TN1610H-6T

TN1610H-6T Datasheet High temperature 16 A 600 V TO220 thyristor SCRs Features A G K A • High junction temperature: Tj = 150 °C • • High noise immunity dV/dt = 1000V/µs up to 150 °C Gate triggering current IGT = 10 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/µs • ECOPACK®2 compliant Applications K A • • • • G TO-220AB Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Solid state relays Description Thanks to a junction temperature Tj up to 150 °C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation up to 16 A rms. The trade-off between the device’s noise immunity (dV/dt = 1 kV/μs), its gate triggering current (IGT = 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. Product status TN1610H-6T Product summary Order code TN1610H-6T Package TO-220AB VDRM/VRRM 600 V IGT 10 mA DS10821 - Rev 2 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com TN1610H-6T Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Value Unit Tc = 133 °C 16 A Tc = 133 °C 10 Tc = 138 °C 8 Tc = 142 °C 6 tp = 8.3 ms 153 tp = 10 ms 140 tp = 10 ms 98 A2s f = 60 Hz 100 A/µs 600 V Tj = 150 °C 4 A Tj = 150 °C 1 W Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C Tl Maximum lead temperature soldering during 10 s 260 °C IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t value for fusing, (Tj initial = 25 °C) I2t IG = 2 x IGT, tr ≤ 100 ns dl/dt Critical rate of rise of on-state current VDRM/VRRM IGM PG(AV) Tstg Parameter Repetitive peak off-state voltage tp = 20 µs Peak gate current Average gate power dissipation A A Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT Test conditions Value VD = 12 V, RL = 33 Ω VGT DS10821 - Rev 2 Typ. 4.5 Max. 10 Max. 1.3 V Min. 0.2 V mA VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 30 mA IL IG = 1.2 x IGT Max. 60 mA Min. 1000 V/µs Typ. 1.9 µs Typ. 70 µs dV/dt VD = 402 V, gate open tgt IT = 32 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs tq IT = 32 A, VD = 402 V, (dlT/dt)OFF = 30 A/µs, VR = 25 V, dVD/dt = 40 V/µs Tj = 150 °C Unit Tj = 150 °C Tj = 150 °C page 2/11 TN1610H-6T Characteristics Table 3. Static characteristics Symbol Test conditions Value Unit VTM IT = 32 A, tp = 380 µs Tj = 25 °C Max. 1.60 VTO Threshold voltage Tj = 150 °C Max. 0.82 RD Dynamic resistance Tj = 150 °C Max. 25 mΩ 5 µA 1.5 mA IDRM, IRRM Tj = 25 °C VD = VDRM; VR = VRRM Max. Tj = 150 °C V Table 4. Thermal parameters Symbol DS10821 - Rev 2 Parameter Value Rth(j-c) Junction to case (DC) Max. 1.1 Rth(j-a) Junction to ambient (DC) Typ. 60 Unit °C/W page 3/11 TN1610H-6T Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum power dissipation versus average onstate current 18 P(W) 20 16 α = 180 ° 14 α = 60 ° 12 α = 30 ° 10 α = 180 ° 10 8 α = 120 ° 8 6 α = 90 ° α = 60 ° 6 4 2 IT(AV) (A) α 0 α = 30 ° 4 360 ° 2 5 10 15 Figure 3. Average and D.C. on state current versus ambient temperature 3.0 DC 16 α = 90 ° 12 IT(AV) (A) 18 DC α = 120 ° 14 0 Figure 2. Average and DC on-state current versus case temperature IT(AV) (A) Tc(°C) 0 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth/ Rth] Zth(j-c) 2.5 DC 2.0 Zth(j-a) α = 180 ° 1.5 1.0E-01 1.0 0.5 tP(s) Ta(°C) 0.0 0 25 50 75 100 125 150 Figure 5. Relative variation of gate triggering current and gate voltage versus junction temperature (typical values) 2.5 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C] 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Relative variation of holding and latching current versus junction temperature (typical values) I , I [ T ] / IH, IL [ Tj = 25 °C] 2.5 H L j 2.3 2.0 2.0 I I L 1.8 GT 1.5 1.5 I H 1.3 1.0 1.0 VGT 0.8 0.5 0.5 0.0 -50 0.3 Tj(°C) -25 DS10821 - Rev 2 0 25 50 75 100 125 150 0.0 -50 Tj(°C) -25 0 25 50 75 100 125 150 page 4/11 TN1610H-6T Characteristics (curves) Figure 7. Relative variation of static dV/dt immunity versus junction temperature (typical values) 6 Figure 8. Surge peak on-state current versus number of cycles I (A) 150 TSM dV/dt [Tj] / dV/dt [Tj= 150 °C] V = V = 402 V D R Non repetitive Tj = 25 °C 5 tp=10ms Above test equipment capability 4 One cycle 100 3 2 50 Repetitive Tc = 133 °C 1 0 Tj (°C) 25 50 75 Number of cycles 100 125 0 150 1 Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 100 1000 Figure 10. On-state characteristics (maximum values) I (A) 10000 TSM 1000 dl/dt limitation: 100 A/µs 10 ITM(A) Tj max: Vt0 = 0.82 V Rd = 25 mΩ Tj initial = 25 °C 100 1000 ITSM 10 100 Tj = 150 °C 10 0.01 0.10 1.00 Tj = 25 °C 1 0.0 tp(ms) 10.00 1.0 2.0 VTM(V) 3.0 4.0 Figure 11. Relative variation of leakage current versus junction temperature (tp < 10 ms) 1.E+00 IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ] VDRM = VRRM = 600 V 1.E-01 1.E-02 1.E-03 1.E-04 25 DS10821 - Rev 2 Tj(°C) 50 75 100 125 150 page 5/11 TN1610H-6T Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DS10821 - Rev 2 TO-220AB package information • • Molding compound resin is halogen-free and meets UL standard level V0 Lead-free package leads finishing • • ECOPACK®2 compliant Recommended torque: 0.4 to 0.6 N.m page 6/11 TN1610H-6T TO-220AB insulated package information Figure 12. TO-220AB insulated package outline C B b2 I Resin gate 0.5 mm max. protusion(1) L F A I4 l3 c2 a1 l2 a2 M b1 e Resin gate 0.5 mm max. protusion(1) c1 (1)Resin gate position accepted in one of the two positions or in the symmetrical opposites. DS10821 - Rev 2 page 7/11 TN1610H-6T TO-220AB insulated package information Table 5. TO-220AB insulated package mechanical data Dimensions Ref. Min. A Inches(1) Millimeters Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS10821 - Rev 2 page 8/11 TN1610H-6T Ordering information 3 Ordering information Figure 13. Ordering information scheme TN 16 10 H - 6 T Series TN = SCR Rms current 16 = 16 A Gate sensitivity 10 = 10 mA High temperature Voltage 6 = 600 V Package T = TO-220AB Delivery mode Blank = tube Table 6. Ordering information DS10821 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode TN1610H-6T TN1610H6 TO-220AB 2.3 g 50 Tube page 9/11 TN1610H-6T Revision history Table 7. Document revision history DS10821 - Rev 2 Date Revision Changes 24-Feb-2015 1 Initial release. 22-Feb-2019 2 Updated Table 4. Thermal parameters. page 10/11 TN1610H-6T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10821 - Rev 2 page 11/11