TN1215-G

® TN1215-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TN1215 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to 400Hz on resistive or inductive load. A A K G D2PAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conductionangle) Average on-state current (180° conductionangle) Non repetitive surge peak on-state current (Tj initial = 25°C) It dI/dt T stg Tj Tl 2 Value Tc= 110°C Tc= 110 °C tp = 8.3 ms tp = 10 ms tp = 10ms 12 8 146 140 98 100 - 40 to + 150 - 40 to + 125 260 Unit A A A I t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/µs. IG = 100 mA Storage junction temperature range Operating junction temperature range 2 A2s A/µs °C °C Maximum temperature for soldering during 10s Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125 °C TN1215600G 600 800G 800 Unit V January 1998 - Ed: 4 1/5 TN1215-G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=1cm2) Junction to case for D.C Value 45 1.3 Unit °C/W °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD = 12V (DC) RL= 33Ω Tj= 25°C Type MIN MAX VGT VGD IH IL VTM IDRM IRRM dV/dt VD = 12V (DC) RL= 33Ω VD = VDRM RL = 3.3kΩ IT= 100mA IG = 1.2 IGT ITM= 24A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open Gate open Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C MAX MIN MAX MAX MAX MAX MAX MIN Value 2 15 1.3 0.2 30 60 1.5 5 3 200 V V mA mA V µA mA V/µs Unit mA IGM = 4 A (tp = 20 µs) VRGM = 5 V ORDERING INFORMATION Add ”-TR” suffix for Tape & Reel shipment TN SCR CURRENT 2/5 12 15 - 600 G PACKAGES : G: D2PAK SENSITIVITY VOLTAGE ® TN1215-G Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase ) for different thermal resistances heatsink+contact. P(W) 14 α=180 ° α=120 ° α=60 ° α=30 ° α=90 ° D.C. P(W) 14 12 10 8 6 4 2 0 0 2 4 IT(AV)(A) 6 8 10 12 Tcase (°C) 12 10 8 Rth=8° C/W Rth=5° C/W Rth=3° C/W Rth=0° C/W 110 115 6 4 2 0 0 20 40 60 80 100 120 140 α =180° 120 Tamb(°C) 125 Fig. 3: Average and D.C. on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(AV)(A) 14 12 10 α=180° D.C. K=[Zth/Rth] 1.00 Zth(j-c) 8 0.10 Zth(j-a) 6 4 2 0 0 25 Tcase( °C) 50 75 100 125 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.5 2.0 1.5 IGT ITSM(A) 160 Tj initial=25 C ° F=50Hz 120 80 1.0 0.5 IH 40 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 Number of cycles 10 100 1000 3/5 ® TN1215-G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp