TN2010H-6G
High temperature 20 A SCRs
Datasheet - production data
Applications
A
G
K
A
Description
A
This device offers high thermal performance
during operation of up to 20 ARMS, thanks to a
junction temperature of up to 150 °C.
K
G
D²PAK
Its D²PAK package allows modern SMD designs
as well as compact back to back configuration.
Features
High junction temperature: Tj = 150 °C
High noise immunity dV/dt = 400 V/µs up to
150 °C
Gate triggering current IGT = 10 mA
Peak off-state voltage VDRM/VRRM = 600 V
High turn on current rise dI/dt = 100 A/µs
ECOPACK®2 compliant component
August 2017
Motorbike voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
The combination of noise immunity and low gate
triggering current allows to design strong and
compact control circuits.
Table 1: Device summary
Order code
Package
VDRM/VRRM
IGT
TN2010H-6G
D²PAK
600 V
10 mA
DocID030740 Rev 1
This is information on a product in full production.
1/10
www.st.com
Characteristics
1
TN2010H-6G
Characteristics
Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
Tc = 132 °C
20
A
Tc = 132 °C
12.7
Tc = 137 °C
10
Tc = 140 °C
8
Non repetitive surge peak on-state current
(Tj initial = 25 °C)
tp = 8.3 ms
197
tp = 10 ms
180
I2t value for fusing
tp = 10 ms
162
A2s
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
f = 60 Hz
100
A/µs
Non repetitive surge peak off-state voltage
tp = 10 ms
700
V
Peak gate current
Tj = 150 °C
4
A
Tj = 150 °C
1
W
IT(RMS)
RMS on-state current
(180 ° conduction angle)
IT(AV)
Average on-state current
(180 ° conduction angle)
ITSM
I2 t
dl/dt
VDSM/VRSM
IGM
tp = 20 µs
A
A
PG(AV)
Average gate power dissipation
VRGM
Maximum peak reverse gate voltage
5
V
Tstg
Storage junction temperature range
-40 to +150
°C
Operating junction temperature range
-40 to +150
°C
Tj
Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
IGT
Test conditions
Value
VD = 12 V, RL = 33 Ω
VGT
Typ.
5
Max.
10
Max.
1.3
V
Min.
0.1
V
mA
VGD
VD = VDRM, RL = 3.3 kΩ
IH
IT = 500 mA, gate open
Max.
40
mA
IL
IG = 1.2 x IGT
Max.
60
mA
Min.
400
V/µs
dV/dt
2/10
Unit
VD = 402 V, gate open
Tj = 150 °C
Tj = 150 °C
tgt
ITM = 40 A, VD = 402 V, IG = 20 mA, (dIG/dt) max = 0.2 A/µs
Typ.
1.9
µs
tq
ITM = 40 A, VD = 402 V, (dI/dt)off = 30 A/µs, VR =
25 V, dVD/dt = 40 V/µs
Typ.
70
µs
DocID030740 Rev 1
Tj = 150 °C
TN2010H-6G
Characteristics
Table 4: Static characteristics
Symbol
Value
Test conditions
Unit
VTM
ITM = 40 A, tp = 380 µs
Tj = 25 °C
Max.
1.6
VTO
Threshold voltage
Tj = 150 °C
Max.
0.82
RD
Dynamic resistance
Tj = 150 °C
Max.
17.5
mΩ
5
µA
Tj = 25 °C
IDRM, IRRM
VD = VDRM, VR = VRRM
Tj = 125 °C
Max.
Tj = 150 °C
2
3.9
V
mA
Table 5: Thermal parameters
Symbol
Rth(j-c)
Rth(j-a)
Parameter
Value
Junction to case (DC)
Junction to ambient (DC)
S(1)
= 2.5 cm2
Max.
1.0
Typ.
