TN1605H-6T

TN1605H-6T High temperature 16 A SCRs Datasheet - production data Applications A      G K A Motorbikes voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays Description K A G Designed with high immunity switching to external surges, the device offers robust switching up to its 150 °C maximum Tj. TO-220AB The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. Features       High junction temperature: Tj = 150 °C Gate triggering current IGT = 6 mA High noise immunity dV/dt = 200 V/μs up to 150 °C Blocking voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt: 100 A/μs ECOPACK®2 compliant component May 2017 Table 1: Device summary Order code Package VDRM/VRRM IGT TN1605H-6T TO-220AB 600 6 mA DocID030160 Rev 1 This is information on a product in full production. 1/9 www.st.com Characteristics 1 TN1605H-6T Characteristics Table 2: Absolute maximum ratings (limiting values, Tj = 25 °C unless otherwise specified) Symbol Parameter IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180° conduction angle) ITSM I2 t dl/dt Non repetitive surge peak on-state current tp = 8.3 ms I2t value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns, tp = 10 ms VDRM/VRRM Repetitive peak off-state voltage VDSM/VRSM Non repetitive surge peak off-state voltage PG(AV) VRGM Value Unit Tc = 133 °C 16 A Tc = 133 °C 10 Tc = 138 °C 8 Tc = 142 °C 6 153 Tj initial = 25 °C A 140 98 A2s f = 60 Hz 100 A/µs Tj = 150 °C 600 V 700 V 1 W 5 V tp = 10 ms Average gate power dissipation A Tj = 150 °C Maximum peak reverse gate voltage IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A PGM Peak gate power dissipation tp = 20 µs Tj = 150 °C 40 W PG(AV) 1 W Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Tstg Average gate power dissipation Tj = 150 °C Table 3: Dynamic characteristics Symbol IGT Parameter VD = 12 V, RL = 33 Ω Tj 25 °C VGT VGD 2/9 VD = 600 V, RL = 3.3 kΩ 150 °C Value Min. 3.5 Unit Typ. 4.5 Max. 6 mA Max. 1.3 V Min. 0.15 V Max. 40 Max. 20 IL IG = 1.2 x IGT IH IT = 500 mA, gate open dV/dt VD = 402 V, gate open 150 °C Min. 200 V/µs tgt ITM = 32 A, VD = 402 V, IG = 12 mA, (dIG/dt) max = 0.2 A/μs 25 °C Typ. 1.9 µs tq ITM = 32 A, VD = 402 V, (dl/dt)off = 30 A/μs, VR = 25 V, dVD/dt = 20 V/μs 150 °C Typ. 70 µs DocID030160 Rev 1 25 °C mA TN1605H-6T Characteristics Table 4: Static electrical characteristics Symbol Test Conditions Tj Value Unit VTM ITM = 32 A, tp = 380 µs 25 °C Max. 1.6 V VTO Threshold on-state voltage 150 °C Max. 0.82 V RD Dynamic resistance 150 °C Max. 25 mΩ 5 µA VDRM = VRRM 125 °C Max. 1.5 25 °C IDRM/IRRM 150 °C 3.1 mA Table 5: Thermal resistance Symbol Parameter Value Rth(j-c) Junction to case (DC) 1.1 Rth(j-a) Junction to ambient (DC) 60 DocID030160 Rev 1 Unit °C/W 3/9 Characteristics 1.1 TN1605H-6T Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and DC on-state current versus case temperature P(W) 18 20 16 α = 180 ° 16 α = 90 ° 12 14 α = 60 ° 12 α = 30 ° 10 α = 180 ° 10 8 α = 120 ° 8 6 α = 90 ° α = 60 ° 6 4 360 ° 2 0 DC 18 DC α = 120 ° 14 IT(AV) (A) 2 IT(AV) (A) α 0 5 10 Tc(°C) 0 15 Figure 3: Average and DC on-state current versus ambient temperature 3.0 α = 30 ° 4 IT(AV) (A) 0 25 50 75 100 125 150 Figure 4: Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth/ Rth] Z th(j-c) 2.5 DC 2.0 Zth(j-a) α = 180 ° 1.0E-01 1.5 1.0 0.5 tP(s) Ta(°C) a 0.0 0 25 50 75 100 125 150 Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) 2.5 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) 2.5 IH, IL [ Tj ] / IH, IL [ Tj = 25 °C] 2.3 2.0 2.0 I I L 1.8 GT 1.5 1.5 I H 1.3 1.0 1.0 VGT 0.8 0.5 0.0 -50 4/9 0.5 0.3 Tj(°C) -25 0 25 50 75 100 125 150 0.0 -50 DocID030160 Rev 1 T (°C) j -25 0 25 50 75 100 125 150 TN1605H-6T Characteristics Figure 7: Relative variation of static dV/dt immunity versus junction temperature (typical values) 6 Figure 8: Surge peak on-state current versus number of cycles I (A) 150 TSM dV/dt [Tj] / dV/dt [Tj= 150 °C] VD = VR = 402 V Non repetitive T = 25 °C j 5 tp=10ms Above test equipment capability One cycle 100 4 3 50 2 Repetitive Tc = 133 °C 1 Tj (°C) Number of cycles 0 0 25 50 75 100 125 150 1 Figure 9: Non repetitive surge peak on-state current versus sinusoidal pulse width (tP < 10 ms). 10 100 1000 Figure 10: On-state characteristics (maximum values) Figure 11: Relative variation of leakage current versus junction temperature (tP < 10ms) 1.E+00 IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ] V DRM = V RRM = 600 V 1.E-01 1.E-02 1.E-03 T (°C) j 1.E-04 25 50 75 100 DocID030160 Rev 1 125 150 5/9 Package information 2 TN1605H-6T Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL 94,V0 Lead-free package TO-220AB (NIns. and Ins.) package information Figure 12: TO-220AB (NIns. & Ins.) package outline 6/9 DocID030160 Rev 1 TN1605H-6T Package information Table 6: TO-220AB (NIns. & Ins.) package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 Max. Min. 15.90 0.5984 3.75 a1 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 16.40 2.6 M 0.6457 0.6614 0.1024 Notes: (1)Inch dimensions are for reference only. DocID030160 Rev 1 7/9 Ordering information 3 TN1605H-6T Ordering information Figure 13: Ordering information scheme TN 16 05 H - 6 T Series TN = SCR RMS current 16 = 16 A Gate sensitivity 05 = 6 mA High temperature Voltage 6 = 600 V Pack age T = TO-220AB Delivery mode Blank = tube Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode TN1605H-6T TN1605H6 TO-220AB 2.3 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision 19-May-2017 1 DocID030160 Rev 1 Changes Initial release. TN1605H-6T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030160 Rev 1 9/9