.40 3.6 0.130 0.134 0.142 B 1.59 1.60 1.62 0.063 0.063 0.064 C 0.40 0.45 0.50 0.016 0.018 0.020 D 1.50 0.059 C C FOOT PRINT DIMENSIONS (Millimeter) 2 2.5 5 Marking: ring at cathode end. Weight: 0.05g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 5/5