45
Unit
°C/W
Notes:
(1)S
= Copper surface under tab
DocID030740 Rev 1
3/10
Characteristics
1.1
TN2010H-6G
Characteristics (curves)
Figure 1: Maximum power dissipation versus
average on-state current
20
Figure 2: Average and DC on-state current versus
case temperature
P(W)
α = 180 °
18
DC
α = 120 °
α = 90 °
α = 60 °
16
14
α = 30 °
12
10
8
6
360 °
4
2
0
IT(AV) (A)
α
0
5
10
15
20
Figure 3: Average and D.C. on state current versus
ambient temperature
24
22
20
18
16
14
12
10
8
6
4
2
0
I
(A)
T(AV)
DC
α = 180 °
α = 120 °
α = 90 °
α = 60 °
α = 30 °
T (°C)
c
0
25
50
75
100
125
150
Figure 4: Relative variation of thermal impedance
versus pulse duration
K = [Zth/ Rth]
1.0E+00
IT(AV) (A)
3.0
Z
th(j-c)
2.5
DC
2.0
Z
th(j-a)
α = 180 °
1.0E-01
1.5
1.0
0.5
0.0
tP(s)
Ta(°C)
a
0
25
50
75
100
125
150
Figure 5: Relative variation of gate triggering
current and gate voltage versus junction
temperature (typical values)
2.5
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]
2.5
2.0
IH, IL [ Tj ] / IH, IL [ Tj = 25 °C]
2.0
I
1.5
I
H
I
GT
1.5
1.0
V
L
1.0
GT
0.5
0.5
T (°C)
0.0
-50
4/10
Tj(°C)
j
-25
0
25
50
75
100
125
150
0.0
-50
DocID030740 Rev 1
-25
0
25
50
75
100
125
150
TN2010H-6G
Characteristics
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
16
Figure 8: Surge peak on-state current versus
number of cycles
ITSM(A)
200
dV/dt [T j] / dV/dt [T j=150 °C]
Non repetitive T = 25 °C
j
VD = 402 V
14
tp=10ms
150
12
Above test equipment capability
One cycle
10
8
100
6
Repetitive T = 132 °C
c
4
50
2
Tj(°C)
0
25
50
75
100
125
150
Number of cycles
0
1
100
1000
Figure 10: On-state characteristics
(maximum values)
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
10000
10
ITSM(A)
dl/dt limitation: 100 A/µs
T initial = 25 °C
j
1000
I
TSM
100
t (ms)
p
10
0.01
0.10
1.00
10.00
Figure 11: Relative variation of leakage current
versus junction temperature
1.E+00
Figure 12: Thermal resistance junction to ambient
versus copper surface under tab (typical values)
IDRM, IRRM [ Tj ] / IDRM , IRRM [ Tj = 150 °C ]
80
Rth(j-a) (°C/W)
70
V
= V
= 600 V
DRM
RRM
1.E-01
60
50
1.E-02
40
30
20
1.E-03
1.E-04
25
Epoxy printed board FR4, eCU= 35 µm
10
Tj(°C)
50
75
100
125
SCu(cm²)
150
0
DocID030740 Rev 1
0
5
10
15
20
25
30
35
5/10
40
Package information
2
TN2010H-6G
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Epoxy meets UL94, V0
Lead-free, halogen-free package
D²PAK package information
Figure 13: D²PAK package outline
6/10
DocID030740 Rev 1
TN2010H-6G
Package information
Table 6: D²PAK package mechanical data
Dimensions
Ref.
Inches(1)
Millimeters
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.1693
0.1811
A1
2.49
2.69
0.0980
0.1059
A2
0.03
0.23
0.0012
0.0091
A3
0.0098
0.25
b
0.70
0.93
0.0276
0.0366
b2
1.25
1.7
0.0492
0.0669
c
0.45
0.60
0.0177
0.0236
c2
1.21
1.36
0.0476
0.0535
D
8.95
9.35
0.3524
0.3681
D1
7.50
8.00
0.2953
0.3150
D2
1.30
1.70
0.0512
0.0669
e
2.54
E
10.00
10.28
0.3937
0.4047
E1
8.30
8.70
0.3268
0.3425
E2
6.85
7.25
0.2697
0.2854
G
4.88
5.28
0.1921
0.2079
H
15
15.85
0.5906
0.6240
L
1.78
2.28
0.0701
0.0898
L2
1.27
1.40
0.0500
0.0551
L3
1.40
1.75
0.0551
R
V2
0.1
0.40
0°
0.0689
0.0157
8°
0°
8°
Notes:
(1)Dimensions
in inches are given for reference only
DocID030740 Rev 1
7/10
Package information
TN2010H-6G
Figure 14: D²PAK recommended footprint (dimensions are in mm)
8/10
DocID030740 Rev 1
TN2010H-6G
3
Ordering information
Ordering information
Figure 15: Ordering information scheme
TN 20 10
G
H - 6
Series
TN = SCR
Current
20 = 20 A
Gate sensitivity
10 = 10 mA
High temperature
H = 150 °C
Voltage
6 = 600 V
Package
G = D²PAK
Packing mode
Blank = tube
-TR = Tape and reel
Table 7: Ordering information
Order code
TN2010H-6G
TN2010H-6G-TR
4
Marking
Package
Weight
TN2010H6
D²PAK
2.3 g
Base qty.
Delivery mode
50
Tube
1000
Tape and reel
Revision history
Table 8: Document revision history
Date
Revision
24-Aug-2017
1
DocID030740 Rev 1
Changes
Initial release.
9/10
TN2010H-6G
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
10/10
DocID030740 Rev 1
很抱歉,暂时无法提供与“TN2010H-6G”相匹配的价格&库存,您可以联系我们找货
免费人工找货