TMMDB3TG

TMMDB3TG Datasheet Diac in MINIMELF package with tight VBO Features • VBO: 32 V • • Low breakover voltage: 15 µA max. Breakover voltage range: 30 to 34 V Applications • • • • • • • MINIMELF General purpose AC line load switching Motor control circuits Home appliances Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with Triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. Product status link TMMDB3TG Product summary Order code VBO TMMDB3TG 30 - 34 V DS0700 - Rev 3 - May 2019 For further information contact your local STMicroelectronics sales office. www.st.com TMMDB3TG Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit 2 A ITRM Repetitive peak on-state current, tp = 20 µs, F = 120 Hz Tstg Storage junction temperature range -40 to +125 °C Operating junction temperature range -40 to +125 °C Tj Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol VBO I VBO1 - VBO2 I Parameter Breakover voltage(1) Breakover voltage symmetry voltage(1) Test conditions Value Unit Min. 30 Typ. 32 Max. 34 Max. 2 V VBO and VF at 10 mA Min. 9 V C = 10 nF(2) C = 10 nF(2) V ΔV Dynamic breakover VO Output voltage(1) See Figure 2. Test circuit , (R = 20 Ω) Min. 5 V IBO Breakover current(1) C = 10 nF(2) Max. 15 µA Rise time(1) See Figure 3. Rise time measurement Max. 2 µs VR = 0.5 x VBO max Max. 10 µA See Figure 2. Test circuit Min. 0.30 A tr IR Leakage IP Peak current(1) current(1) 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device Figure 1. Voltage - current characteristic curve. +IF 10 mA -V IBO IR 0,5 V BO ΔV VF +V VBO - IF DS0700 - Rev 3 page 2/9 TMMDB3TG Characteristics Figure 2. Test circuit 10 kΩ 220 V 500 kΩ D.U.T Rs = 0 C = 0.1 µF IP 50 Hz Vo T410 R = 20 Ω Figure 3. Rise time measurement lp 90 % 10 % tr DS0700 - Rev 3 page 3/9 TMMDB3TG Characteristics (curves) 1.1 Characteristics (curves) Figure 4. Relative variation of VBO versus junction temperature (typical values) 1,05 Figure 5. Peak on-state current versus Triac gate current pulse duration tp VBO [T j ] / V BO [T j =25 °C] ITRM(A) f =120 Hz Tj initial = 25°C 10.0 1,00 0,95 1.0 0,90 0,85 T j (°C) 0,80 -40 -20 0 20 40 60 80 100 tp(µs) 0.1 1 120 10 100 Figure 6. Triac gate current pulse duration tp (to have IP > 50 mA) versus Rs and C values (typical values) 50E-6 tp (s) 68 Ω 40E-6 47 Ω 30E-6 33 Ω 20E-6 22 Ω 10E-6 00E+0 10E-9 Note: DS0700 - Rev 3 0Ω 100E-9 10 Ω C (F) 1E-6 according to Figure 2. Test circuit page 4/9 TMMDB3TG Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 Minimelf package information Figure 7. MINIMELF package outline A ØB ØD C C Table 3. MINIMELF package mechanical data Dim. Min. Typ. Max. Min. Typ. Max. A 3.30 3.50 3.70 0.130 0.138 0.146 B 1.59 1.65 1.70 0.063 0.065 0.067 C 0.40 0.50 0.60 0.016 0.020 0.024 D DS0700 - Rev 3 mm 1.50 0.059 page 5/9 TMMDB3TG MINIMELF package information Figure 8. MINIMELF recommended footprint (dimensions are in mm) DS0700 - Rev 3 page 6/9 TMMDB3TG Ordering information 3 Ordering information Figure 9. Ordering information scheme TMM DB 3 TG MINIMELF Special VBO range Diac Series Breakover voltage 3: VBO typ = 32V Table 4. Ordering information DS0700 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode TMMDB3TG (None) Minimelf 0.04 g 2500 Tape and reel page 7/9 TMMDB3TG Revision history Table 5. Document revision history DS0700 - Rev 3 Date Version Changes January-2001 2 Previous release. 07-May-2019 3 Updated Section 1.1 Characteristics (curves) and Table 3. MINIMELF package mechanical data. Minor text change to improve readability. page 8/9 TMMDB3TG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS0700 - Rev 3 page 9/9