TN1205H-6G

TN1205H Datasheet High temperature 12 A SCRs Features A G K A A K A K G D²PAK A G TO-220AB • High junction temperature: Tj = 150 °C • • • • Medium current SCRs High noise immunity up to 150 °C RoHS (2002/95/EC) compliant 600 V VDRM, VRRM Applications • • • • • • General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in standard gate triggering levels, the TN1205H SCR series has very high switching capability up to a junction temperature of 150 °C. Product status link TN1205H Product summary VDRM, VRRM 600 V IGT 2 to 5 mA These products fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. These products are particulary adapted for use in areas where the ambient temperature is high or the ventilation low, or where an increase of power density is required. Through-hole or surface-mount packages provide performance in a limited space area. DS7117 - Rev 5 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com TN1205H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180° conduction angle)) IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current Value D2PAK, TO-220AB tp = 8.3 ms tp = 10 ms 12 Tc = 136 °C 7.6 126 Tj = 25 °C 120 Unit A A I2t value for fusing tp = 10 ms 72 A2s Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz Tj = 150 °C 100 A/µs Non Repetitive peak off-state voltage tp = 10 ms VDRM/VRRM +100 V Tj = 150 °C 4 A Tj = 150 °C 1 W 5 V Storage temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Value Unit I2t dl/dt VDSM/ VRSM IGM tp = 20 µs Peak gate current PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage Tstg Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT(1) Test conditions Max. 2 Max. 5 Max. 1.3 V VD = VDRM, RL = 3.3 kΩ Min. 0.2 V IG = 1.2 x IGT Max. 40 mA IT = 500 mA, gate open Max. 20 mA VD = 12 V, RL = 33 Ω VGT VGD IL IH (2) dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C Tj = 150 °C Min. 200 100 mA V/µs tgt ITM = 40 A, VD = 500 V, IG = 100 mA, dIG/dt = 5 A/μs Typ. 1.9 µs tq VDM = 335 V, Tj =125 °C, ITM = 20 A, VR = 25 V, (dIT/dt)Max = 30 A/μs, dVD/dt = 50 V/μs, RGK = 100 Ω Typ. 65 µs 1. Minimum IGT is guaranteed at 20% of IGT max. 2. For both polarities of A2 referenced to A1. DS7117 - Rev 5 page 2/14 TN1205H Characteristics Table 3. Static characteristics Symbol Test conditions Max. value Unit VT ITM = 24 A, tp = 380 µs Tj = 25 °C 1.6 V VTD Threshold voltage Tj = 150 °C 0.80 V RD Dynamic resistance Tj = 150 °C 30 mΩ Tj = 25 °C 5 µA Tj = 125°C 1 mA Tj = 150 °C 3 mA Value Unit 1.3 °C/W IDRM/IRRM VDRM = VRRM Table 4. Thermal resistance Symbol DS7117 - Rev 5 Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient DC (Scu = 1 cm2) D²PAK 45 TO-220AB 60 °C/W page 3/14 TN1205H Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus on-state RMS current P(W) 11 α = 180° 10 Figure 2. Average and DC on-state current versus case temperature 14 360° IT(AV) (A) D.C. 12 9 α 8 10 7 α = 180° 8 6 5 6 4 4 3 2 2 1 IT(AV) (A) 0 0 1 2 3 4 5 6 7 Figure 3. Average and DC on-state current versus ambient temperature 4.0 Tcase (°C) 0 8 IT(AV) (A) 0 10 3.0 1.00 SCU = 1 cm D²PAK D.C . α = 180° 2.0 40 50 60 70 80 90 100 110 120 130 140 150 K = [Z th / Rth ] Zth(j-c) α = 180° 2.5 30 Figure 4. Variation of thermal impedance versus pulse duration D.C . 3.5 20 D²PAK SCU = 1 cm 2 (Epoxy Fr4) 0.10 1.5 Zth(j-a) 2 TO-220AB TO220AB 1.0 0.5 TA (°C) 0.0 0 10 DS7117 - Rev 5 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0.01 1.0E-03 Tp (s) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 page 4/14 TN1205H Characteristics (curves) Figure 5. Relative variation of IGT,VGT, IH, IL versus junction temperature (typical values) 2.0 IGT,VGT,IH ,IL Tj ]/IGT,VGT,IH ,IL [Tj = 25 °C] 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.8 1.6 1.4 1.2 VGT 1.0 IH I L Rgk = 1 k Ω IGT 0.8 0.6 0.4 0.2 0.0 -40 Tj (°C) -20 0 20 40 60 80 100 120 140 Figure 7. Surge peak on-state current versus number of cycles 130 Figure 6. Relative variation of static dV/dt immunity versus junction temperature (typical values) dV/dt[T ]/dV/dt[T = j j 150 °C] VD = 0.67 x V DRM Tj (°C) 25 50 75 100 125 Figure 8. Non repetitive surge peak on-state current and corresponding value of I²t versus sinusoidal pulse width I (A),I²t (A²s) 10000 TSM dl /dt limitation: 100 A / µs ITSM(A) 150 Tj initial = 25 °C 120 110 tp = 20 ms 100 One cycle 90 1000 Non repetitive Tj initial = 25 °C 80 70 ITSM 60 50 100 40 30 Repetitive Tc = 136 °C 20 10 I²t Sinusoidal pulse with width t p