TN5015H-6G-TR

TN5015H-6G High temperature 50 A SCRs Datasheet - production data Description A Thanks to its junction temperature Tj up to 150 °C, the device offers high thermal performance operation up to 50 A. Its D²PAK package allows modern SMD designs as well as compact back to back configuration. G K A Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allow to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, inrush current limiting circuits. A K G D²PAK Features       High junction temperature: Tj = 150 °C High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA Peak off-state voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component Table 1: Device summary Order code Package VDRM/VRRM IGT TN5015H-6G D²PAK 600 V 15 mA Applications     Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Solid state relays June 2017 DocID030697 Rev 1 This is information on a product in full production. 1/9 www.st.com Characteristics 1 TN5015H-6G Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit Tc = 120 °C 50 A Tc = 122 °C 30 Tc = 128 °C 25 Tc = 134 °C 20 tp = 8.3 ms 493 tp = 10 ms 450 I2t value for fusing tp = 10 ms 1012 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz 100 A/µs Repetitive peak off-state voltage Tj = 150 °C 600 V Non repetitive surge peak off-state voltage tp = 10 ms VDRM/VRRM + 100 V Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM I2 t dl/dt VDRM/VRRM VDSM/VRSM IGM Non repetitive surge peak on-state current tp = 20 µs A A PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Maximum operating junction temperature -40 to +150 °C Tj Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VGT VD = 12 V, RL = 33 Ω VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open IL IG = 1.2 x IGT dV/dt 2/9 Test conditions VD = 402 V, gate open Tj = 150 °C Tj = 150 °C Value Unit Max. 15 mA Max. 1.3 V Min. 0.15 V Max. 60 mA Max. 80 mA Min. 500 V/µs tgt ITM = 100 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs Typ. 1.9 µs tq ITM = 100 A, VD = 402 V, (dI/dt)off = 30 A/µs, VR = 25 V, dVD/dt = 50 V/µs Typ. 85 µs DocID030697 Rev 1 Tj = 150 °C TN5015H-6G Characteristics lTable 4: Static characteristics Symbol Value Test conditions VTM ITM = 100 A, tp = 380 µs Tj = 25 °C Max. 1.65 VTO Threshold voltage Tj = 150 °C Max. 0.85 RD Dynamic resistance Tj = 150 °C Max. 9 IDRM, IRRM Tj = 25 °C VD = VDRM = VRRM Tj = 150 °C Max. Unit V mΩ 10 µA 6 mA Table 5: Thermal parameters Symbol Rth(j-c) Rth(j-a) Parameter Value Junction to case (DC) Junction to ambient (DC) S(1) = 1 cm² Max. 0.6 Typ. 45 Unit °C/W Notes: (1)S = Copper surface under tab DocID030697 Rev 1 3/9 Characteristics 1.1 TN5015H-6G Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and DC on-state current versus case temperature IT(AV)(A) P(W) 50 α = 120° D.C α = 180° 60 α = 90 ° 40 α = 60° α = 30° α = 60 ° α = 90° α = 120° α = 180° D.C 50 α = 30 ° 40 30 30 20 20 10 10 IT(AV) (A) TC(°C) 0 0 0 5 10 15 20 25 30 35 40 45 50 Figure 3: Average and D.C. on state current versus ambient temperature 3.0 IT(AV)(A) 0 25 50 75 100 125 150 Figure 4: Relative variation of thermal impedance versus pulse duration 1.0E+00 K=[Z th /Rth ] Zth(j-c) 2.5 D.C 2.0 Zth(j-a) 1.0E-01 α = 180 ° 1.5 1.0 1.0E-02 0.5 TA(°C) tp(s) 0.0 0 25 50 75 100 125 150 Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) IGT,VGT [T j ] / I GT,VGT [T j =25 °C] 1.0E-03 1.0E-03 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) 2.5 2.5 1.0E-02 IH , IL[T j ]/ IH , IL[T j =25 °C] 2.3 IGT 2.0 2.0 IH 1.8 1.5 1.5 1.3 1.0 VGT 1.0 IL 0.8 0.5 0.5 0.3 Tj (°C) 0.0 -50 4/9 -25 0 25 50 75 100 125 150 0.0 -50 DocID030697 Rev 1 Tj (°C) -25 0 25 50 75 100 125 150 TN5015H-6G Characteristics Figure 7: Relative variation of static dV/dt immunity versus junction temperature (typical values) 12 Figure 8: Surge peak on-state current versus number of cycles dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ] 500 ITSM(A) VD = 402 V 11 10 9 400 Above test equipment capability 8 7 Non repetitive Tj initial = 25 °C 300 6 5 200 4 Repetitive Tc = 120 °C 3 2 100 1 0 Number of cycles 90 95 100 105 110 115 120 125 130 135 140 145 150 0 Tj (°C) 1 10 100 1000 Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms Figure 10: On-state characteristics (maximum values) Figure 11: Relative variation of leakage current versus junction temperature Figure 12: Thermal resistance junction to ambient versus copper surface under tab IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V] 1.0E+00 VDRM = VRRM = 600 V 80 Rth(j-a) (°C/W) 70 1.0E-01 60 50 1.0E-02 40 1.0E-03 30 20 Epoxy printed board FR4, eCU= 35 µm 1.0E-04 10 SCu(cm²) 0 1.0E-05 25 50 75 Tj (°C) 100 125 150 DocID030697 Rev 1 0 5 10 15 20 25 30 35 5/9 40 Package information 2 TN5015H-6G Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL94, V0 Lead-free, halogen-free package D²PAK package information Figure 13: D²PAK package outline 6/9 DocID030697 Rev 1 TN5015H-6G Package information Table 6: D²PAK package mechanical data Dimensions Ref. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.0098 0.25 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.27 1.40 0.0500 0.0551 L3 1.40 1.75 0.0551 R V2 0.1 0.40 0° 0.0689 0.0157 8° 0° 8° Notes: (1)Dimensions in inches are given for reference only Figure 14: D²PAK recommended footprint (dimensions are in mm) DocID030697 Rev 1 7/9 Ordering information 3 TN5015H-6G Ordering information Figure 15: Ordering information scheme TN 50 15 H - 6 G - TR Series TN = SCR Current 50 = 50 A Gate sensitivity 15 = 15 m A High temperature H = 150 °C Voltage 6 = 600 V Package G = D ² PA K Packing mode Blank = tube TR = Tape and reel Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode TN5015H-6G TN5015H6 D²PAK 1.5 g 50 Tube TN5015H-6G-TR TN5015H6 D²PAK 1.5 g 1000 Tape and reel Revision history Table 8: Document revision history 8/9 Date Revision 08-Jun-2017 1 DocID030697 Rev 1 Changes Initial release. TN5015H-6G IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030697 Rev 1 9/9