TN22-1200

® TN22 STARTLIGHT Application Specific Discretes A.S.D.™ FEATURES n n 2, TAB 3 1 n High clamping voltage structure (1200 - 1500V) Low gate triggering current for direct drive from line (< 1.5mA) High holding current (> 175mA), ensuring high striking energy. 1 2 3 TAB TAB DESCRIPTION The TN22 has been specifically developed for use in electronic starter circuits. Use in conjunction with a sensitive SCR and a resistor, it provides high energy striking characteristics with low triggering power. Thanks to its electronic concept, this TN22 based starter offers high reliability levels and extended life time of the fluorescent tubelamps. ABSOLUTE RATINGS (limiting values) Symbol VDRM IT(RMS) IT(AV) ITSM Parameter Repetitive peak off-state voltage RMS on-state current Full sine ware (180° conduction angle) Mean on-state current Full sine ware (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 5 mA dIG /dt = 70 mA/µs. 1 2 3 DPAK (TN22-B) IPAK (TN22-H) Value Tj = 110°C Tc= 95°C Tc= 95°C tp = 8.3ms tp = 10ms 400 2 1.8 22 20 2 50 - 40 to + 150 - 40 to + 110 260 Unit V A A A I2t dI/dt Tstg Tj Tl tp = 10ms A 2s A/µs °C °C Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case October 2000 - Ed:1 1/7 TN22 THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case Parameters Value 100 3 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 300 mW PGM = 2 W (tp = 20 µs) IFGM = 1 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT IH VTM IDRM dV/dt Test conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω RGK = 1 KΩ VGK = 0V ITM= 2A tp= 380µs VDRM Rated Linear slope up to VD=67%VDRM VGK = 0V Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 110°C Type MAX MAX MIN MAX MAX MIN Value 1.5 3 175 3.1 0.1 500 Unit mA V mA V mA V/µs VRGM = 6V Symbol Test conditions Type Value TN22-1500 Unit VBR ID= 5mA VGK = 0V Tj = 25°C MIN MAX 1200 1500 V V 2/7 TN22 This thyristor has been designed for use as a fluorescent tube starter switch. An electronic starter circuit provides : s A pre-heating period during which a heating current is applied to the cathode heaters. s One or several high voltage striking pulses across the lamp. BASIC APPLICATION DIAGRAM INDUCTANCE BALLAST STARTER CIRCUIT AC VOLTAGE FLUORESCENT TUBE R TN22 S CONTROLLER (TIMER) PRINCIPLE OF OPERATION 1/ Pre-heating At rest the switch S is opened and when the mains voltage is applied across the circuit a full wave rectified current flows through the resistor R and the TN22 gate : at every half-cycle when this current reaches the gate triggering current (IGT) the thyristor turns on. When the device is turned on the heating current, limited by the ballast choke, flows through the tube heaters. The pre-heating time is typically 2 or 3 seconds. 2/ Pulsing At the end of the pre-heating phase the switch S is turned on. At this moment : If the current through the devices is higher than the holding current (IH) the thyristor remains on until the current falls below IH. Then the thyristor turns off. If the current is equal or lower than the holding current the thyristor turns off instantaneously. When the thyristor turns off the current flowing through the ballast choke generates a high voltage pulse. This overvoltage is clamped by the thyristor avalanche characteristic (VBR). If the lamp is not struck after the first pulse, the system starts a new ignition sequence again. 3/ Steady state When the lamp is on the running voltage is about 150V and the starter switch is in the off-state. IMPLEMENTATION The resistor R must be chosen to ensure a proper triggering in the worst case (minimum operating temperature) according to the specified gate triggering current and the peak line voltage. Switch S : This function can be realized with a gate sensitive SCR type : P0130AA 1EA3 This component is a low voltage device (< 50V) and the maximum current sunk through this switch can reach the level of the thyristor holding current. The pre-heating period can be determined by the time constant of a capacitor-resistor circuit charged by the voltage drop of diodes used in series in the thyristor cathode. 3/7 TN22 Fig.1 : Maximum average power dissipation versus average on-state current (rectified full sine wave). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. PT(av) (W) 6 = 180 o o PT(av) (W) 6 5 = 120 Rth=8 o C/W Rth=4 o C/W Rth=0 o C/W 5 Rth=12 oC/W 4 3 2 1 = 30 = 60 o = 90 o o 4 3 2 = 180 o I T(av) (A) 0 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0 10 20 30 40 Tcase ( C) o 50 60 70 80 90 100 110 Fig.3 : Average on-state current versus case temperature (rectified full sine wave). Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. I T(av) (A) Zth(j-a)(oC/W) 1.0E+02 2.0 1.8 o 1.6 = 180 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 10 20 1.0E+01 1.0E+00 Tcase ( C) o 30 40 50 60 70 80 90 100 110 1.0E-01 1.0E-02 tp(S) 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] Ih[Tj=25 o C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 20 18 16 14 12 10 8 6 4 2 Tj initial = 25oC F = 50Hz 3.0 2.5 2.0 1.5 Ih Igt 1.0 0.5 Tj(oC) Number of cycles 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 4/7 TN22 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp = 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) 100 Tj initial = 25 C o Fig.8 : On-state characteristics (maximum values). VTM (V) 8 7 6 5 Tj=110 oC Vto =2.50V Rt =0.235 Tj=110 oC I TSM 10 4 3 I2 t Tj=25 oC 2 1 I TM (A) 1 10 20 1 1 tp(ms) 10 0 0.1 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Fig.10 : Maximum allowable RMS current versus time conduction and initial case temperature. Note : Calculation made fot Tj max = 135°C (the failure mode will be short circuit) 500 IH (mA) Tj=25 oC 11 10 9 IT(rms) (A) Tc initial = 25 oC 100 8 7 6 Tc initial = 45 oC 10 5 4 3 Rgk( ) 2 1000 Tc initial = 65 oC tp(s) 1 10 100 1 1 10 100 1 0.1 ORDERING INFORMATION TN STARTLIGHT DEVICE IT(RMS) MAX 2: 2 A 2 2 - 1500 B PACKAGE: B: DPAK H: IPAK (-TR) VBR max: 1500: 1500V IGT MAX 2: 1.5 mA PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel 5/7 TN22 PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6.0 6.4 4.4 9.35 0.6 0° Max 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 1.0 8° Inches Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.023 0° Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.039 8° 0.80 typ. 0.031 typ. FOOTPRINT 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/7 TN22 PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.7 1.3 0.027 0.051 0.64 0.9 0.025 0.035 5.2 5.4 0.204 0.212 0.85 0.033 0.3 0.035 0.95 0.037 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 15.9 16.3 0.626 0.641 9 9.4 0.354 0.370 0.8 1.2 0.031 0.047 0.8 1 0.031 0.039 10° 10° A E B2 L2 C2 D H L L1 B6 B3 B V1 A1 B5 G C A3 OTHER INFORMATION Type TN22-1500B TN22-1500B-TR TN22-1500H Marking TN221500 TN221500 TN221500 Package DPAK DPAK IPAK Weight 0.3 g 0.3 g 0.4 g Base Qty 75 2500 75 Delivery mode Tube Tape & Reel Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7